WeEn Semiconductors
ACT108-600E
AC Thyristor power switch
ACT108-600E All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 22 September 2016 3 / 12
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 600 V
I
T(RMS)
RMS on-state current full sine wave; T
lead
≤ 71 °C; Fig. 1 - 0.8 A
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 2; Fig. 3
- 13 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms - 14.3 A
I
2
t I
2
t for fusing t
p
= 10 ms; SIN - 0.32 A²s
dI
T
/dt rate of rise of on-state
current
I
G
= 20 mA - 100 A/µs
I
GM
peak gate current t = 20 μs - 1 A
V
GM
peak gate voltage positive applied gate voltage - 15 V
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
V
PP
peak pulse voltage T
j
= 25 °C; non-repetitive, off-state; ten
pulses on each voltage polarity; 20s or
more between successive pulses;; Fig. 4
- 2.5 kV
003aac803
0
0.2
0.4
0.6
0.8
1.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I
T(RMS)
(A)
(W)
P
tot
α
α
α = 180°
α = conduction angle
Fig. 1. Total power dissipation as a function of RMS on-state current; maximum values
