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NCV4299D1R2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
NCV4299
http://onsemi.com
4
MAXIMUM RATINGS
Rating Symbol Min Max Unit
Input Voltage to Regulator (DC) V
I
-40 45 V
Input Peak Transient Voltage to Regulator wrt GND - - 60 V
Inhibit (INH) (Note 1) V
INH
-40 45 V
Sense Input (SI) V
SI
-0.3 45 V
Sense Input (SI) I
SI
-1.0 1.0 mA
Reset Threshold (RADJ) V
RE
-0.3 7.0 V
Reset Threshold (RADJ) I
RE
-10 10 mA
Reset Delay (D) V
D
-0.3 7.0 V
Reset Output (RO) V
RO
-0.3 7.0 V
Sense Output (SO) V
SO
-0.3 7.0 V
Output (Q) V
Q
-0.3 16 V
Output (Q) I
Q
-5.0 - mA
ESD Capability, Human Body Model (Note 5) ESD
HB
2.0 - kV
ESD Capability, Machine Model (Note 5) ESD
MM
200 - V
ESD Capability, Charged Device Model (Note 5) ESD
CDM
1.0 - kV
Junction Temperature T
J
- 150 °C
Storage Temperature T
stg
-50 150 °C
OPERATING RANGE
Input Voltage
5.0 V Version
3.3 V Version
V
I
4.5
4.4
45
45
V
Junction Temperature T
J
-40 150 °C
LEAD TEMPERATURE SOLDERING REFLOW (Note 3)
Lead Temperature Soldering (Note 5)
Reflow (SMD styles only), leaded
60-150 sec above 183, 30 sec max at peak
T
SLD
- 240 Pk
°C
Reflow (SMD styles only), lead free
60s-150 sec above 217, 40 sec max at peak
T
SLD
- 265 Pk
°C
Moisture Sensitivity Level MSL Level 1
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 14 pin package only.
2. Preliminary numbers.
3. Per
IPC / JEDEC J-STD-020C.
4. Measured to Pin 4. All ground pins connected to ground.
5. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC-Q100-002 (EIA/JESD22-A114)
ESD MM tested per AEC-Q100-003 (EIA/JESD22-A115)
ESD CDM tested per EIA/JES D22/C101, Field Induced Charge Model.
NCV4299
http://onsemi.com
5
THERMAL CHARACTERISTICS
Characteristic
Test Conditions (Typical Value)
Unit
Note 6 Note 7 Note 8
SO-8
Junction-to-Tab (y
JLx
, q
JLx
)
Junction-to-Ambient (R
θ
JA
, q
JA
)
54
172
52
144
48
118
°C/W
SO-14
Junction-to-Tab (y
JLx
, q
JLx
)
Junction-to-Ambient (R
θ
JA
, q
JA
)
19
112
21
89
20
67
°C/W
6. 2 oz Copper, 50 mm sq Copper area, 1.5 mm thick FR4
7. 2 oz Copper, 150 mm sq Copper area, 1.5 mm thick FR4
8. 2 oz Copper, 500 mm sq Copper area, 1.5 mm thick FR4
ELECTRICAL CHARACTERISTICS (-40°C < T
J
< 150°C; V
I
= 13.5 V unless otherwise noted.)
