STTH2R02A

October 2006 Rev 2 1/9
STTH2R02
Ultrafast recovery diode
Main product characteristics
Features and benefits
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
Description
The STTH2R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged in DO-15, SMA, and SMB, this device
is intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection.
Order codes
I
F(AV)
2 A
V
RRM
200 V
T
j
(max) 175° C
V
F
(typ) 0.7 V
t
rr
(typ) 15 ns
Part Number Marking
STTH2R02Q STTH2R02
STTH2R02QRL STTH2R02
STTH2R02A R2A
STTH2R02U R2U
KA
K
A
DO-15
STTH2R02Q
SMA
STTH2R02A
SMB
STTH2R02U
K
K
A
A
www.st.com
Characteristics STTH2R02
2/9
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.68 x I
F(AV)
+ 0.06 I
F
2
(RMS)
Table 1. Absolute ratings (limiting values at T
j
= 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
FRM
Repetitive peak forward current
DO-15
(1)
t
p
= 5 µs, F = 5 kHz
60 A
SMA, SMB
I
F(RMS)
RMS forward current
DO-15
60 A
SMA, SMB
I
F(AV)
Average forward current, δ = 0.5
DO-15 T
lead
= 90° C
2A
SMA, SMB T
c
= 90° C
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 75 A
T
stg
Storage temperature range -65 to + 175 ° C
T
j
Maximum operating junction temperature 175 ° C
1. On infinite heatsink with 10 mm lead length
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to lead Lead Length = 10 mm on infinite heatsink DO-15 45
° C/W
Junction to case SMA, SMB 30
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
3
µA
T
j
= 125° C 2 20
V
F
(2)
Forward voltage drop
T
j
= 25° C I
F
= 6 A 1.20
V
T
j
= 25° C
I
F
= 2 A
0.89 1.0
T
j
= 100° C 0.76 0.85
T
j
= 150° C 0.70 0.80
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %
STTH2R02 Characteristics
3/9
Table 4. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
23 30
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25° C
15 20
I
RM
Reverse recovery current
I
F
= 2 A, dI
F
/dt = -200 A/µs,
V
R
= 160 V, T
j
= 125° C
34 A
t
fr
Forward recovery time
I
F
= 2 A, dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
40 ns
V
FP
Forward recovery voltage
I
F
= 2 A, dI
F
/dt = 100 A/µs,
T
j
= 25° C
2.0 V
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values)
I
M
(A)
0
20
40
60
80
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
d
=tp/T
tp
I
M
T
δ
=tp/T
tp
I
M
P = 2 WP = 2 W
P = 1 WP = 1 W
P = 5 WP = 5 W
δ
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5
I
FM
(A)
T
j
=25°C
T
j
=150°C
V
FM
(V)
Figure 3. Forward voltage drop versus
forward current (maximum values)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration (SMA)
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5
I
FM
(A)
T
j
=25°C
T
j
=150°C
V
FM
(V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a)
Single pulse
SMA
S
cu
=1cm²
t
P
(s)

STTH2R02A

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers Recovery Diode Ultra Fast
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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