IRF9Z34SPBF Datasheet IRF9Z34SPBF, IRF9Z34STRRPBF, IRF9Z34STRLPBF | P4-P6

IRF9Z34S, SiHF9Z34S

www.vishay.com

Vishay Siliconix

S16-0754-Rev. E, 02-May-16

4

Document Number: 91093

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

10

1

10

0

- V

SD

, Source-to-Drain Voltage (V)

- I

SD

, Reverse Drain Current (A)

0.0

4.0

3.02.01.0

25 °C

175 °C

V

GS

= 0 V

91093_07

5.0

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

- V

DS

, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

T

C

= 25 °C

T

J

= 175 °C

Single Pulse

10

2

0.1

2

5

1

2

5

10

2

5

25

1

25

10

25

10

2

25

10

3

91093_08

10

3

- I

D

, Drain Current (A)

T

C

, Case Temperature (°C)

0

4

8

12

16

20

91093_09

15025 1251007550

175

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

R

D

V

GS

R

g

D.U.T.

- 10 V

+

-

V

DS

V

DD

V

GS

10 %

90 %

V

DS

t

d(on)

t

r

t

d(off)

t

f

10

1

0.1

10

-2

10

-5

10

-4

10

-3

10

-2

0.1 1 10

P

DM

t

1

t

2

t

1

, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

Notes:

1. Duty Factor, D = t

1

/t

2

2. Peak T

j

= P

DM

x Z

thJC

+ T

C

Single Pulse

(Thermal Response)

D = 0.5

0.2

0.05

0.02

0.01

91093_11

0.1

IRF9Z34S, SiHF9Z34S

www.vishay.com

Vishay Siliconix

S16-0754-Rev. E, 02-May-16

5

Document Number: 91093

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13 - Maximum Avalanche Energy vs. Drain Current Fig. 13b - Gate Charge Test Circuit

R

g

I

AS

0.01 Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

- 10 V

Vary t

p

to obtain

required I

AS

I

AS

V

DS

V

DD

V

DS

t

p

1200

0

200

400

600

800

1000

Starting T

J

, Junction Temperature (°C)

E

AS

, Single Pulse Energy (mJ)

Bottom

To p

I

D

- 7.3 A

- 13 A

- 18 A

V

DD

= - 25 V

91093_12c

25 150

125

10075

50

175

Q

GS

Q

GD

Q

G

V

G

Charge

- 10 V

D.U.T.

- 3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

IRF9Z34S, SiHF9Z34S

www.vishay.com

Vishay Siliconix

S16-0754-Rev. E, 02-May-16

6

Document Number: 91093

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 14 - For P-Channel



Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data see www.vishay.com/ppg?91093

.

P.W.

Period

dI/dt

Diode recovery

dV/dt

Body diode forward drop

Body diode forward

current

Driver gate drive

Inductor current

D =

P.W.

Period

+

-

+

Peak Diode Recovery dV/dt Test Circuit

• dV/dt controlled by R

g

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

• Compliment N-Channel of D.U.T. for driver

V

DD

• I

SD

controlled by duty factor “D”

Note

a. V

GS

= - 5 V for logic level and - 3 V drive devices

V

GS

= - 10 V

a

D.U.T. l

SD

waveform

D.U.T. V

DS

waveform

V

DD

Re-applied

voltage

Ripple ≤ 5 %

I

SD

Reverse

recovery

current

IRF9Z34SPBF

IRF9Z34SPBF

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