Characteristic
Symbol Test Conditions Min Typ Max Unit
Output Q
Output Voltage (5.0 V Version)
V
Q
1.0 mA < I
Q
< 150 mA, 6.0 V < V
I
< 16 V 4.9 5.0 5.1 V
Output Voltage (3.3 V Version) V
Q
1.0 mA < I
Q
< 150 mA, 5.5 V < V
I
< 16 V 3.23 3.3 3.37 V
Current Limit I
Q
- 250 400 500 mA
Quiescent Current (I
q
= I
I
– I
Q
) I
q
INH ON, I
Q
< 1.0 mA, T
J
= 25°C - 86 100
mA
Quiescent Current (I
q
= I
I
– I
Q
) I
q
INH ON, I
Q
< 1.0 mA - 90 105
mA
Quiescent Current (I
q
= I
I
– I
Q
) I
q
INH ON, I
Q
= 10 mA - 170 500
mA
Quiescent Current (I
q
= I
I
– I
Q
) I
q
INH ON, I
Q
= 50 mA - 0.7 2.0 mA
Quiescent Current (I
q
= I
I
– I
Q
) I
q
INH = 0 V, T
J
= 25°C - - 1.0
mA
Dropout Voltage (Note 9) V
dr
I
Q
= 100 mA - 0.22 0.50 V
Load Regulation
DV
Q
I
Q
= 1.0 mA to 100 mA - 5.0 30 mV
Line Regulation
DV
Q
V
I
= 6.0 V to 28 V, I
Q
= 1.0 mA - 10 25 mV
Power Supply Ripple Rejection P
SRR
ƒr = 100 Hz, Vr = 1.0 Vpp, I
Q
= 100 mA - 66 - dB
Inhibit (INH) (14 Pin Package Only)
Inhibit Off Voltage
V
INHOFF
V
Q
< 1.0 V - - 0.8 V
Inhibit On Voltage
5.0 V Version
3.3 V Version
V
INHON
V
Q
> 4.85 V
V
Q
> 3.2 V
3.5
3.5
-
-
-
-
V
Input Current I
INHON
I
INHOFF
INH ON
INH
= 0 V
-
-
3.0
0.5
10
2.0
mA
Reset (RO)
Switching Threshold
5.0 V Version
3.3 V Version
V
rt
-
4.50
2.96
4.60
3.06
4.80
3.16
V
Output Resistance R
RO
- 10 20 40
kW
Reset Output Low Voltage
5.0 V Version
3.3 V Version
V
RO
Q < 4.5 V, Internal R
RO
, I
RO
= -1.0 mA
Q < 2.96 V, Internal R
RO
, I
RO
= -1.0 mA
-
-
0.17
0.17
0.40
0.40
V
Allowable External Reset Pullup Resistor V
ROext
External Resistor to Q 5.6 - -
kW
Delay Upper Threshold V
UD
- 1.5 1.85 2.2 V
Delay Lower Threshold V
LD
- 0.4 0.5 0.6 V
9. Measured when the output voltage V
Q
has dropped 100 mV from the nominal value obtained at V
I
= 13.5 V.
NCV4299
http://onsemi.com
6
ELECTRICAL CHARACTERISTICS (continued) (-40°C < T
J
< 150°C; V
I
= 13.5 V unless otherwise noted.)
Characteristic Symbol Test Conditions Min Typ Max Unit
Reset (RO)
Delay Output Low Voltage
5.0 V Version
3.3 V Version
V
D
Q < 4.5 V, Internal R
RO
Q < 2.96 V, Internal R
RO
-
-
-
0.017
0.1
0.1
V
Delay Charge Current
5.0 V Version
3.3 V Version
I
D
Q < 4.5 V, Internal R
RO
, V
D
= 1.0 V
Q < 2.96 V, Internal R
RO
, V
D
= 1.0 V
4.0
-
7.1
-
12
-
mA
Power On Reset Delay Time t
d
C
D
= 100 nF 17 28 35 ms
Reset Reaction Time t
rr
C
D
= 100 nF 0.5 2.2 4.0
ms
Reset Adjust Switching Threshold
5.0 V Version
3.3 V Version
V
RADJ,TH
Q > 3.5 V
Q > 2.3 V
1.26
-
1.36
-
1.44
-
V
Input Voltage Sense (SI and SO)
Sense Input Threshold High
V
SI,HIGH
- 1.34 1.45 1.54 V
Sense Input Threshold Low V
SI,LOW
- 1.26 1.36 1.44 V
Sense Input Hysteresis - (Sense Threshold High) -
(Sense Threshold Low)
50 90 130 mV
Sense Input Current I
SI
- -1.0 0.1 1.0
mA
Sense Output Resistance R
SO
- 10 20 40
kW
Sense Output Low Voltage V
SO
V
SI
< 1.20 V, V
I
> 4.2 V, I
SO
= 0 mA
- 0.1 0.4 V
Allowable External Sense Out
Pullup Resistor
R
SOext
- 5.6 - -
kW
SI High to SO High Reaction Time t
pdSOLH
- - 4.4 8.0
ms
SI Low to SO Low Reaction Time t
pdSOHL
- - 3.8 5.0
ms
NCV4299
I
INH
D
RADJ
SI
Q
RO
SO
GND
I
I
I
INH
(14-Pin Part Only)
I
D
I
D
C
D
100 nF
I
RADJ
I
SI
V
RADJ
V
SI
V
INH
V
I
I
Q
V
Q
V
RO
V
SO
I
q
Figure 3. Measurement Circuit
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

NCV4299D1R2

Mfr. #:
Buy NCV4299D1R2
Manufacturer:
ON Semiconductor
Description:
IC REG LINEAR 5V 150MA 8SOIC
Lifecycle:
New from this manufacturer.
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