TC850
DS21479D-page 4 2001-2012 Microchip Technology Inc.
C
IN
Input Capacitance 1 pF Pins 1 - 7, 17
C
OUT
Output Capacitance 15 pF Pins 8 -15, High-impedance State
T
CE
Chip-Enable Access Time 230 450 nsec CS or CE, RD = LOW (Note 1)
T
RE
Read-Enable Access Time 190 450 nsec CS = HIGH, CE = LOW, (Note 1)
T
DHC
Data Hold From CS or CE 250 450 nsec RD = LOW, (Note 1)
T
DHR
Data Hold From RD 210 450 nsec CS = HIGH, CE = LOW, (Note 1)
T
OP
OVR/POL Data Access Time 140 300 nsec CS = HIGH, CE = LOW,
RD
= LOW, (Note 1)
T
LH
Low/High Byte Access Time 140 300 nsec CS = HIGH, CE = LOW,
RD = LOW, (Note 1)
Clock Setup Time 100 nsec Positive or Negative Pulse Width
T
WRE
RD Minimum Pulse Width 450 230 nsec CS = HIGH, CE = LOW, (Note 2)
T
WRD
RD Minimum Delay Time 150 50 nsec CS = HIGH, CE = LOW, (Note 2)
T
WWD
WR Minimum Pulse Width 75 25 nsec CS = HIGH, CE = LOW, (Note 1)
TABLE 1-1: TC850 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: V
S
= ±5V; F
CLK
= 61.44kHz, V
FS
= 3.2768V, T
A
= 25°C, Figure 1-1, unless otherwise specified.
Symbol Parameter Min Typ Max Unit Test Conditions
Note 1: Demand mode, CONT/DEMAND
= LOW. Figure 8-2 timing diagram. C
L
= 100 pF.
2: Continuous mode, CONT/DEMAND
= HIGH. Figure 8-4 timing diagram.
3: Digital inputs have CMOS logic levels and internal pull-up/pull-down resistors. For TTL compatibility, external pull-up
resistors to V
DD
are recommended.
2001-2012 Microchip Technology Inc. DS21479D-page 5
TC850
FIGURE 1-1: Standard Test Circuit Configuration
V
DD
V
SS
16
8
9
10
11
12
13
14
15
1
2
3
4
5
6
7
17
TC850
0.01 μF Input
+1.6384V
+0.0256V
100 MΩ
120 MkW
1 μF
*
1 μF
*
0.1
μF
0.1
μF
0.1
μF
0.1
μF
0.1 μF
0.1
μF
BUFFER
OSC
1
OSC
2
INT
IN
INT
OUT
C
INTB
C
BUFA
C
BUFB
C
INTA
R
INT
C
INT
COMP
TEST
NC
18
21
28 2729
26
19
23
24
25
35
34
37
38
36
33
39
30
31
61.44 kHz
20
2240
-5V
+5V
DGND
32
**
**
NOTES: Unless otherwise specified, all 0.1 μF capacitors are film dielectric.
Ceramic capacitors are not recommended.
NC = No Connection
*Polypropylene capacitors.
** 100 pF Mica capacitors.
DB0
DB1
DB2
DB3
DB4
DB5
DB6
DB7
BUSY
CS
CE
WR
RD
CONT/DEMAND
OVR/POL
L/H
IN-
IN+
REF-
ANALOG COMMON
REF
1
+
REF
2
+
C
REF1
+
C
REF1
-
C
REF2
-
C
REF2
+
TC850
DS21479D-page 6 2001-2012 Microchip Technology Inc.
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1: PIN FUNCTION TABLE
Pin Number
(40-Pin
PDIP/CERDIP)
Pin Number
(44-Pin PLCC)
Symbol Description
1 2 CS Chip Select, active HIGH. Logically ANDed, with CE
to enable read and write
inputs (Note 1).
23CE
Chip enable, active LOW (Note 2).
34WR
Write input, active LOW. When chip is selected (CS = HIGH and CE = LOW) and
in Demand mode (CONT/DEMAND
= LOW), a logic LOW on WR starts a
conversion (Note 1).
45RD
Read input, active LOW. When CS = HIGH and CE = LOW, a logic LOW on RD
enables the 3-state data outputs (Note 2).
5 6 CONT/
DEMAND
Conversion control input. When CONT/DEMAND = LOW, conversions are initi-
ated by the WR
input. When CONT/DEMAND = HIGH, conversions are
performed continuously (Note 1).
67OVR/POL
Overrange/polarity data-select input. When making conversions in the Demand
mode (CONT/DEMAND
= LOW), OVR/POL controls the data output on DB7
when the high-order byte is active (Note 2).
78L/H
Low/high byte-select input. When CONT/DEMAND = LOW, this input controls
whether low-byte or high-byte data is enabled on DB0 through DB7 (Note 2).
8 9 DB7 Most Significant data bit output. When reading the A/D conversion result, the
polarity, overrange and DB7 data are output on this pin.
9-15 10-17 DB6-DB0 Data outputs DB6-DB0. 3-state, bus compatible.
16 18 BUSY A/D conversion status output. BUSY goes to a logic HIGH at the beginning of the
de-integrate phase, then goes LOW when conversion is complete. The falling
edge of BUSY can be used to generate a
P interrupt.
17 19 OSC
1
Crystal oscillator connection or external oscillator input.
18 20 OSC
2
Crystal oscillator connection.
19 21 TEST For factory testing purposes only. Do not make external connection to this pin.
20 22 DGND Digital ground connection.
21 24 COMP Connection for comparator auto-zero capacitor. Bypass to V
SS
with 0.1 F.
22 25 V
SS
Negative power supply connection, typically -5V.
23 26 INT
OUT
Output of the integrator amplifier. Connect to C
INT
.
24 27 INT
IN
Input to the integrator amplifier. Connect to summing node of R
INT
and C
INT
.
25 28 BUFFER Output of the input buffer. Connect to R
INT
.
26 29 C
BUFB
Connection for buffer auto-zero capacitor. Bypass to V
SS
with 0.1 F.
27 30 C
BUFA
Connection to buffer auto-zero capacitor. Bypass to V
SS
with 0.1 F.
28 31 C
INTA
Connection for integrator auto-zero capacitor. Bypass to V
SS
with 0.1 F.
29 32 C
INTB
Connection for integrator auto-zero capacitor. Bypass to V
SS
with 0.1 F.
30 33 ANALOG
COMMON
Analog common.
31 35 IN– Negative differential analog input.
32 36 IN+ Positive differential analog input.
Note 1: This pin incorporates a pull-down resistor to DGND.
2: This pin incorporates a pull-up resistor to V
DD
.
3: Pins 1, 23 and 34 (44-PLCC) package are NC “No Internal connection”.

TC850CLW713

Mfr. #:
Manufacturer:
Microchip Technology
Description:
Analog to Digital Converters - ADC 16 Bit Hi Speed A/D
Lifecycle:
New from this manufacturer.
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