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IRF9Z34SPBF

P1-P3P4-P6P7-P9
IRF9Z34S, SiHF9Z34S
www.vishay.com
Vishay Siliconix
S16-0754-Rev. E, 02-May-16
1
Document Number: 91093
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Advanced process technology
• Surface mount (IRF9Z34S, SiHF9Z34S)
• 175 °C operating temperature
• Fast switching
•P-channel
• Fully avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 1.3 mH, R
g
= 25 , I
AS
= - 18 A (see fig. 12).
c. I
SD
- 18 A, dI/dt 170 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z34, SiHF9Z34 data and test conditions.
PRODUCT SUMMARY
V
DS
(V) -60
R
DS(on)
()V
GS
= -10 V 0.14
Q
g
max. (nC) 34
Q
gs
(nC) 9.9
Q
gd
(nC) 16
Configuration Single
S
G
D
P-Channel MOSFET
D
2
PAK (TO-263)
G
D
S
Available
Available
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263) D
2
PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9Z34S-GE3 SiHF9Z34STRL-GE3
a
SiHF9Z34STRR-GE3
a
Lead (Pb)-free IRF9Z34SPbF IRF9Z34STRLPbF
a
IRF9Z34STRRPbF
a
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at -10 V
T
C
= 25 °C
I
D
-18
AT
C
= 100 °C -13
Pulsed Drain Current
a, e
I
DM
-72
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energy
b, e
E
AS
370 mJ
Avalanche Current
a
I
AR
-18 A
Repetitive Avalanche Energy
a
E
AR
8.8 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
88
W
T
A
= 25 °C 3.7
Peak Diode Recovery dV/dt
c, e
dV/dt -4.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175
°C
Soldering Recommendations (Peak temperature)
d
for 10 s 300
IRF9Z34S, SiHF9Z34S
www.vishay.com
Vishay Siliconix
S16-0754-Rev. E, 02-May-16
2
Document Number: 91093
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
c. Pulse width 300 μs; duty cycle 2 %.
d. Uses IRF9Z34, SiHF9Z34 data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient (PCB
mounted, steady-state)
a
R
thJA
-40
°C/W
Maximum Junction-to-Case (Drain) R
thJC
-1.7
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -60 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= -1 mA
c
--0.06-V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -2.0 - -4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= -60 V, V
GS
= 0 V - - -100
μA
V
DS
= -48 V, V
GS
= 0 V, T
J
= 150 °C - - -500
Drain-Source On-State Resistance R
DS(on)
V
GS
= -10 V I
D
= -11 A
b
- - 0.14
Forward Transconductance g
fs
V
DS
= -25 V, I
D
= -11 A
c
5.9 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= -25 V,
f = 1.0 MHz, see fig. 5
c
- 1100 -
pFOutput Capacitance C
oss
- 620 -
Reverse Transfer Capacitance C
rss
- 100 -
Total Gate Charge Q
g
V
GS
= -10 V
I
D
= -18 A, V
DS
= -48 V,
see fig. 6 and 13
b, c
--34
nC Gate-Source Charge Q
gs
--9.9
Gate-Drain Charge Q
gd
--16
Turn-On Delay Time t
d(on)
V
DD
= -30 V, I
D
= -18 A,
R
g
= 12 , R
D
= 1.5 , see fig. 10
b, c
-18-
ns
Rise Time t
r
- 120 -
Turn-Off Delay Time t
d(off)
-20-
Fall Time t
f
-58-
Gate Input Resistance R
g
f = 1 MHz, open drain 0.7 - 3.9
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p -n junction diode
---18
A
Pulsed Diode Forward Current
a
I
SM
---72
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= -18 A, V
GS
= 0 V
b
---6.3V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= -18 A, dI/dt = 100 A/μs
b, c
- 100 200 ns
Body Diode Reverse Recovery Charge Q
rr
- 280 520 nC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G
IRF9Z34S, SiHF9Z34S
www.vishay.com
Vishay Siliconix
S16-0754-Rev. E, 02-May-16
3
Document Number: 91093
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91093_01
20 µs Pulse Width
T
C
= 25 °C
- 4.5 V
- V
DS
, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
10
0
10
1
10
2
10
1
10
0
Bottom
To p
V
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
10
-1
10
-1
10
0
10
1
- V
DS
,
Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
Bottom
To p
V
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
20 µs Pulse Width
T
C
= 175 °C
91093_02
- 4.5 V
10
2
10
1
10
0
20 µs Pulse Width
V
DS
= - 25 V
10
1
10
0
- I
D
, Drain Current (A)
- V
GS
,
Gate-to-Source Voltage (V)
5678910
4
25 °C
175 °C
91093_03
I
D
= - 18 A
V
GS
= - 10 V
2.5
0.0
0.5
1.0
1.5
2.0
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91093_04
- 60 - 40 - 20 0 20 40
60 80 100
120 140 160
180
2000
1600
1200
800
0
400
10
0
10
1
Capacitance (pF)
- V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91093_05
Q
G
, Total Gate Charge (nC)
- V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
5
25
2015
10
For test circuit
see figure 13
91093_06
I
D
= - 18 A
V
DS
= - 30 V
V
DS
= - 48 V
35
30
P1-P3P4-P6P7-P9

IRF9Z34SPBF

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Buy IRF9Z34SPBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-Chan 60V 18 Amp
Lifecycle:
New from this manufacturer.
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