IXFK250N10P Datasheet IXFX250N10P, IXFK250N10P | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 175°C 100 V

V

DGR

T

J

= 25°C to 175°C, R

GS

= 1MΩ 100 V

V

GSS

Continuous ± 20 V

V

GSM

Transient ± 30 V

I

D25

T

C

= 25°C (Chip Capability) 250 A

I

LRMS

Lead Current Limit, RMS 160 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

700 A

I

A

T

C

= 25°C 125 A

E

AS

T

C

= 25°C3 J

P

D

T

C

= 25°C 1250 W

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 175°C 20 V/ns

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-264) 1.13/10 Nm/lb.in.

F

C

Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.

Weight TO-264 10 g

PLUS247 6 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 3mA 100 V

V

GS(th)

V

DS

= V

GS

, I

D

= 1mA 3.0 5.0 V

I

GSS

V

GS

= ± 20V, V

DS

= 0V ± 200 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 50 μA

T

J

= 150°C 1 mA

R

DS(on)

V

GS

= 10V, I

D

= 50A, Note 1 6.5 mΩ

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFK250N10P

IXFX250N10P

V

DSS

= 100V

I

D25

= 250A

R

DS(on)

≤≤

≤

6.5m

ΩΩ

Ω

t

rr

≤≤

≤ 200ns

DS100021A(6/10)

Polar

TM

HiPerFET

TM

Power MOSFET

Features

z

Dynamic dv/dt Rating

z

Avalanche Rated

z

Fast Intrinsic Diode

z

Low Q

G

and R

DS(on)

z

Low Package Inductance

Advantages

z

Easy to Mount

z

Space Savings

Applications

z

DC-DC Converters

z

Battery Chargers

z

Switch-Mode and Resonant-Mode

Power Supplies

z

Uninterrupted Power Supplies

z

AC Motor Drives

z

High Speed Power Switching

Applications

G = Gate D = Drain

S = Source Tab = Drain

PLUS247 (IXFX)

Tab

G

D

S

TO-264 (IXFK)

S

G

D

Tab

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFK250N10P

IXFX250N10P

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 250 A

I

SM

Repetitive, Pulse Width Limited by T

JM

750 A

V

SD

I

F

= 100A, V

GS

= 0V, Note 1 1.3 V

t

rr

200 ns

Q

RM

0.7 μC

I

RM

10.4 A

I

F

= 125A, -di/dt = 100A/μs

V

R

= 50V, V

GS

= 0V

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 60A, Note 1 50 83 S

C

iss

16 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 4470 pF

C

rss

290 pF

t

d(on)

25 ns

t

r

30 ns

t

d(off)

50 ns

t

f

18 ns

Q

g(on)

205 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

77 nC

Q

gd

80 nC

R

thJC

0.12 °C/W

R

thCS

0.15 °C/W

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 1Ω (External)

TO-264 Outline

PLUS247

TM

Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

4 - Drain

Terminals: 1 - Gate

2 - Drain

3 - Source

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

IXFK250N10P

IXFX250N10P

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

25

50

75

100

125

150

175

200

225

250

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

6V

8V

7V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

350

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

7V

6V

8V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

25

50

75

100

125

150

175

200

225

250

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

6V

5V

7V

8V

Fig. 4. R

DS(on)

Normalized to I

D

= 125A Value vs.

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 250A

I

D

= 125A

Fig. 5. R

DS(on)

Normalized to I

D

= 125A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0 50 100 150 200 250 300 350

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V

- - - -

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

20

40

60

80

100

120

140

160

180

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

IXFK250N10P

IXFK250N10P

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