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NTMFS4120NT3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 4
1 Publication Order Number:
NTMFS4120N/D
NTMFS4120N
Power MOSFET
30 V, 31 A, Single N−Channel,
SO−8 Flat Lead
Features
• Low R
DS(on)
• Optimized Gate Charge
• Low Inductance SO−8 Package
• These are Pb−Free Devices
Applications
• Notebooks, Graphics Cards
• DC−DC Converters
• Synchronous Rectification
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
$20 V
Continuous Drain Current
(Note 1 )
Steady
State
T
A
= 25°C
I
D
18
A
T
A
= 85°C 13
t v10 s T
A
= 25°C 31
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
2.2 W
t v10 s 6.9
Continuous Drain Current
(Note 2)
Steady
State
T
A
= 25°C
I
D
11
A
T
A
= 85°C 8.0
Power Dissipation (Note 2)
T
A
= 25°C
P
D
0.9 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
94 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
150
°C
Source Current (Body Diode) I
S
7.0 A
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 30 V, V
GS
= 10 V, I
PK
= 30 A,
L = 1 mH, R
G
= 25 W)
E
AS
450 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State
R
q
JC
1.7
°C/W
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
55.8
Junction−to−Ambient − t v10 s (Note 1)
R
q
JA
18
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
139.1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 1.0 in sq).
G
D
S
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4120NT1G SO−8 FL
(Pb−Free)
1500 Tape & Reel
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
4120N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
1
MARKING
DIAGRAM
4120N
AYWZZ
S
S
S
G
D
D
D
D
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
NTMFS4120NT3G SO−8 FL
(Pb−Free)
5000 Tape & Reel
30 V
4.2 mW @ 4.5 V
3.5 mW @ 10 V
R
DS(on)
Typ
31 A
I
D
Max
(Note 1)
V
(BR)DSS
NTMFS4120N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
21 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 24 V
T
J
= 25°C
1.0 mA
T
J
= 125°C
10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 20 V 100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 2.5 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
7.4 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 26 A
3.5 4.5 mW
V
GS
= 4.5 V, I
D
= 24 A
4.2 5.5
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 26 A 35 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 24 V
3600
pF
Output Capacitance C
OSS
640
Reverse Transfer Capacitance C
RSS
380
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 24 A
33 50
nC
Threshold Gate Charge Q
G(TH)
4.4
Gate−to−Source Charge Q
GS
13
Gate−to−Drain Charge Q
GD
14
Gate Resistance R
G
1.0
W
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 1.0 A, R
G
= 3.0 W
24
ns
Rise Time t
r
32
Turn−Off Delay Time t
d(OFF)
27
Fall Time t
f
31
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V, I
S
= 6.0 A
T
J
= 25°C
0.74 1.0
V
T
J
= 125°C
0.6
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 6.0 A
36
ns
Charge Time t
a
18
Discharge Time t
b
18
Reverse Recovery Charge Q
RR
34 nC
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMFS4120N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
T
J
= 125°C
0
20
2
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
10
0
Figure 1. On−Region Characteristics
3
30
20
0
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.4
1.6
1
0.8
0.6
50 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
T
J
= −55°C
75
T
J
= 25°C
I
D
= 26 A
V
GS
= 10 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
T
J
= 25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 10 V
100
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
T
J
= 125°C
3.0 V
3.2 V
V
GS
= 4.5 V
V
DS
≥ 10 V
10 25
2.8 V
10
4
30
80
30
V
GS
= 3.8 V to 10 V
40
80
125100
5
20 80
0.006
I
D,
DRAIN CURRENT (AMPS)
0.001
T
J
= 25°C
V
GS
= 10 V
0.003
0.004
0.007
10 40 50
0.008
T
J
= 125°C
T
J
= −55°C
30
0.006
0.003
0.007
0.002
0.004
0.005
1000
5
50
410
50
12
20 8010 40 5030
1.2
15
40
68
10000
3.4 V
3.6 V
0.005
7060 7060
60
70
70
60
0.002
P1-P3P4-P6

NTMFS4120NT3G

Mfr. #:
Buy NTMFS4120NT3G
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 11A SO8FL
Lifecycle:
New from this manufacturer.
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