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BUB323ZT4

P1-P3P4-P6P7-P8
BUB323Z
http://onsemi.com
4
Figure 4. Energy Test Criteria for BU323Z
The shaded area represents the amount of energy the de-
vice can sustain, under given DC biases (I
C
/I
B
/V
BE(off)
/
R
BE
), without an external clamp; see the test schematic dia-
gram, Figure 2.
The transistor PASSES the Energy test if, for the inductive
load and I
CPEAK
/I
B
/V
BE(off)
biases, the V
CE
remains outside
the shaded area and greater than the V
GATE
minimum limit,
Figure 4a.
The transistor FAILS if the V
CE
is less than the V
GATE
(minimum limit) at any point along the V
CE
/I
C
curve as
shown on Figures 4b, and 4c. This assures that hot spots and
uncontrolled avalanche are not being generated in the die,
and the transistor is not damaged, thus enabling the sustained
energy level required.
The transistor FAILS if its Collector/Emitter breakdown
voltage is less than the V
GATE
value, Figure 4d.
I
CPEAK
(a)
I
C
I
C
HIGH
I
C
LOW
V
CE
V
GATE
MIN
I
CPEAK
I
C
I
C
HIGH
I
C
LOW
V
CE
V
GATE
MIN
(b)
I
CPEAK
I
C
I
C
HIGH
I
C
LOW
V
CE
V
GATE
MIN
(c)
I
CPEAK
I
C
I
C
HIGH
I
C
LOW
V
CE
V
GATE
MIN
(d)
BUB323Z
http://onsemi.com
5
Figure 5. DC Current Gain
I
C
, COLLECTOR CURRENT (MILLIAMPS)
100001000100
10
100
1000
10000
T
J
= 125°C
25°C
h
FE
, DC CURRENT GAIN
-40°C
V
CE
= 1.5 V
Figure 6. DC Current Gain
I
C
, COLLECTOR CURRENT (MILLIAMPS)
1000001000100
10
100
1000
10000
TYPICAL
h
FE
, DC CURRENT GAIN
V
CE
= 5 V, T
J
= 25°C
10000
TYP + 6Σ
TYP - 6Σ
Figure 7. Collector Saturation Region
I
B
, BASE CURRENT (MILLIAMPS)
100101
0
2.5
4.0
5.0
T
J
= 25°C
I
C
= 3 A
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
4.5
2.0
3.5
3.0
1.0
0.5
1.5
5 A
7 A
8 A
10 A
Figure 8. Collector−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (AMPS)
1010.1
0.4
1.4
2.0
2.4
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.2
1.2
1.8
1.6
0.8
0.6
1.0
T
J
= 125°C
25°C
I
C
/I
B
= 150
Figure 9. Base−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (AMPS)
1010.1
0.8
1.8
2.0
1.4
1.6
1.2
1.0
Figure 10. Base−Emitter “ON” Voltages
I
C
, COLLECTOR CURRENT (AMPS)
1010.1
0.6
1.4
1.8
2.0
1.2
1.6
0.8
1.0
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
I
C
/I
B
= 150
T
J
= 25°C
125°C
V
BE(on)
, BASE-EMITTER VOLTAGE (VOLTS)
V
CE
= 2 VOLTS
T
J
= 25°C
125°C
BUB323Z
http://onsemi.com
6
ORDERING INFORMATION
Device Package Shipping
†
BUB323ZG D
2
PAK
(Pb−Free)
50 Units / Rail
BUB323ZT4G D
2
PAK
(Pb−Free)
800 Units / Tape & Reel
NJVBUB323ZT4G* D
2
PAK
(Pb−Free)
800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
P1-P3P4-P6P7-P8

BUB323ZT4

Mfr. #:
Buy BUB323ZT4
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 10A 350V Bipolar
Lifecycle:
New from this manufacturer.
Delivery:
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