APT13GP120KG

050-7415 Rev B 2-2004
APT13GP120K
T
J
= 125°C, V
GE
= 10V
or 15V
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
T
J
= 25°C, V
GE
= 10V
or 15V
T
J
= 125°C, V
GE
= 10V
or 15V
E
on2,
26A
E
off,
26A
E
on2,
13A
E
off,
13A
E
on2,
6.5A
E
off,
6.5A
E
on2,
26A
E
off,
26A
E
on2,
13A
E
off,
13A
E
on2,
6.5A
E
off,
6.5A
T
J
= 125°C,V
GE
=15V
T
J
= 25°C, V
GE
= 10V
or 15V
T
J
= 25°C,V
GE
=15V
T
J
= 25 or 125°C,V
GE
= 15V
V
CE
= 600V
R
G
= 5
L = 100 µH
SWITCHING ENERGY LOSSES (µJ) E
ON2
, TURN ON ENERGY LOSS (µJ) t
r,
RISE TIME (ns) t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) E
OFF
, TURN OFF ENERGY LOSS (µJ) t
f,
FALL TIME (ns) t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS) T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
5 10 15 20 25 30 5 10 15 20 25 30
5 10 15 20 25 30 5 10 15 20 25 30
5 10 15 20 25 30 5 10 15 20 25 30
0 10 20 30 40 50 25 50 75 100 125
V
CE
= 600V
V
GE
= +15V
R
G
= 5
V
CE
= 600V
V
GE
= +15V
T
J
= 125°C
V
CE
= 600V
V
GE
= +15V
R
G
= 5
V
CE
= 600V
V
GE
= +15V
R
G
= 5
R
G
= 5, L = 100µH, V
CE
= 600V
R
G
= 5, L = 100µH, V
CE
= 600V
V
CE
= 600V
T
J
= 25°C, T
J
=125°C
R
G
= 5
L = 100 µH
14
12
10
8
6
4
2
0
30
25
20
15
10
5
0
1400
1200
1000
800
600
400
200
0
1800
1600
1400
1200
1000
800
600
400
200
0
120
100
80
60
40
20
0
300
250
200
150
100
50
0
1600
1400
1200
1000
800
600
400
200
0
1600
1400
1200
1000
800
600
400
200
0
V
GE
= 15V
050-7415 Rev B 2-2004
TYPICAL PERFORMANCE CURVES
APT13GP120K
max max1 max 2
max1
d(on ) r d (off ) f
diss cond
max 2
on2 off
JC
diss
JC
Fmin(f,f)
0.05
f
ttt t
PP
f
EE
TT
P
R
θ
=
=
++ +
=
+
=
510 15202530
60
50
40
30
20
10
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
F
MAX
, OPERATING FREQUENCY (kHz)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18, Minimim Switching Safe Operating Area
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
C
res
C
ies
C
oes
T
J
= 125°C
T
C
= 75°C
D = 50 %
V
CE
= 600V
R
G
= 5
3,000
1,000
500
100
10
1
0 10 20 30 40 50 0 200 400 600 800 1000
181
100
50
10
0.216
0.284
0.600F
0.161F
Power
(Watts)
Junction
temp. ( C)
Case temperature
RC MODEL
0.60
0.50
0.40
0.30
0.20
0.10
0
Note:
Duty Factor D =
t
1
/
t
2
Peak T
J
= P
DM
x Z
θJC
+ T
C
t
1
t
2
P
DM
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
050-7415 Rev B 2-2004
APT13GP120K
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T.
DRIVER*
V
CE
Figure 24, E
ON1
Test Circuit
Emitter
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.38 (.015)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
1.39 (.055)
0.51 (.020)
4.08 (.161) Dia.
3.54 (.139)
Dimensions in Millimeters and (Inches)
16.51 (.650)
14.23 (.560)
6.35 (.250)
MAX.
Gate
Collector
6.85 (.270)
5.85 (.230)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.92 (.115)
2.04 (.080)
3.42 (.135)
2.54 (.100)
0.50 (.020)
0.41 (.016)
5.33 (.210)
4.83 (.190)
Collector
TO-220AC Package Outline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
I
C
A
D.U.T.
APT15DF120
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
90%
10%
t
r
5%
5%
T
J
= 125°C
Drain Current
DrainVoltage
Gate Voltage
10%
t
d(on)
Switching Energy
90%
90%
t
d(off)
0
10%
t
f
T
J
= 125°C
DrainVoltage
Drain Current
Gate Voltage
Switching Energy

APT13GP120KG

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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