TJA1080A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 6 — 28 November 2012 31 of 49
NXP Semiconductors
TJA1080A
FlexRay transceiver
Pin ERRN
I
OH(ERRN)
HIGH-level output
current on pin ERRN
node configuration;
V
ERRN
=V
IO
0.4 V; V
IO
=V
CC
1500 600 100 A
star configuration;
V
ERRN
=V
IO
0.4 V; V
IO
=V
CC
10 +1A
I
OL(ERRN)
LOW-level output
current on pin ERRN
V
ERRN
= 0.4 V 300 700 1500 A
Pin RXEN
I
OH(RXEN)
HIGH-level output
current on pin RXEN
V
RXEN
= V
IO
0.4 V; V
IO
=V
CC
4 1.7 0.5 mA
I
OL(RXEN)
LOW-level output
current on pin RXEN
V
RXEN
= 0.4 V 1 3.2 8 mA
Pins TRXD0 and TRXD1
V
IH(TRXD0)
HIGH-level input voltage
on pin TRXD0
Star-idle and Star-transmit
modes
0.7V
BUF
-V
BUF
+ 0.3 V
V
IL(TRXD0)
LOW-level input voltage
on pin TRXD0
Star-idle and Star-transmit
modes
0.3 - 0.3V
BUF
V
V
OL(TRXD0)
LOW-level output
voltage on pin TRXD0
R
pu
= 200 0.3 - +0.8 V
V
IH(TRXD1)
HIGH-level input voltage
on pin TRXD1
Star-idle and Star-transmit
modes
0.7V
BUF
-V
BUF
+ 0.3 V
V
IL(TRXD1)
LOW-level input voltage
on pin TRXD1
Star-idle and Star-transmit
modes
0.3 - 0.3V
BUF
V
V
OL(TRXD1)
LOW-level output
voltage on pin TRXD1
R
pu
= 200 0.3 - +0.8 V
Pins BP and BM
V
o(idle)(BP)
idle output voltage on
pin BP
Normal, Receive-only, Star-idle,
Star-transmit and Star-receive
modes; V
TXEN
=V
IO
0.4V
BUF
0.5V
BUF
0.6V
BUF
V
Standby, Go-to-sleep, Sleep,
Star-standby and Star-sleep
modes
0.1 0 +0.1 V
V
o(idle)(BM)
idle output voltage on
pin BM
Normal, Receive-only, Star-idle,
Star-transmit and Star-receive
modes; V
TXEN
=V
IO
0.4V
BUF
0.5V
BUF
0.6V
BUF
V
Standby, Go-to-sleep, Sleep,
Star-standby and Star-sleep
modes
0.1 0 +0.1 V
I
o(idle)BP
idle output current on
pin BP
60 V V
BP
+60 V; with
respect to GND and V
BAT
7.5 - +7.5 mA
I
o(idle)BM
idle output current on
pin BM
60 V V
BM
+60 V; with
respect to GND and V
BAT
7.5 - +7.5 mA
V
o(idle)(dif)
differential idle output
voltage
25 0 +25 mV
Table 13. Static characteristics
…continued
All parameters are guaranteed for V
BAT
= 6.5 V to 60 V; V
CC
= 4.75 V to 5.25 V; V
BUF
= 4.75 V to 5.25 V; V
IO
= 2.2 V to 5.25 V;
T
vj
=
40
C to +150
C; R
bus
= 45
; R
TRXD
= 200
unless otherwise specified. All voltages are defined with respect to
ground; positive currents flow into the IC.
Symbol Parameter Conditions Min Typ Max Unit
TJA1080A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 6 — 28 November 2012 32 of 49
NXP Semiconductors
TJA1080A
FlexRay transceiver
V
OH(dif)
differential HIGH-level
output voltage
40 R
bus
55 ;
V
CC
=V
BUF
= 5 V;
C
bus
=100pF
600 850 1500 mV
V
OL(dif)
differential LOW-level
output voltage
40 R
bus
55 ;
V
CC
=V
BUF
= 5 V;
C
bus
=100pF
1500 850 600 mV
V
IH(dif)
differential HIGH-level
input voltage
normal power modes;
10 V V
BP
+15 V;
10 V V
BM
+15 V
150 210 300 mV
V
IL(dif)
differential LOW-level
input voltage
normal power modes;
10 V V
BP
+15 V;
10 V V
BM
+15 V
300 210 150 mV
low power modes;
10 V V
BP
+15 V;
10 V V
BM
+15 V
400 210 100 mV
V
i(dif)(H-L)
differential input volt.
