NCP81063MNTXG

NCP81063
www.onsemi.com
4
Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise stated: −10°C < T
A
< +125°C; 4.5 V < V
CC
< 13.2 V,
4.5 V < BST−SWN < 13.2 V, 4.5 V < BST < 30 V, 0 V < SWN < 21 V)
Parameter Test Conditions Min. Typ. Max. Units
SUPPLY VOLTAGE
VCC Operation Voltage
4.5 13.2 V
UNDERVOLTAGE LOCKOUT
VCC Start Threshold 3.8 4.35 4.5 V
VCC UVLO Hysteresis 150 200 250 mV
SUPPLY CURRENT
Normal Mode Icc + Ibst, EN = 5 V, PWM = OSC, Fsw = 100 KHz,
Cload = 3 nF for DRVH, 3 nF for DRVL
10 mA
Standby Current Icc + Ibst, EN = GND 0.5 1.4 mA
Standby Current I
CC
+ I
BST
, EN = HIGH, PWM = LOW,
No loading on DRVH & DRVL
2.0 mA
Standby Current I
CC
+ I
BST
, EN = HIGH, PWM = HIGH,
No loading on DRVH & DRVL
2.0 mA
BOOTSTRAP DIODE
Forward Voltage V
CC
= 12 V, forward bias current = 2 mA 0.1 0.4 0.6 V
PWM INPUT
PWM Input High 3.4 V
PWM Mid−State 1.3 2.7 V
PWM Input Low 0.7 V
ZCD Blanking Timer 250 ns
HIGH SIDE DRIVER (VCC = 12 V)
Output Impedance, Sourcing Current VBST − VSW = 12 V 1.9 3.0 W
Output Impedance, Sinking Current VBST − VSW = 12 V 1.0 1.7 W
DRVH Rise Time trDRVH V
VCC
= 12 V, 3 nF load, VBST−VSW = 12 V 16 30 ns
DRVH Fall Time tfDRVH V
VCC
= 12 V, 3 nF load, VBST−VSW = 12 V 11 25 ns
DRVH Turn−Off Propagation Delay
tpdl
DRVH
C
LOAD
= 3 nF 8.0 30 ns
DRVH Turn−On Propagation Delay
tpdh
DRVH
C
LOAD
= 3 nF 30 ns
SW Pull Down Resistance SW to PGND 37.5 kW
DRVH Pull Down Resistance DRVH to SW, BST−SW = 0 V 37.55 kW
HIGH SIDE DRIVER (VCC = 5 V)
Output Impedance, Sourcing Current VBST − VSW = 5 V 2.5 W
Output Impedance, Sinking Current VBST − VSW = 5 V 1.6 W
DRVH Rise Time tr
DRVH
V
VCC
= 5 V, 3 nF load, VBST − VSW = 5 V 30 ns
DRVH Fall Time tf
DRVH
V
VCC
= 5 V, 3 nF load, VBST − VSW = 5 V 27 ns
DRVH Turn−Off Propagation Delay
tpdl
DRVH
C
LOAD
= 3 nF 20 ns
DRVH Turn−On Propagation Delay
tpdh
DRVH
C
LOAD
= 3 nF 27 ns
SW Pull Down Resistance SW to PGND 37.5 kW
DRVH Pull Down Resistance DRVH to SW, BST−SW = 0 V 37.5 kW
LOW SIDE DRIVER (VCC = 12 V)
Output Impedance, Sourcing Current 2.0 3.0 W
NCP81063
www.onsemi.com
5
Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise stated: −10°C < T
A
< +125°C; 4.5 V < V
CC
< 13.2 V,
4.5 V < BST−SWN < 13.2 V, 4.5 V < BST < 30 V, 0 V < SWN < 21 V)
Parameter UnitsMax.Typ.Min.Test Conditions
LOW SIDE DRIVER (VCC = 12 V)
Output Impedance, Sinking Current 0.7 1.5 W
DRVL Rise Time tr
DRVL
C
LOAD
= 3 nF 16 35 ns
DRVL Fall Time tf
DRVL
C
LOAD
= 3 nF 11 20 ns
DRVL Turn−Off Propagation Delay
tpdl
DRVL
C
LOAD
= 3 nF 35 ns
DRVL Turn−On Propagation Delay
tpdh
DRVL
C
LOAD
= 3 nF 8.0 30 ns
DRVL Pull Down Resistance DRVL to PGND, VCC = PGND 37.5 kW
LOW SIDE DRIVER (VCC = 5 V)
Output Impedance, Sourcing Current 2.5 W
Output Impedance, Sinking Current 1.0 W
DRVL Rise Time tr
DRVL
C
LOAD
= 3 nF 30 ns
DRVL Fall Time tf
DRVL
C
LOAD
= 3 nF 22 ns
DRVL Turn−Off Propagation Delay
tpdl
DRVL
C
LOAD
= 3 nF 27 ns
DRVL Turn−On Propagation Delay
tpdh
DRVL
C
LOAD
= 3 nF 12 ns
DRVL Pull Down Resistance DRVL to PGND, VCC = PGND 37.5 kW
EN INPUT
Input Voltage High 2.0 V
Input Voltage Low 1.0 V
Hysteresis 500 mV
Normal Mode Bias Current −1 1 mA
Enable Pin Sink Current 4 30 mA
Propagation Delay Time 20 40 ns
SW Node
SW Node Leakage Current 20 mA
Zero Cross Detection Threshold Voltage SW to −20 mV, ramp slowly until BG goes off
(Start in DCM mode) (Note 2)
−3 mV
Table 5. DECODER TRUTH TABLE
PWM INPUT ZCD DRVL DRVH
PWM High ZCD Reset Low High
PWM Mid Positive current through the inductor High Low
PWM Mid Zero current through the inductor Low Low
PWM Low ZCD Reset High Low
2. Guaranteed by design; not production tested.
NCP81063
www.onsemi.com
6
Figure 4.
Figure 5. Timing Diagram
PWM
DRVH−SW
DRVL
IL
1V
1V

NCP81063MNTXG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC MOSFET DVR SYNC BUCK 8DFN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet