MT8VDDT6464HDY-335F2

PDF: 09005aef80765fab/Source: 09005aef806e1d28 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD8C32_64x64HD.fm - Rev. E 11/08 EN
4 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x64, DR): 200-Pin DDR SDRAM SODIMM
Pin Assignments and Descriptions
Table 6: Pin Descriptions
Symbol Type Description
A0–A12 Input
Address inputs: Provide the row address for ACTIVE commands, and the
column address and auto precharge bit (A10) for READ/WRITE commands, to
select one location out of the memory array in the respective device bank. A10
sampled during a PRECHARGE command determines whether the PRECHARGE
applies to one device bank (A10 LOW, device bank selected by BA0 and BA1)
or all device banks (A10 HIGH). The address inputs also provide the op-code
during a MODE REGISTER SET command. BA0 and BA1 define which mode
register (mode register or extended mode register) is loaded during the LOAD
MODE REGISTER command.
BA0, BA1 Input
Bank address: BA0 and BA1 define the device bank to which an ACTIVE,
READ, WRITE, or PRECHARGE command is being applied.
CK0, CK0#,
CK1, CK1#
Input
Clock: CK and CK# are differential clock inputs. All control, command, and
address input signals are sampled on the crossing of the positive edge of CK
and the negative edge of CK#. Output data (DQ and DQS) is referenced to the
crossings of CK and CK#.
CKE0, CKE1 Input
Clock enable: CKE enables (registered HIGH) and CKE disables (registered
LOW) the internal clock, input buffers, and output drivers.
DM0–DM7 Input
Input data mask: DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write
access. DM is sampled on both edges of DQS. Although DM pins are input-only,
the DM loading is designed to match that of DQ and DQS pins.
RAS#, CAS#, WE# Input
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command
being entered.
S0#, S1# Input
Chip selects: S# enables (registered LOW) and disables (registered HIGH) the
command decoder.
SA0–SA2 Input
Presence-detect address inputs: These pins are used to configure the SPD
EEPROM address range on the I
2
C bus.
SCL Input
Serial clock for SPD EEPROM: SCL is used to synchronize the presence-detect
data transfer to and from the module.
DQ0–DQ63 I/O
Data input/output: Data bus.
DQS0–DQS7 I/O
Data strobe: Output with read data. Edge-aligned with read data. Input with
write data. Center-aligned with write data. Used to capture data.
SDA I/O
Serial data: SDA is a bidirectional pin used to transfer addresses and data into
and out of the presence-detect portion of the module.
V
DD Supply
Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V).
V
DDSPD Supply
Serial EEPROM power supply: +2.3V to +3.6V.
V
REF Supply
SSTL_2 reference voltage (V
DD/2).
VSS Supply
Ground.
NC
No connect: These pins are not connected on the module.
PDF: 09005aef80765fab/Source: 09005aef806e1d28 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD8C32_64x64HD.fm - Rev. E 11/08 EN
5 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x64, DR): 200-Pin DDR SDRAM SODIMM
Functional Block Diagram
Functional Block Diagram
Figure 2: Functional Block Diagram
U1
CS#
S0#
CS#
S1#
CS#
BA0–BA1
A0–A12
RAS#
CAS#
WE#
CKE0
CKE1
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM Rank 0
DDR SDRAM Rank 1
CK0
CK0#
DDR SDRAM
U1, U2, U5, U6
A0
SA0
SPD EEPROM
SDA
A1
SA1
A2
SA2
WP
SCL
U9
VREF
VSS
VDD
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
UDQS
UDM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDQS
LDM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
U5
LDQS
LDM
UDQS
UDM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS0
DM0
DQS1
DM1
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
UDQS
UDM
CS#
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
LDQS
LDM
DQS3
DM3
LDQS
LDM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
U2 U6
UDQS
UDM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQS4
DM4
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQS5
DM5
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQS6
DM6
DQS7
DM7
DDR SDRAM
DDR SDRAM
DDR SDRAM
SPD EEPROM
U3
CS#
CS#
UDQS
UDM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDQS
LDM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDQS
LDM
UDQS
UDM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
U4
CS#
CS#
UDQS
UDM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDQS
LDM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
U8
LDQS
LDM
UDQS
UDM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
U7
CK2
CK2#
CK1
CK1#
DDR SDRAM
U3, U4, U7, U8
V
SS
VDDSPD
Rank 0 = U1–U4
Rank 1 = U5–U8
PDF: 09005aef80765fab/Source: 09005aef806e1d28 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD8C32_64x64HD.fm - Rev. E 11/08 EN
6 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x64, DR): 200-Pin DDR SDRAM SODIMM
General Description
General Description
The MT8VDDT3264HD and MT8VDDT6464HD are high-speed, CMOS, dynamic
random access 256MB and 512MB memory modules organized in a x64 configuration.
These modules use DDR SDRAM devices with four internal banks.
DDR SDRAM modules use a double data rate architecture to achieve high-speed opera-
tion. The double data rate architecture is essentially a 2n-prefetch architecture with an
interface designed to transfer two data words per clock cycle at the I/O pins. A single
read or write access for DDR SDRAM modules effectively consists of a single
2n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and two corre-
sponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in
data capture at the receiver. DQS is a strobe transmitted by the DDR SDRAM during
READs and by the memory controller during WRITEs. DQS is edge-aligned with data for
READs and center-aligned with data for WRITEs.
DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing
of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK.
Commands are registered at every positive edge of CK. Input data is registered on both
edges of DQS, and output data is referenced to both edges of DQS, as well as to both
edges of CK.
Serial Presence-Detect Operation
DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a
256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module
type and various DDR SDRAM organizations and timing parameters. The remaining 128
bytes of storage are available for use by the customer. System READ/WRITE operations
between the master (system logic) and the slave EEPROM device occur via a standard
I
2
C bus using the DIMM’s SCL (clock) and SDA (data) signals, together with SA[2:0],
which provide eight unique DIMM/EEPROM addresses. Write protect (WP) is connected
to V
SS, permanently disabling hardware write protect.

MT8VDDT6464HDY-335F2

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR SDRAM 512MB 200SODIMM
Lifecycle:
New from this manufacturer.
Delivery:
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