CYK256K16SCBU-70BVXI

CYK256K16SCCB
Document #: 38-05526 Rev. *H Page 4 of 10
AC Test Loads and Waveforms
Parameters 3.0V V
CC
Unit
R1 22000
R2 22000
R
TH
11000
V
TH
1.50 V
Switching Characteristics (Over the Operating Range)
[10]
Parameter Description
–55 –60 –70
UnitMin. Max. Min. Max. Min. Max.
Read Cycle
t
RC
Read Cycle Time 55
[14]
60 70 ns
t
AA
Address to Data Valid 55 60 70 ns
t
OHA
Data Hold from Address Change 5 8 10 ns
t
ACE
CE
1
LOW and CE
2
HIGH to Data Valid 55 60 70 ns
t
DOE
OE LOW to Data Valid 25 25 35 ns
t
LZOE
OE LOW to Low Z
[11, 12]
555ns
t
HZOE
OE HIGH to High Z
[11, 12]
25 25 25 ns
t
LZCE
CE
1
LOW and CE
2
HIGH to
Low Z
[11, 12]
555ns
t
HZCE
CE
1
HIGH and CE
2
LOW to
High Z
[11, 12]
25 25 25 ns
t
DBE
BLE/BHE LOW to Data Valid 55 60 70 ns
t
LZBE
BLE/BHE LOW to Low Z
[11, 12]
555ns
t
HZBE
BLE/BHE HIGH to High-Z
[11, 12]
10 10 25 ns
t
SK
[14]
Address Skew 0 5 10 ns
Write Cycle
[13]
t
WC
Write Cycle Time 55 60 70 ns
t
SCE
CE
1
LOW and CE
2
HIGH to Write End 45 45 60 ns
t
AW
Address Set-up to Write End 45 45 55 ns
t
HA
Address Hold from Write End 0 0 0 ns
t
SA
Address Set-up to Write Start 0 0 0 ns
Notes:
10.Test conditions assume signal transition time of 1 V/ns or higher, timing reference levels of V
CC(typ)
/2, input pulse levels of 0V to V
CC(typ),
and output loading of
the specified I
OL
/I
OH
and 30-pF load capacitance
11. t
HZOE
, t
HZCE
, t
HZBE
and t
HZWE
transitions are measured when the outputs enter a high-impedance state.
12.High-Z and Low-Z parameters are characterized and are not 100% tested.
13.The internal write time of the memory is defined by the overlap of WE
, CE
1
= V
IL
, CE
2
= V
IH
, BHE and/or BLE =V
IL
. All signals must be ACTIVE to initiate a write
and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that
terminates write.
14.To achieve 55-ns performance, the read access should be CE
controlled. In this case t
ACE
is the critical parameter and t
SK
is satisfied when the addresses are
stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable within 10 ns after the start of the read cycle.
VCC VCC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT V
TH
Equivalent to: THEVENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
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CYK256K16SCCB
Document #: 38-05526 Rev. *H Page 5 of 10
t
PWE
WE Pulse Width 40 40 45 ns
t
BW
BLE/BHE LOW to Write End 50 50 55 ns
t
SD
Data Set-up to Write End 25 25 25 ns
t
HD
Data Hold from Write End 0 0 0 ns
t
HZWE
WE LOW to High Z
[11, 12]
25 25 25 ns
t
LZWE
WE HIGH to Low Z
[11, 12]
555ns
Switching Characteristics (Over the Operating Range)
[10]
(continued)
Parameter Description
–55 –60 –70
UnitMin. Max. Min. Max. Min. Max.
Switching Waveforms
Read Cycle 1 (Address Transition Controlled)
[14, 15, 16]
Read Cycle 2 (OE Controlled)
[14, 16]
Notes:
15.Device is continuously selected. OE
, CE = V
IL
.
16. WE
is HIGH for Read Cycle.
ADDRESS
DATA OUT PREVIOUS DATA VALID DATA VALID
t
RC
t
AA
t
OHA
t
SK
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
HIGH
OE
CE
1
I
CC
IMPEDANC
E
ADDRESS
CE
2
V
CC
t
HZBE
BHE/BLE
t
LZBE
t
HZCE
DATA OUT
t
DBE
t
SK
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CYK256K16SCCB
Document #: 38-05526 Rev. *H Page 6 of 10
Write Cycle No. 1(WE Controlled)
[12, 13, 17, 18, 19]
Notes:
17.Data I/O is high impedance if OE
> V
IH
.
18.If Chip Enable goes INACTIVE simultaneously with WE
=HIGH, the output remains in a high-impedance state.
19.During the DON’T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied.
Switching Waveforms (continued)
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
SCE
t
WC
t
HZOE
VALID DATA
CE
1
A
DDRESS
CE
2
WE
DATAI/O
OE
BHE
/
BLE
t
BW
DO N’T CARE
CE
2
[+] Feedback

CYK256K16SCBU-70BVXI

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
IC PSRAM 4M PARALLEL 48VFBGA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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