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MT8VDDT6464HDY-335J1

P1-P3P4-P6P7-P9P10-P12P13-P13
Products and specifications discussed herein are subject to change by Micron without notice.
256MB, 512MB (x64, DR): 200-Pin DDR SDRAM SODIMM
Features
PDF: 09005aef80765fab/Source: 09005aef806e1d28 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD8C32_64x64HD.fm - Rev. E 11/08 EN
1 ©2004 Micron Technology, Inc. All rights reserved.
DDR SDRAM SODIMM
MT8VDDT3264HD – 256MB
1
MT8VDDT6464HD – 512MB
For component data sheets, refer to Micron’s Web site: www.micron.com
Features
• 200-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 256MB (32 Meg x 64), 512MB (64 Meg x 64)
•V
DD = VDDQ = +2.5V
(-40B: V
DD = VDDQ = +2.6V)
•V
DDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/
received with data—that is, source-synchronous
data capture
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
operation
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
compatibility
•Dual rank
• Gold edge contacts
Figure 1: 200-Pin SODIMM (MO-224)
Notes: 1. Not recommended for new designs.
2. Contact Micron for industrial temperature
module offerings.
Options Marking
• Operating temperature
2
– Commercial (0°C ≤ T
A
≤ +70°C) None
– Industrial (–40°C ≤ T
A
≤ +85°C) I
•Package
– 200-pin DIMM (standard) G
– 200-pin DIMM (lead-free) Y
• Memory clock, speed, CAS latency
– 5.0ns (200 MHz), 400 MT/s, CL = 3 -40B
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5 -335
– 7.5ns (133 MHz), 266 MT/s, CL = 2
1
-26A
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
1
-265
PCB height: 31.75mm (1.25in)
Notes: 1. The values of
t
RCD and
t
RP for -335 modules show 18ns to align with industry specifications;
actual DDR SDRAM device specifications are 15ns.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s)
t
RCD
(ns)
t
RP
(ns)
t
RC
(ns) NotesCL = 3 CL = 2.5 CL = 2
-40B PC3200 400 333 266 15 15 55
-335 PC2700 – 333 266 18 18 60 1
-26A PC2100 – 266 266 20 20 65
-265 PC2100 – 266 200 20 20 65
PDF: 09005aef80765fab/Source: 09005aef806e1d28 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD8C32_64x64HD.fm - Rev. E 11/08 EN
2 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x64, DR): 200-Pin DDR SDRAM SODIMM
Features
Notes: 1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes.
Example: MT8VDDT6464HDY-335F2
.
Table 2: Addressing
Parameter 256MB 512MB
Refresh count
8K 8K
Row address
8K (A0–A12) 8K (A0–A12)
Device bank address
4 (BA0, BA1) 4 (BA0, BA1)
Device configuration
256Mb (16 Meg x 16) 512Mb (32 Meg x 16)
Column address
512 (A0–A8) 1K (A0–A9)
Module rank address
2 (S0#, S1#) 2 (S0#, S1#)
Table 3: Part Numbers and Timing Parameters – 256MB
Base device: MT46V16M16,
1
256Mb DDR SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT8VDDT3264HDG-40B__
256MB 32 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT8VDDT3264HDY-40B__
256MB 32 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT8VDDT3264HDG-335__
256MB 32 Meg x 64 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3
MT8VDDT3264HDY-335__
256MB 32 Meg x 64 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3
