BT151-500R_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 2 March 2009 6 of 11
NXP Semiconductors
BT151-500R
SCR, 12 A, 15mA, 500 V, SOT78
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
=12V; T
j
=25°C; I
T
= 100 mA; see
Figure 8
-215mA
I
L
latching current V
D
=12V; T
j
=25°C; see Figure 9 -1040mA
I
H
holding current V
D
=12V; T
j
=25°C; see Figure 10 -720mA
V
T
on-state voltage I
T
=23A; T
j
= 25 °C; see Figure 11 - 1.4 1.75 V
V
GT
gate trigger voltage I
T
= 100 mA; V
D
=12V; T
j
= 25 °C; see
Figure 12
-0.61.5V
I
T
= 100 mA; V
D
=500V; T
j
= 125 °C 0.25 0.4 - V
I
D
off-state current V
D
=500V; T
j
= 125 °C - 0.1 0.5 mA
I
R
reverse current V
R
=500V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
=335V; T
j
= 125 °C; exponential
waveform; gate open circuit
50 130 - V/µs
V
DM
=335V; T
j
=125°C; R
GK
= 100 Ω;
exponential waveform; see Figure 7
200 1000 - V/µs
t
gt
gate-controlled turn-on
time
I
TM
=40A; V
D
= 500 V; I
G
= 100 mA;
dI
G
/dt = 5 A/µs; T
j
=25°C
-2-µs
t
q
commutated turn-off
time
V
DM
=335V; T
j
=125°C; I
TM
=20A;
V
R
=25V; (dI
T
/dt)
M
=30A/µs;
dV
D
/dt = 50 V/µs; R
GK
= 100 Ω
-70-µs
Fig 7. Critical rate of rise of off-state voltage as a
function of junction temperature; minimum
values
Fig 8. Normalized gate trigger current as a function of
junction temperature
001aaa949
10
3
10
2
10
4
dV
D
/dt
(V/μs)
10
T
j
(°C)
0 15010050
(2)
(1)
T
j
(°C)
−50 150100050
001aaa952
1
2
3
0
I
GT
I
GT(25°C)
