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APT13GP120KG

P1-P3P4-P6
050-7415 Rev B 2-2004
TO-220
G
C
E
APT13GP120K
1200V
A new generation of high voltage power IGBTs. Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for very
fast switching, making it ideal for high frequency, high voltage switch-mode
power supplies and tail current sensitive applications. In many cases, the
POWER MOS 7
®
IGBT provides a lower cost alternative to a Power MOSFET.
• Low Conduction Loss • 100 kHz operation @ 600V, 10A
• Low Gate Charge • 50 kHz operation @ 600V, 16A
• Ultrafast Tail Current shutoff • RBSOA Rated
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN TYP MAX
1200
3 4.5 6
3.3 3.9
3.0
250
2500
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250µA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 13A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 13A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
µA
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
APT13GP120K
1200
±20
±30
41
20
50
50A @ 960V
250
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 150°C
Reverse Bias Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
POWER MOS 7
®
IGBT
G
C
E
050-7415 Rev B 2-2004
APT13GP120K
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
RBSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 13A
T
J
= 150°C, R
G
= 5Ω, V
GE
=
15V, L = 100µH,V
CE
= 960V
Inductive Switching (25°C)
V
CC
= 600V
V
GE
= 15V
I
C
= 13A
R
G
= 5Ω
T
J
= +25°C
Inductive Switching (125°C)
V
CC
= 600V
V
GE
= 15V
I
C
= 13A
R
G
= 5Ω
T
J
= +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Reverse Bias Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
MIN TYP MAX
1145
90
15
7.5
55
8
26
50
9
12
28
34
114
330
165
9
12
70
200
223
710
840
UNIT
pF
V
nC
A
ns
µJ
ns
µJ
UNIT
°C/W
gm
MIN TYP MAX
.50
N/A
1.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
ΘJC
R
ΘJC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7415 Rev B 2-2004
TYPICAL PERFORMANCE CURVES
APT13GP120K
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
T
C
= 125°C
T
C
= 25°C
V
GE
= 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
T
J
= 25°C
T
J
= -55°C
T
J
= 125°C
250µs PULSE TEST
<0.5 % DUTY CYCLE
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V) V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V) FIGURE 2, Output Characteristics (V
GE
= 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V) T
J
, JUNCTION TRMPERATURE (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C) T
C
, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V) I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A) V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V) V
GE
, GATE-TO-EMITTER VOLTAGE (V) I
C
, COLLECTOR CURRENT (A)
0123456 0123456
0 1 2 3 4 5 6 7 8 9 0 10 20 30 40 50 60
6 8 10 12 14 16 -55 -25 0 25 50 75 100 125
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150
40
35
30
25
20
15
10
5
0
16
14
12
10
8
6
4
2
0
5
4
3
2
1
0
60
50
40
30
20
10
0
40
35
30
25
20
15
10
5
0
40
35
30
25
20
15
10
5
0
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
I
C
= 13A
T
J
= 25°C
T
C
= 25°C
T
C
= -55°C
T
C
= 125°C
T
C
= -55°C
V
CE
= 960V
V
CE
= 240V
V
CE
= 600V
I
C
= 6.5A
I
C
= 13A
I
C
=
26A
I
C
= 6.5A
I
C
= 13A
I
C
=
26A
P1-P3P4-P6

APT13GP120KG

Mfr. #:
Buy APT13GP120KG
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
Lifecycle:
New from this manufacturer.
Delivery:
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