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BUB323ZT4

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 2
1 Publication Order Number:
BUB323Z/D
BUB323Z
NPN Silicon Power
Darlington
High Voltage Autoprotected
D
2
PAK for Surface Mount
The BUB323Z is a planar, monolithic, high−voltage power
Darlington with a built−in active zener clamping circuit. This device is
specifically designed for unclamped, inductive applications such as
Electronic Ignition, Switching Regulators and Motor Control.
Features
• Integrated High−Voltage Active Clamp
• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed
Over the −40°C to +125°C Temperature Range
• Clamping Energy Capability 100% Tested in a Live
Ignition Circuit
• High DC Current Gain/Low Saturation Voltages
Specified Over Full Temperature Range
• Design Guarantees Operation in SOA at All Times
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Sustaining Voltage V
CEO
350 Vdc
Collector−Emitter Voltage V
EBO
6.0 Vdc
Collector Current − Continuous
− Peak
I
C
I
CM
10
20
Adc
Base Current − Continuous
− Peak
I
B
I
BM
3.0
6.0
Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
150
1.0
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to
+175
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.0
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5
_C/W
Maximum Lead Temperature
for Soldering Purposes,
1/8 in from Case for 5 Seconds
T
L
260
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
BUB323Z = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
http://onsemi.com
AUTOPROTECTED
DARLINGTON
10 AMPERES
360−450 VOLTS CLAMP
150 WATTS
360 V
CLAMP
MARKING
DIAGRAM
BUB323ZG
AYWW
D
2
PAK
CASE 418B
STYLE 1
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
BUB323Z
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (Note 1)
Collector−Emitter Clamping Voltage (I
C
= 7.0 A)
(T
C
= −40°C to +125°C)
V
CLAMP
350 − 450 Vdc
Collector−Emitter Cutoff Current
(V
CE
= 200 V, I
B
= 0)
I
CEO
− − 100
mAdc
Emitter−Base Leakage Current
(V
EB
= 6.0 Vdc, I
C
= 0)
I
EBO
− − 50 mAdc
ON CHARACTERISTICS (Note 1)
Base−Emitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 100 mAdc)
(I
C
= 10 Adc, I
B
= 0.25 Adc)
V
BE(sat)
−
−
−
−
2.2
2.5
Vdc
Collector−Emitter Saturation Voltage
(I
C
= 7.0 Adc, I
B
= 70 mAdc)
(T
C
= 125°C)
(I
C
= 8.0 Adc, I
B
= 0.1 Adc)
(T
C
= 125°C)
(I
C
= 10 Adc, I
B
= 0.25 Adc)
V
CE(sat)
−
−
−
−
−
−
−
−
−
−
1.6
1.8
1.8
2.1
1.7
Vdc
Base−Emitter On Voltage
(I
C
= 5.0 Adc, V
CE
= 2.0 Vdc) (T
C
= −40°C to +125°C)
(I
C
= 8.0 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
1.1
1.3
−
−
2.1
2.3
Vdc
Diode Forward Voltage Drop
(I
F
= 10 Adc)
V
F
− − 2.5 Vdc
DC Current Gain
(I
C
= 6.5 Adc, V
CE
= 1.5 Vdc) (T
C
= −40°C to +125°C)
(I
C
= 5.0 Adc, V
CE
= 4.6 Vdc)
h
FE
150
500
−
−
−
3400
−
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(I
C
= 0.2 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
f
T
− − 2.0 MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
− − 200 pF
Input Capacitance
(V
EB
= 6.0 V)
C
ib
− − 550 pF
CLAMPING ENERGY (See Notes)
Repetitive Non−Destructive Energy Dissipated at turn−off:
(I
C
= 7.0 A, L = 8.0 mH, R
BE
= 100 W) (see Figures 2 and 4)
W
CLAMP
200 − − mJ
SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)
Fall Time
(I
C
= 6.5 A, I
B1
= 45 mA,
V
BE(off)
= 0, R
BE(off)
= 0,
V
CC
= 14 V, V
Z
= 300 V)
t
fi
− 625 − ns
Storage Time t
si
− 10 30
ms
Cross−over Time t
c
− 1.7 −
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
BUB323Z
http://onsemi.com
3
Figure 1. I
C
= f(V
CE
) Curve Shape
I
C
I
NOM
= 6.5 A
Output transistor turns on: I
C
= 40 mA
High Voltage Circuit turns on: I
C
= 20 mA
Avalanche diode turns on: I
C
= 100 mA
Icer Leakage Current
250 V 300 V 340 V
V
CE
V
CLAMP
NOMINAL
= 400 V
By design, the BU323Z has a built−in avalanche diode and
a special high voltage driving circuit. During an
auto−protect cycle, the transistor is turned on again as soon
as a voltage, determined by the zener threshold and the
network, is reached. This prevents the transistor from going
into a Reverse Bias Operating limit condition. Therefore, the
device will have an extended safe operating area and will
always appear to be in “FBSOA.” Because of the built−in
zener and associated network, the I
C
= f(V
CE
) curve exhibits
an unfamiliar shape compared to standard products as
shown in Figure 1.
Figure 2. Basic Energy Test Circuit
MERCURY CONTACTS
WETTED RELAY
V
CE
MONITOR
(V
GATE
)
L INDUCTANCE
(8 mH)
I
B
CURRENT
SOURCE
V
BEoff
I
B2
SOURCE
I
C
CURRENT
SOURCE
0.1 W
NON
INDUCTIVE
I
C
MONITOR
R
BE
= 100 W
The bias parameters, V
CLAMP
, I
B1
, V
BE(off)
, I
B2
, I
C
, and
the inductance, are applied according to the Device Under
Test (DUT) specifications. V
CE
and I
C
are monitored by the
test system while making sure the load line remains within
the limits as described in Figure 4.
Note: All BU323Z ignition devices are 100% energy
tested, per the test circuit and criteria described in Figures 2
and 4, to the minimum guaranteed repetitive energy, as
specified in the device parameter section. The device can
sustain this energy on a repetitive basis without degrading
any of the specified electrical characteristics of the devices.
The units under test are kept functional during the complete
test sequence for the test conditions described:
I
C(peak)
= 7.0 A, I
C
H = 5.0 A, I
C
L = 100 mA, I
B
= 100 mA,
R
BE
= 100 W, V
gate
= 280 V, L = 8.0 mH
Figure 3. Forward Bias Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000340V10010
0.001
0.01
0.1
1
10
T
C
= 25°C
250ms
10ms
1ms
300ms
I
C
, COLLECTOR CURRENT (AMPS)
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED V
CEO
P1-P3P4-P6P7-P8

BUB323ZT4

Mfr. #:
Buy BUB323ZT4
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 10A 350V Bipolar
Lifecycle:
New from this manufacturer.
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