IRLL024ZPBF Datasheet IRLL024ZTRPBF, IRLL024ZPBF | P1-P3

IRLL024ZPbF

HEXFET

®

Power MOSFET

V

DSS

= 55V

R

DS(on)

= 60mΩ

I

D

= 5.0A

09/27/10

www.irf.com 1

SOT-223

This HEXFET

®

Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 150°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These features

combine to make this design an extremely efficient

and reliable device for use in a wide variety of

applications.

S

D

G

Description

l Advanced Process Technology

l Ultra Low On-Resistance

l 150°C Operating Temperature

l Fast Switching

l Repetitive Avalanche Allowed up to Tjmax

l Lead-Free

Features

Absolute Maximum Ratings

Parameter Units

I

D

@ T

A

= 25°C

Continuous Drain Current, V

GS

@ 10V

(Silicon Limited)

I

D

@ T

A

= 70°C

Continuous Drain Current, V

GS

@ 10V

A

I

DM

Pulsed Drain Current

P

D

@T

A

= 25°C

Power Dissipation

P

D

@T

A

= 25°C Power Dissipation W

Linear Deratin

g

Factor W/°C

V

GS

Gate-to-Source Voltage V

E

AS (Thermally limited)

Single Pulse Avalanche Energy mJ

E

AS

(Tested )

Single Pulse Avalanche Energy Tested Value

I

AR

Avalanche Current A

E

AR

Repetitive Avalanche Energy mJ

T

J

Operating Junction and

T

STG

Storage Temperature Range °C

Thermal Resistance

Parameter T

y

p. Max. Units

R

θJA

Junction-to-Ambient (PCB mount, steady state) ––– 45

°C/W

R

θJA

Junction-to-Ambient (PCB mount, steady state) ––– 120

-55 to + 150

1.0

0.02

± 16

Max.

5.0

4.0

40

2.8

38

21

See Fig.12a, 12b, 15, 16

PD - 95990A

IRLL024ZPbF

2 www.irf.com

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by T

Jmax

, starting T

J

= 25°C, L = 4.8mH

R

G

= 25Ω, I

AS

= 3.0A, V

GS

=10V.

Part not recommended for use above this value.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

 C

oss

eff. is a fixed capacitance that gives the same

charging time as C

oss

while V

DS

is rising from 0 to 80% V

DSS

.

Limited by T

Jmax

, see Fig.12a, 12b, 15, 16 for typical

repetitive avalanche performance.

This value determined from sample failure population.

100% tested to this value in production.

When mounted on 1 inch square copper board.

When mounted on FR-4 board using minimum

recommended footprint.

S

D

G

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameter Min. T

y

p. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage 55 ––– ––– V

∆V

(BR)DSS

/

∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C

––– 48 60

R

DS(on)

Static Drain-to-Source On-Resistance ––– ––– 80

m

Ω

––– ––– 100

V

GS(th)

Gate Threshold Voltage 1.0 ––– 3.0 V

gfs Forward Transconductance 7.5 ––– ––– S

I

DSS

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

I

GSS

Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leakage ––– ––– -200

Q

g

Total Gate Charge ––– 7.0 11

Q

gs

Gate-to-Source Charge ––– 1.5 ––– nC

Q

gd

Gate-to-Drain ("Miller") Charge ––– 4.0 –––

t

d(on)

Turn-On Delay Time ––– 8.6 –––

t

r

Rise Time ––– 33 ––– ns

t

d(off)

Turn-Off Delay Time ––– 20 –––

t

f

Fall Time ––– 15 –––

C

iss

Input Capacitance ––– 380 –––

C

oss

Output Capacitance ––– 66 –––

C

rss

Reverse Transfer Capacitance ––– 36 ––– pF

C

oss

Output Capacitance ––– 220 –––

C

oss

Output Capacitance ––– 53 –––

C

oss

eff.

Effective Output Capacitance ––– 93 –––

Source-Drain Ratin

g

s and Characteristics

Parameter Min. T

y

p. Max. Units

I

S

Continuous Source Current ––– ––– 5.0

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 40

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.3 V

t

rr

Reverse Recovery Time ––– 15 23 ns

Q

rr

Reverse Recovery Charge ––– 9.1 14 nC

t

on

Forward Turn-On Time

Intrinsic turn-on time is ne

g

li

g

ible (turn-on is dominated by LS+LD)

V

DS

= 25V

ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 0V to 44V

T

J

= 25°C, I

F

= 3.0A, V

DD

= 28V

di/dt = 100A/µs

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 3.0A

V

DS

= V

GS

, I

D

= 250µA

V

DS

= 55V, V

GS

= 0V

V

DS

= 55V, V

GS

= 0V, T

J

= 125°C

MOSFET symbol

V

DD

= 28V

I

D

= 3.0A

R

G

= 56 Ω

T

J

= 25°C, I

S

= 3.0A, V

GS

= 0V

showing the

integral reverse

p-n junction diode.

Conditions

V

GS

= 5.0V

V

GS

= 0V

V

GS

= 5.0V, I

D

= 3.0A

V

GS

= 4.5V, I

D

= 3.0A

V

GS

= 0V, V

DS

= 1.0V, ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 44V, ƒ = 1.0MHz

V

DS

= 25V, I

D

= 3.0A

I

D

= 3.0A

V

DS

= 44V

V

GS

= 16V

V

GS

= -16V

V

GS

= 5.0V

IRLL024ZPbF

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

vs. Drain Current

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 10V

9.0V

7.0V

5.0V

4.5V

4.0V

3.5V

BOTTOM 3.0V

≤

60µs PULSE WIDTH

Tj = 25°C

3.0V

0 2 4 6 8 10

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 150°C

V

DS

= 10V

≤

60µs PULSE WIDTH

024681012

I

D

,Drain-to-Source Current (A)

0

2

4

6

8

10

G

f

s

,

F

o

r

w

a

r

d

T

r

a

n

s

c

o

n

d

u

c

t

a

n

c

e

(

S

)

T

J

= 25°C

T

J

= 150°C

V

DS

= 10V

300µs PULSE WIDTH

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

3.0V

≤

60µs PULSE WIDTH

Tj = 150°C

VGS

TOP 10V

9.0V

7.0V

5.0V

4.5V

4.0V

3.5V

BOTTOM 3.0V

IRLL024ZPBF

IRLL024ZPBF

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