BAS16LD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 12 October 2010 3 of 11
NXP Semiconductors
BAS16LD
Single high-speed switching diode
5. Limiting values
[1] Device mounted on an FR4 PCB with 60 μm copper strip line.
[2] T
j
=25°C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB with 60 μm copper strip line.
[2] Reflow soldering is the only recommended soldering method.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse
voltage
-100V
V
R
reverse voltage - 100 V
I
F
forward current
[1]
215 mA
I
FRM
repetitive peak forward
current
t
p
≤ 0.5 μs;
δ≤0.25
-500mA
I
FSM
non-repetitive peak forward
current
square wave
[2]
t
p
=1μs-4A
t
p
=1ms - 1 A
t
p
=1s - 0.5 A
P
tot
total power dissipation T
amb
≤ 25 °C
[1][3]
-250mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1][2]
- - 500 K/W
