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IXFK250N10P
P1-P3
P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK250N10P
IXFX250N10P
Fig. 7. Input
Adm
itt
ance
0
20
40
60
80
100
120
140
160
180
200
3
.
54
.
0
4
.
55
.
05
.
5
6
.
06
.
57
.
0
7
.
58
.
0
V
GS
- Vol
ts
I
D
- Amperes
T
J
= 150ºC
2
5º
C
- 4
0ºC
Fig. 8. Transc
onducta
nce
0
20
40
60
80
100
120
140
0
20
40
60
80
100
12
0
140
160
1
80
200
I
D
- Am
p
eres
g
f s
- Si
emens
T
J
= - 40º
C
150ºC
25ºC
Fig. 9. Forw
ard Volta
ge Drop of Int
rinsic Diode
0
50
100
150
200
250
300
350
0.2
0.
3
0.
4
0.5
0.
6
0.
7
0.
8
0.9
1.
0
1.
1
1.2
1
.3
1.
4
V
SD
- Vol
ts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25
ºC
Fig. 10
. Ga
te
Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
160
180
200
220
Q
G
- Nan
oCou
l
om
bs
V
GS
- Volt
s
V
DS
= 50V
I
D
= 125A
I
G
= 10mA
Fig. 11
. Capac
ita
nce
10
100
1,000
10,
000
100,
000
0
5
10
15
20
25
30
35
40
V
DS
- Vol
ts
Capacit
ance - Pi
coFarads
f
= 1 MH
z
C
iss
s
C
rss
C
oss
Fig. 12
. Forward-
Bias
Saf
e Oper
at
ing A
rea
1
10
100
1,000
1
10
100
1000
V
DS
- Vol
ts
I
D
- Ampere
s
T
J
= 175ºC
T
C
= 25
ºC
Sin
gle Pulse
25µ
s
1ms
100µs
R
DS(on
)
Limi
t
10m
s
DC
100ms
Ex
ter
nal
Lead Limit
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXF_250N10P (93)8-04-08
IXFK250N10P
IXFX250N10P
Fi
g
. 13.
M
axi
m
u
m
T
r
an
sien
t T
h
erm
al I
m
p
ed
an
ce
0.
001
0.01
0.
1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Puls
e
W
idt
h -
S
e
c
o
nds
Z
(th)J
C
- º
C
/
W
P1-P3
P4-P5
IXFK250N10P
Mfr. #:
Buy IXFK250N10P
Manufacturer:
Littelfuse
Description:
MOSFET Polar Power MOSFET HiPerFET
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
Payment:
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