NB3N3020DTR2G

NB3N3020
http://onsemi.com
4
become active synchronous to the internal PLL output clock
and do not create any glitches or runt pulses during the
transition. In power down mode, the outputs are tristated
regardless of the state of the OE1, OE2.
The device has an output enable [OE1] which accepts
LVTTL/LVCMOS levels and when set LOW will disable
the LVTTL/LVCMOS level CLK1 to tri*state. Output
enable OE2 accepts LVTTL/LVCMOS levels to disable the
LVPECL level outputs by forcing CLK2 LOW and CLK2b
HIGH. When OE1 or OE2 are set LOW (Disabled), the PLL
remains running while the respective clock outputs are
disabled. When the OE1 or OE2 are set enabled (HIGH), the
clock outputs become active synchronous to the internal
PLL output clock and will not create any glitches or runt
pulses during the transition. Both OE1 and OE2 inputs have
pullup resistors which default to VDD when floated open.
In power down mode, the outputs are tri*stated (zero
current) regardless of the state of the OE1, OE2.
Changing Clock Multiplier
The clock output frequency can be dynamically changed
using Sel0, Sel1, Sel2 pins. When the clock frequency is
changed, the clock outputs move from one frequency to
another and the PLL locks to the new frequency within a
settling time of 3 msec. There is no glitch during this
transition when the clock outputs are active {not tristated
by OE1, OE2}.
Crystal/ Clock Input
The device takes in a 5 – 27 MHz crystal input or 2 –
210 MHz clock input. Once powered up, the input frequency
is fixed and should not be changed dynamically. The input
cannot accept a spread spectrum clock and needs a fixed
frequency clock for device operation. The input frequencies
for clock and crystal input for specific multipliers are
determined by Table 3.
Power Up
When the NB3N3020 is powered up, it takes 10 msec for
the PLLs to stabilize and lock to the desired frequency of
operation as selected by Sel0, Sel1, Sel2. During this time
period, there may be glitches in the clock outputs.
Power Down:
The device can be powered down when the Sel0, Sel1,
Sel2 pins are all connected to GND. In this mode of
operation, PLL is turned off and the device consumes less
than 5 mA of current. There may be a glitch in clock outputs
when the device is powering down. In power down mode,
the outputs are tristated regardless of the state of the OE1,
OE2.
In the cases where the application requires glitchless
transitions, in order to avoid glitches it is recommended to
use synchronous OE signaling to mask glitches to the clock
outputs.
NB3N3020
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Table 3. ATTRIBUTES
Characteristics Value
ESD Protection Human Body Model 2 kV
Moisture Sensitivity, Indefinite Time Out of Dry pack (Note 1) Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 @ 0.125 in
Transistor Count 8287 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 4. MAXIMUM RATINGS (Note 2)