MT8VDDT3264HDG-26A__
256MB 32 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2-3-3
MT8VDDT3264HDG-265__
256MB 32 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3
MT8VDDT3264HDY-265__
256MB 32 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3
Table 4: Part Numbers and Timing Parameters – 512MB
Base device: MT46V32M16,
1
512Mb DDR SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT8VDDT6464HDG-40B__
512MB 64 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT8VDDT6464HDY-40B__
512MB 64 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT8VDDT6464HDG-335__
512MB 64 Meg x 64 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3
MT8VDDT6464HDY-335__
512MB 64 Meg x 64 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3
MT8VDDT6464HDG-265__
512MB 64 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3
MT8VDDT6464HDY-265__
512MB 64 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3
PDF: 09005aef80765fab/Source: 09005aef806e1d28 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD8C32_64x64HD.fm - Rev. E 11/08 EN
3 ©2004 Micron Technology, Inc. All rights reserved.
256MB, 512MB (x64, DR): 200-Pin DDR SDRAM SODIMM
Pin Assignments and Descriptions
Pin Assignments and Descriptions
Table 5: Pin Assignments
200-Pin SODIMM Front 200-Pin SODIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1V
REF 51 VSS 101 A9 151 DQ42 2 VREF 52 VSS 102 A8 152 DQ46
3V
SS 53 DQ19 103 VSS 153 DQ43 4 VSS 54 DQ23 104 VSS 154 DQ47
5 DQ0 55 DQ24 105 A7 155 V
DD 6 DQ4 56 DQ28 106 A6 156 VDD
7DQ157VDD 107 A5 157 VDD 8DQ558VDD 108 A4 158 CK1#
9V
DD 59 DQ25 109 A3 159 VSS 10 VDD 60 DQ29 110 A2 160 CK1
11 DQS0 61 DQS3 111 A1 161 V
SS 12DM062DM3112 A0 162VSS
13 DQ2 63 VSS 113 VDD 163 DQ48 14 DQ6 64 VSS 114 VDD 164 DQ52
15 V
SS 65 DQ26 115 A10 165 DQ49 16 VSS 66 DQ30 116 BA1 166 DQ53
17 DQ3 67 DQ27 117 BA0 167 V
DD 18 DQ7 68 DQ31 118 RAS# 168 VDD
19 DQ8 69 VDD 119 WE# 169 DQS6 20 DQ12 70 VDD 120 CAS# 170 DM6
21 V
DD 71 NC 121 S0# 171 DQ50 22 VDD 72 NC 122 S1# 172 DQ54
23 DQ9 73 NC 123 NC 173 V
SS 24 DQ13 74 NC 124 NC 174 VSS
25 DQS1 75 VSS 125 VSS 175 DQ51 26 DM1 76 VSS 126 VSS 176 DQ55
27 V
SS 77 NC 127 DQ32 177 DQ56 28 VSS 78 NC 128 DQ36 178 DQ60
29 DQ10 79 NC 129 DQ33 179 V
DD 30 DQ14 80 NC 130 DQ37 180 VDD
31 DQ11 81 VDD 131 VDD 181 DQ57 32 DQ15 82 VDD 132 VDD 182 DQ61
33 V
DD 83 NC 133 DQS4 183 DQS7 34 VDD 84 NC 134 DM4 184 DM7
35 CK0 85 NC 135 DQ34 185 V
SS 36 VDD 86 NC 136 DQ38 186 VSS
37 CK0# 87 VSS 137 VSS 187 DQ58 38 VSS 88 VSS 138 VSS 188 DQ62
39 V
SS 89 NC 139 DQ35 189 DQ59 40 VSS 90 VSS 140 DQ39 190 DQ63
41 DQ16 91 NC 141 DQ40 191 V
DD 42 DQ20 92 VDD 142 DQ44 192 VDD
43 DQ17 93 VDD 143 VDD 193 SDA 44 DQ21 94 VDD 144 VDD 194 SA0
45 V
DD 95 CKE1 145 DQ41 195 SCL 46 VDD 96 CKE0 146 DQ45 196 SA1
47 DQS2 97 NC 147 DQS5 197 V
DDSPD 48 DM2 98 NC 148 DM5 198 SA2
49 DQ18 99 A12 149 V
SS 199 NC 50 DQ22 100 A11 150 VSS 200 NC
P1-P3P4-P6P7-P9P10-P12P13-P13

MT8VDDT6464HDY-335J1

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Manufacturer:
Micron
Description:
MODULE DDR SDRAM 512MB 200SODIMM
Lifecycle:
New from this manufacturer.
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