CYK256K16SCCB
Document #: 38-05526 Rev. *H Page 3 of 10
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–40°C to +85°C
Supply Voltage to Ground Potential ................ −0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State
[6, 7, 8]
....................................... −0.4V to 3.7V
DC Input Voltage
[6, 7, 8]
....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
Range Ambient Temperature (T
A
)V
CC
Industrial −25°C to +85°C 2.7V to 3.3V
DC Electrical Characteristics (Over the Operating Range)
Parameter Description Test Conditions
CYK256K16SCCB -55, 60, 70
UnitMin. Typ.
[2]
Max.
V
CC
Supply Voltage 2.7 3.0 3.3 V
V
OH
Output HIGH Voltage I
OH
= −0.1 mA V
CC
– 0.4 V
V
OL
Output LOW Voltage I
OL
= 0.1 mA 0.4 V
V
IH
Input HIGH Voltage 0.8 * V
CC
V
CC
+ 0.4 V
V
IL
Input LOW Voltage F = 0 −0.4 0.62 V
I
IX
Input Leakage
Current
GND < V
IN
< Vcc −1+1µA
I
OZ
Output Leakage
Current
GND < V
OUT
< Vcc, Output
Disabled
−1+1µA
I
CC
V
CC
Operating
Supply Current
f = f
MAX
= 1/t
RC
V
CC
= 3.3V,
I
OUT
= 0 mA,
CMOS level
14 for –55
14 for –60
8 for –70
22 for –55
22 for –60
15 for –70
mA
f = 1 MHz 1 for all speeds 5 for all speeds
I
SB1
Automatic CE
1
Power-down Current
—CMOS Inputs
CE
> V
CC
− 0.2V, CE
2
< 0.2V
V
IN
> V
CC
− 0.2V, V
IN
< 0.2V,
f = f
MAX
(Address and Data Only),
f = 0 (OE
, WE, BHE and BLE)
150 250 µA
I
SB2
Automatic CE
1
Power-down Current
—CMOS Inputs
CE > V
CC
− 0.2V, CE
2
< 0.2V
V
IN
> V
CC
− 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.3V
17 40 µA
Capacitance
[9]
Parameter Description Test Conditions Max. Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz
V
CC
= V
CC(typ)
8pF
C
OUT
Output Capacitance 8 pF
Thermal Resistance
[9]
Parameter Description Test Conditions VFBGA Unit
θ
JA
Thermal Resistance (Junction to Ambient) Test conditions follow standard test methods and
procedures for measuring thermal impedance,
per EIA/JESD51.
55 °C/W
θ
JC
Thermal Resistance (Junction to Case) 17 °C/W
Notes:
6. V
IH(MAX)
= V
CC
+ 0.5V for pulse durations less than 20 ns.
7. V
IL(MIN)
= –0.5V for pulse durations less than 20 ns.
8. Overshoot and undershoot specifications are characterized and are not 100% tested.
9. Tested initially and after design or process changes that may affect these parameters.
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