IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT16N10D2
IXTH16N10D2
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 8A, Note 1 7 11 S
C
iss
5700 pF
C
oss
V
GS
= -10V, V
DS
= 25V, f = 1MHz 1980 pF
C
rss
940 pF
t
d(on)
45 ns
t
r
43 ns
t
d(off)
340 ns
t
f
70 ns
Q
g(on)
225 nC
Q
gs
V
GS
= + 5V, V
DS
= 50V, I
D
= 8A 22 nC
Q
gd
126 nC
R
thJC
0.18C/W
R
thCS
TO-247 0.21 C/W
Safe-Operating-Area Specification
Characteristic Values
Symbol Test Conditions Min. Typ. Max.
SOA V
DS
= 100V, I
D
= 5.6A, T
C
= 75C, tp = 5s 556 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
V
SD
I
F
= 16A, V
GS
= -10V, Note 1 0.80 1.30 V
t
rr
205 ns
I
RM
8.50 A
Q
RM
0.88 μC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Resistive Switching Times
V
GS
= + 5V, V
DS
= 50V, I
D
= 8A
R
G
= 3.3 (External)
I
F
= 8A, -di/dt = 100A/s
V
R
= 100V, V
GS
= -10V
TO-247 Outline
R
L1
A2
Q
E
A
D
c
B
A
b
C
L
D
S
D2
E1
A2 A2 A2
e
0P1
ixys option
A1
b4
b2
D1
0P
O 0K M D B M
+
O J M C A M
+
1
2 3
4
+
+
PINS: 1 - Gate
2, 4 - Drain
3 - Source
TO-268 Outline
Terminals: 1 - Gate 2,4 - Drain
3 - Source