Symbol
Parameter Condition 1 Condition 2 Rating Unit
V
DD
Positive Power Supply GND = 0 V 4.6 V
V
I
Input Voltage (VIN) GND = 0 V GND V
I
V
DD
0.5 V to V
DD
+ 0.5 V V
I
out
LVPECL Output Current Continuous
Surge
25
50
mA
T
A
Operating Temperature Range 40 to +85 °C
T
stg
Storage Temperature Range 65 to +150 °C
q
JA
Thermal Resistance (JunctiontoAmbient) 0 lfpm
500 lfpm
TSSOP–16
TSSOP–16
138
108
°C/W
q
JC
Thermal Resistance (JunctiontoCase) (Note 3) TSSOP16 33 to 36 °C/W
T
sol
Wave Solder 265 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
3. JEDEC standard multilayer board 2S2P (2 signal, 2 power).
Table 5. DC CHARACTERISTICS (V
DD
= 3.3 V ±10%, GND = 0 V, T
A
= 40°C to +85°C)
Symbol
Characteristic Min Typ Max Unit
V
DD
Power Supply Voltage 2.97 3.3 3.63 V
I
DD
Power Supply Current (Note 4) 60 75 mA
I
DDOE
Power Supply Current when OE1, OE2 is Set Low 50 mA
I
DDOFF
Power Supply Current when PLL is powered off by Sel0, Sel1, Sel2 5 mA
V
IH
Input HIGH Voltage (X1/CLK, OE1, OE2) 2000 V
DD
+ 300 mV
V
IL
Input LOW Voltage (X1/CLK, OE1, OE2) GND 300 800 mV
V
IH
Input HIGH Voltage (Sel0, Sel1, Sel2) 0.72 V
DD
V
DD
+ 300 mV
V
IL
Input LOW Voltage (Sel0, Sel1, Sel2) GND 300 800 mV
V
IM
Input Mid Voltage (Sel0, Sel1, Sel2) (When left open, defaults to V
DD
/2 V
DD
/2 mV
V
OH
Output HIGH Voltage for CLK2, CLK2 (See Figure 3) V
DD
– 1.145 V
DD
– 0.895 V
V
OL
Output LOW Voltage for CLK2, CLK2 (See Figure 3) V
DD
– 2.090 V
DD
– 1.600 V
V
OH
Output HIGH Voltage for CLK1 [I
OH
= 12 mA] 2.4 V
V
OL
Output LOW Voltage for CLK1 [I
OL
= 12 mA] 0.4 V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Measurement taken at FCLK
out
= 125 MHz with LVPECL and LVCMOS/ LVTTL outputs not terminated.
NB3N3020
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Table 6. AC CHARACTERISTICS (V
DD
= 3.3 V ±10%, GND = 0 V, T
A
= 40°C to +85°C) (Note 5)
Symbol
Characteristic Min Typ Max Unit
f
CLKIN
Crystal Input Frequency 5.0 27 MHz
f
CLKIN
Clock Input Frequency 2.0 210 MHz
f
CLKOUT
Output Clock Frequency 210 MHz
F
NOISE
PhaseNoise Performance (f
CLKout
= 125 MHz, 25 MHz input)
@ 100 Hz offset from carrier 95 dBc/Hz
@ 1 kHz offset from carrier 107 dBc/Hz
@ 10 kHz offset from carrier 112 dBc/Hz
@ 100 kHz offset from carrier 117 dBc/Hz
@ 1 MHz offset from carrier 117 dBc/Hz
@ 10 MHz offset from carrier 134 dBc/Hz
Tjitter pp CycletoCycle Jitter peak to peak (Note 6)
f
CLKout
= 100 MHz and 125 MHz, 25 MHz input
20 36 ps
Tjitter rms CycletoCycle Jitter rms (Note 7)
f
CLKout
= 100 Mhz and 125 MHz, 25 MHz input
5.0 9.0 ps
Tjitter pp Period Jitter peak to peak (Note 7)
f
CLKout
= 100 MHz and 125 MHz, 25 MHz input
15 20 ps
Tjitter rms Period Jitter rms (Note 7)
f
CLKout
= 100 MHz and 125 MHz, 25 MHz input
3.0 5.0 ps
Start up time from power up 10 ms
OE Output Enable/Disable Time 10 us
PLL settling time 3 ms
t
DUTY_CYCLE
Output Clock Duty Cycle (Measured at cross point for LV PECL clock
output and VDD/2 for LVCMOS/ LVTTL clock output)
45 50 55 %
t
R
Output Rise Time (Note 5) (Measured from 20% to 80%. Figure 2) LV
PECL Output
340 700 ps
t
F
Output Fall Time (Note 5) (Measured from 20% to 80%. Figure 2) LV
PECL Output
340 700 ps
t
R
Output Rise Time (Measured from 0.8 to 2 V, no load) LVCMOS/ LV TTL
Output
1500 ps
t
F
Output Fall Time (Measured from 2.0 V to 0.8 V, no load) LVCMOS/ LV
TTL Output
1500 ps
t
R
/ t
F
Input Rise time/ Fall time for LV CMOS/ LV TTL clock input [X1/CLK] 0 1500 ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification
limit values are applied individually under normal operating conditions and not valid simultaneously.
5. Measurement taken with outputs terminated with 50 W to V
DD
2 V. See Figure 2.
6. Sampled with 1000 cycles
7. Sampled with 10000 cycles

NB3N3020DTR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Phase Locked Loops - PLL LVPECL CLK MULTIPLR 3.3V
Lifecycle:
New from this manufacturer.
Delivery:
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