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ACT108-600E,126

P1-P3P4-P6P7-P9P10-P12P13-P13
WeEn Semiconductors
ACT108-600E
AC Thyristor power switch
ACT108-600E All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 22 September 2016 6 / 12
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 100 mA; LD+ G-;
T
j
= 25 °C; Fig. 6
1 - 10 mAI
GT
gate trigger current
V
D
= 12 V; I
T
= 100 mA; LD- G-;
T
j
= 25 °C; Fig. 6
1 - 10 mA
V
D
= 12 V; I
G
= 100 mA; LD+ G-;
T
j
= 25 °C; Fig. 7
- - 25 mAI
L
latching current
V
D
= 12 V; I
G
= 100 mA; LD- G-;
T
j
= 25 °C; Fig. 7
- - 20 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 7 - - 20 mA
V
T
on-state voltage I
T
= 1.1 A; T
j
= 25 °C; Fig. 8 - - 1.3 V
V
D
= 400 V; I
T
= 100 mA; T
j
= 125 °C 0.15 - - VV
GT
gate trigger voltage
V
D
= 12 V; I
T
= 100 mA; T
j
= 25 °C - - 1 V
V
D
= 600 V; T
j
= 25 °C - - 2 µAI
D
off-state current
V
D
= 600 V; T
j
= 125 °C - - 0.2 mA
V
CL
clamping voltage I
CL
= 0.1 mA; t
p
= 1 ms; T
j
= 25 °C;
Fig. 9
650 - - V
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit; Fig. 10
2000 - - V/µs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C;
I
T(RMS)
= 0.8 A; dV
com
/dt = 20 V/µs;
(snubberless condition); gate open
circuit; Fig. 11; Fig. 12
0.5 - - A/ms
WeEn Semiconductors
ACT108-600E
AC Thyristor power switch
ACT108-600E All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 22 September 2016 7 / 12
(1) LD+ G-
(2) LD- G-
Fig. 6. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
- 50 1501000 50
003aac811
1
2
3
0
I
L
I
L(25°C)
Fig. 7. Normalized latching current as a function of
junction temperature
003aaf722
0.0
0.5
1.0
1.5
2.0
0.0 0.5 1.0 1.5 2.0
V
T
(V)
I
T
(A)
(1) (2) (3)
V
o
= 0.758 V; R
s
= 0.263 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 8. On-state current as a function of on-state voltage
T
j
(°C)
- 50 1501000 50
003aac817
0.4
0.8
1.2
0
V
CL
V
CL(25°C)
Fig. 9. Normalized clamping voltage (upper limit) as a
function of junction temperature; minimum values
WeEn Semiconductors
ACT108-600E
AC Thyristor power switch
ACT108-600E All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 22 September 2016 8 / 12
T
j
(°C)
25 12510050 75
003aac813
4
8
12
0
A
B
10
6
2
A = dV
D
/dt at condition T
j
°C
B = dV
D
/dt at condition T
j
[125] °C
Fig. 10. Normalized rate of rise of off-state voltage as a
function of junction temperature
T
j
(°C)
25 12510050 75
003aac814
4
8
12
0
A
B
A = dI
com
/dt at condition T
j
°C
B = dI
com
/dt at condition T
j
[125] °C
V
D
= 400 V
Fig. 11. Normalized critical rate of rise of commutating
current as a function of junction temperature
003aac815
0
0.5
1.0
1.5
2.0
10
- 1
1 10 10
2
B (V/µs)
A [B]
A [spec]
A [B] = dI
com
/dt at condition B, dV
com
/dt
A [spec] is the data sheet value for dI
com
/dt
turn-off time is less than 20 ms
Fig. 12. Normalized critical rate of change of commutating current as a function of critical rate of change of
commutating voltage; minimum values
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ACT108-600E,126

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Manufacturer:
WeEn Semiconductors
Description:
Triacs TVS THYRISTOR 650V
Lifecycle:
New from this manufacturer.
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