IXFK250N10P

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IXFK250N10P
IXFX250N10P
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.54.04.55.05.56.06.57.07.58.0
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
2C
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
350
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200 220
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 125A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
isss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
100ms
External Lead Limit
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IXYS REF: IXF_250N10P (93)8-04-08
IXFK250N10P
IXFX250N10P
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W

IXFK250N10P

Mfr. #:
Manufacturer:
Littelfuse
Description:
MOSFET Polar Power MOSFET HiPerFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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