SMA6F5.0A-TR

September 2011 Doc ID 14996 Rev 2 1/9
9
SMA6F
High junction temperature Transil™
Features
ECOPACK
®
2 compliant product
Peak pulse power:
600 W (10/1000 µs)
4 kW (8/20 µs)
Stand off voltage: 5, 12 or 13 V
Unidirectional type
Low clamping voltage versus standard series
Low leakage current, 0.2 µA at 25 °C
Operating T
j
max: 175 °C
JEDEC registered package outline
Complies with the following standards
IEC 61000-4-2 level 4:
15 kV (air discharge)
8 kV (contact discharge)
MIL STD 883G-Method 3015-7: class3B
25 kV (human body model)
Description
The SMA6F Transil series has been designed to
protect sensitive equipment against electro-static
discharges according to IEC 61000-4-2, MIL STD
883 Method 3015, and electrical over stress such
as IEC 61000-4-4 and 5. They are generally for
surges below 600 W 10/1000 µs.
This planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time. Their low clamping voltages provides a
better safety margin to protect sensitive circuits
with extended life time expectancy.
Packaged in SMAflat non exposed pad, this
minimizes PCB space consumption (footprint in
accordance with IPC 7531 standard).
TM: Transil is a trademark of STMicroelectronics
K
A
Unidirectional
SMAflat
www.st.com
Characteristics SMA6F
2/9 Doc ID 14996 Rev 2
1 Characteristics
Table 1. Absolute ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
P
PP
Peak pulse power dissipation
(1)
T
j
initial = T
amb
600 W
P Power dissipation on infinite heatsink T
lead
= 55 °C 6 W
I
FSM
Non repetitive surge peak forward current for
unidirectional types
t
p
= 10 ms
T
j
initial = T
amb
60 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Operating junction temperature range -55 to +175 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2. Thermal resistance
Symbol Parameter Value Unit
R
th (j-l)
Junction to leads 20 °C/W
Table 3. Electrical characteristics - definitions (T
amb
= 25 °C)
Symbol Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current @ V
RM
I
PP
Peak pulse current
αT Voltage temperature coefficient
V
F
Forward voltage drop
R
D
Dynamic resistance
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
F
V
F
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
F
V
F
SMA6F Characteristics
Doc ID 14996 Rev 2 3/9
Figure 1. Definition of I
pp
pulse
Table 4. Electrical characteristics - values (T
amb
= 25 °C)
Type
I
RM
max@V
RM
V
BR
@I
R
(1)
V
CL
@I
PP
10/1000 µs
R
D
(2)
10/1000 µs
V
CL
@I
PP
8/20 µs
R
D
(2)
8/20 µs
αT
(3)
25 °C 85 °C min typ max max max max
µA (Max) V V mA V A Ω VA Ω 10-4/°C
SMA6F5.0A 10 50 5.0 6.40 6.74 7.07 10 9.2 68 0.029 13.4 298 0.021 5.7
SMA6F12AVCL 0.2 1 12 13.2 13.7 14.3 1 18.5 31 0.135 22.9 157 0.055 7.8
SMA6F13A 0.2 1 13 14.4 15.2 15.9 1 20.4 29 0.154 23.9 147 0.054 8.3
1. Pulse test: t
p
<50ms.
2. To calculate maximum clamping voltage at other surge currents, use the following formula
V
CLmax
= R
D
x I
PP
+ V
BRmax
3. To calculate V
BR
versus junction temperature, use the following formula:
V
BR
@ T
j
= V
BR
@ 25 °C x (1 + αT x (T
j
- 25))
100
50
%I
PP
t
r
t
p
0
t
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
Figure 2. Relative peak power dissipation
versus initial junction temperature
Figure 3. Peak pulse power versus
exponential pulse duration
(T
j
initial = 25 °C)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0 25 50 75 100 125 150 175 200
P
PP
[T
j
initial] / P
PP
[T
j
initial=25°C]
initial (°C)T
j
P (kW)
PP
0.1
1.0
10.0
100.0
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
T
j
initial = 25 °C
t (ms)
p

SMA6F5.0A-TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors HJ Temp Transil
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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