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IXTH16N10D2

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT16N10D2
IXTH16N10D2
Fig. 7. Normalized R
DS(on)
vs. Junction Temperature
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 0V
I
D
= 8A
Fig. 8. R
DS(on)
Normalized to I
D
= 8A Value
vs. Drain Current
0.0
0.5
1.0
1.5
2.0
2.5
0 5 10 15 20 25 30 35 40
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 0V
5V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 9. Input Admittance
0
10
20
30
40
50
60
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150
o
C
25
o
C
- 40
o
C
V
DS
= 20V
Fig. 10. Transconductance
0
5
10
15
20
25
30
35
0 102030405060
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
V
DS
= 20V
25
o
C
150
o
C
Fig. 12. Forward Voltage Drop of Intrinsic Diode
0
5
10
15
20
25
30
35
40
45
50
0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- Volts
I
S
- Amperes
T
J
= 150
o
C
V
GS
= -10V
T
J
= 25
o
C
Fig. 11. Normalized Breakdown and Threshold
Voltages vs. Junction Temperature
0.8
0.9
1.0
1.1
1.2
1.3
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
BV / V
GS(off)
V
GS(off)
@ V
DS
= 25V
BV
DSX
@ V
GS
= - 5V
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_16N10D2(8C) 11-21-11-A
IXTT16N10D2
IXTH16N10D2
Fig. 17. Maximum Transient Thermal Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 17. Maximum Transient Thermal Impedance
hvjv
0.300
Fig. 14. Gate Charge
-5
-4
-3
-2
-1
0
1
2
3
4
5
0 20 40 60 80 100 120 140 160 180 200 220 240
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 8A
I
G
= 10mA
Fig. 13. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 15. Forward-Bias Safe Operating Area
@ T
C
= 25
o
C
1
10
100
1,000
1 10 100
V
DS
- Volts
I
D
- Amperes
1ms
100μs
R
DS(on)
Limit
10ms
100ms
DC
25μs
T
J
= 175
o
C
T
C
= 25
o
C
Single Pulse
Fig. 16. Forward-Bias Safe Operating Area
@ T
C
= 75
o
C
1
10
100
1,000
110100
V
DS
- Volts
I
D
- Amperes
T
J
= 175
o
C
T
C
= 75
o
C
Single Pulse
25μs
1ms
100μs
R
DS(on)
Limit
10ms
100ms
DC
P1-P3P4-P5

IXTH16N10D2

Mfr. #:
Buy IXTH16N10D2
Manufacturer:
Littelfuse
Description:
MOSFET N-CH 100V 16A MOSFET
Lifecycle:
New from this manufacturer.
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