BT151-500R_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 2 March 2009 3 of 11
NXP Semiconductors
BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
-500V
V
RRM
repetitive peak reverse
voltage
-500V
I
T(AV)
average on-state
current
half sine wave; T
mb
≤ 109 °C; see Figure 3 -7.5A
I
T(RMS)
RMS on-state current half sine wave; T
mb
≤ 109 °C; see Figure 1; see
Figure 2
-12A
dI
T
/dt rate of rise of on-state
current
I
T
=20A; I
G
=50mA; dI
G
/dt = 50 mA/µs - 50 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
I
TSM
non-repetitive peak
on-state current
half sine wave; t
p
= 8.3 ms; T
j(init)
=25°C - 132 A
half sine wave; t
p
= 10 ms; T
j(init)
=25°C; see
Figure 4; see Figure 5
-120A
I
2
t I2t for fusing t
p
= 10 ms; sine-wave pulse - 72 A
2
s
P
G(AV)
average gate power over any 20 ms period - 0.5 W
V
RGM
peak reverse gate
voltage
-5V
Fig 1. RMS on-state current as a function of surge
duration; maximum values
Fig 2. RMS on-state current as a function of mounting
base temperature; maximum values
surge duration (s)
10
−2
10110
−1
001aaa954
10
15
5
20
25
I
T(RMS)
(A)
0
T
mb
(°C)
−50 150100050
001aaa999
8
4
12
16
I
T(RMS)
(A)
0