diff. betw. HIGH- and
LOW-levels (abs. value)
normal power modes
(V
BP
+V
BM
)/2=2.5V
--10%
V
i(dif)det(act)
activity detection
differential input voltage
(absolute value)
normal power modes 150 210 300 mV
I
O(sc)
short-circuit output
current (absolute value)
on pin BP; 0 V V
BP
60V--35mA
on pin BM; 0 V V
BM
60V--35mA
on pins BP and BM; V
BP
=V
BM
;
0V V
BP
60 V;
0V V
BM
60 V
--35mA
R
i(BP)
input resistance on pin
BP
idle level; R
bus
= 10 18.5 40 k
R
i(BM)
input resistance on pin
BM
idle level; R
bus
= 10 18.5 40 k
R
i(dif)(BP-BM)
differential input
resistance between pin
BP and pin BM
idle level; R
bus
= 20 37 80 k
I
LI(BP)
input leakage current on
pin BP
V
BP
=5V;
V
BAT
=V
CC
=V
IO
=0 V
10 0 +10 A
I
LI(BM)
input leakage current on
pin BM
V
BM
=5V;
V
BAT
=V
CC
=V
IO
=0 V
10 0 +10 A
V
cm(bus)(DATA_0)
DATA_0 bus
common-mode voltage
R
bus
= 45 0.4V
BUF
0.5V
BUF
0.6V
BUF
V
V
cm(bus)(DATA_1)
DATA_1 bus
common-mode voltage
R
bus
= 45 0.4V
BUF
0.5V
BUF
0.6V
BUF
V
V
cm(bus)
bus common-mode
voltage difference
R
bus
= 45 25 0 +25 mV
C
i(BP)
input capacitance on pin
BP
not tested; with respect to all
other pins at ground;
V
BP
= 100 mV; f = 5 MHz
[2]
- 8 15 pF
Table 13. Static characteristics …continued
All parameters are guaranteed for V
BAT
= 6.5 V to 60 V; V
CC
= 4.75 V to 5.25 V; V
BUF
= 4.75 V to 5.25 V; V
IO
= 2.2 V to 5.25 V;
T
vj
=
40
C to +150
C; R
bus
= 45
; R
TRXD
= 200
unless otherwise specified. All voltages are defined with respect to
ground; positive currents flow into the IC.
Symbol Parameter Conditions Min Typ Max Unit
TJA1080A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 6 — 28 November 2012 33 of 49
NXP Semiconductors
TJA1080A
FlexRay transceiver
[1] Current flows from V
CC
to V
BUF
. This means that the maximum sum current I
CC
+ I
BUF
is 35 mA.
[2] These values are based on measurements taken on several samples (less than 10 pieces). These measurements have taken place in
the laboratory and have been done at T
amb
= 25 C and T
amb
= 125 C. No characterization has been done for these parameters. No
industrial test will be performed on production products.
C
i(BM)
input capacitance on pin
BM
not tested; with respect to all
other pins at ground;
V
BM
=100mV; f=5MHz
[2]
- 8 15 pF
C
i(dif)(BP-BM)
differential input
capacitance between
pin BP and pin BM
not tested; with respect to all
other pins at ground;
V
(BM-BP)
= 100 mV; f = 5 MHz
[2]
-25pF
Pin INH1
V
OH(INH1)
HIGH-level output
voltage on pin INH1
I
INH1
= 0.2 mA V
BAT
0.8 V
BAT
0.3 V
BAT
0.1 V
I
L(INH1)
leakage current on pin
INH1
Sleep mode 50 +5A
I
OL(INH1)
LOW-level output
current on pin INH1
V
INH1
= 0 V 15 5 1mA
Pin INH2
V
OH(INH2)
HIGH-level output
voltage on pin INH2
I
INH2
= 0.2 mA V
BAT
0.8 V
BAT
0.3 V
BAT
0.1 V
I
L(INH2)
leakage current on pin
INH2
Sleep mode 50 +5A
I
OL(INH2)
LOW-level output
current on pin INH2
V
INH2
= 0 V 15 5 1mA
Pin WAKE
V
th(det)(WAKE)
detection threshold
voltage on pin WAKE
low power mode 2.5 - 4.5 V
I
IL(WAKE)
LOW-level input current
on pin WAKE
V
WAKE
= 2.4 V for
t>t
wake(WAKE)
3- 11A
I
IH(WAKE)
HIGH-level input current
on pin WAKE
V
WAKE
= 4.6 V for
t>t
wake(WAKE)
11 - 3 A
Temperature protection
T
j(warn)(medium)
medium warning
junction temperature
V
BAT
> 5.5 V 155 165 175 C
T
j(dis)(high)
high disable junction
temperature
V
BAT
> 5.5 V 180 190 200 C
Power-on reset
V
th(det)POR
power-on reset
detection threshold
voltage
3.0 - 3.4 V
V
th(rec)POR
power-on reset recovery
threshold voltage
3.1 - 3.5 V
V
hys(POR)
power-on reset
hysteresis voltage
100 - 200 mV
Table 13. Static characteristics …continued
All parameters are guaranteed for V
BAT
= 6.5 V to 60 V; V
CC
= 4.75 V to 5.25 V; V
BUF
= 4.75 V to 5.25 V; V
IO
= 2.2 V to 5.25 V;
T
vj
=
40
C to +150
C; R
bus
= 45
; R
TRXD
= 200
unless otherwise specified. All voltages are defined with respect to
ground; positive currents flow into the IC.
Symbol Parameter Conditions Min Typ Max Unit

TJA1080ATS/2/T,112

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
CAN Interface IC FLEXRAY TRANSCEIVER
Lifecycle:
New from this manufacturer.
Delivery:
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