OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-FC420SA10

P1-P3P4-P6P7-P8
VS-FC420SA10
www.vishay.com
Vishay Semiconductors
Revision: 27-Sep-17
1
Document Number: 95793
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOT-227 Power Module
Single Switch - Power MOSFET, 420 A
FEATURES
•I
D
> 420 A, T
C
= 25 °C
• TrenchFET
®
power MOSFET
• Low input capacitance (C
iss)
• Reduced switching and conduction losses
• Ultra low gate charge (Q
g
)
• Avalanche energy rated (U
IS
)
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Notes
(1)
Maximum continuous current admitted 100 A to do not overcome the maximum temperature of terminals
(2)
Limited at maximum junction temperature
PRIMARY CHARACTERISTICS
V
DSS
100 V
R
DS(on)
0.0013
I
D
(1)
330 A at 90 °C
Type Modules - MOSFET
Package SOT-227
SOT-227
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
MOSFET
Drain to source voltage V
DSS
100 V
Continuous drain current, V
GS
at 10 V I
D
(1)
T
C
= 25 °C 435
AT
C
= 90 °C 330
Pulsed drain current I
DM
(2)
1130
Power dissipation P
D
T
C
= 25 °C 652 W
Gate to source voltage V
GS
± 20 V
Single pulse avalanche energy E
AS
T
C
= 25 °C, L = 10 mH, V
GS
= 10 V 11.5 J
Single pulse avalanche current I
AS
T
C
= 25 °C, L = 10 mH, V
GS
= 10 V 48 A
MODULE
Insulation voltage (RMS) V
ISOL
any terminal to case, t = 1 min 2500 V
Operating junction temperature range T
J
-55 to +175 °C
VS-FC420SA10
www.vishay.com
Vishay Semiconductors
Revision: 27-Sep-17
2
Document Number: 95793
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range T
J
, T
Stg
-55 - 175 °C
Junction to case MOSFET R
thJC
- - 0.23
°C/W
Case to heat sink Module R
thCS
Flat, greased surface - 0.1 -
Weight -30 - g
Mounting torque
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.8 (15.9) Nm (lbf.in)
Case style SOT-227
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 750 μA 100 - - V
Static drain to source on-resistance R
DS(on)
V
GS
= 10 V, I
D
= 200 A - 1.3 2.15 m
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 750 μA 2.2 2.9 3.8 V
Forward transconductance g
fs
V
DS
= 20 V, I
D
= 20 A, V
GS
= 10 V - 94 - S
Drain to source leakage current I
DSS
V
DS
= 100 V, V
GS
= 0 V - 0.6 4
μA
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 °C - 32 -
Gate to source leakage I
GSS
V
GS
= ± 20 V - - ± 350 nA
Total gate charge Q
g
I
D
= 200 A
V
DS
= 50 V
V
GS
= 10 V
- 375 -
nCGate to source charge Q
gs
-84 -
Gate to drain (“Miller”) charge Q
gd
- 138 -
Turn-on delay time t
d(on)
V
DD
= 50 V
I
D
= 100 A
R
g
= 1.2
V
GS
= 10 V
-45 -
ns
Rise time t
r
- 275 -
Turn-off delay time t
d(off)
- 152 -
Fall time t
f
- 172 -
Input capacitance C
iss
V
GS
= 0 V
V
DS
= 25 V
f = 1 MHz
- 17.3 -
nFOutput capacitance C
oss
-9.2 -
Reverse transfer capacitance C
rss
-0.9 -
SOURCE-DRAIN RATINGS AND CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Continuous source current (body diode) I
S
MOSFET symbol
showing the integral
reverse p-n junction
diode
- - 435
A
Pulsed source current (body diode) I
SM
- - 1130
Diode forward voltage V
SD
I
S
= 200 A, V
GS
= 0 V - 0.91 1.5 V
Reverse recovery time t
rr
T
J
= 25 °C, I
F
= I
S
= 50 A,
dI/dt = 100 A/μs, V
R
= 50 V
- 171 - ns
Reverse recovery charge Q
rr
- 740 - nC
Reverse recovery current I
RM
-8.7 - A
S
D
G
VS-FC420SA10
www.vishay.com
Vishay Semiconductors
Revision: 27-Sep-17
3
Document Number: 95793
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Continuous Drain Current vs. Case Temperature
Fig. 2 - Typical Drain to Source Current Output Characteristics
at T
J
= 25 °C
Fig. 3 - Typical Drain to Source Current Output Characteristics
at T
J
= 125 °C
Fig. 4 - Typical Drain-to-Source On-Resistance vs. Temperature
Fig. 5 - Typical Transfer Characteristics
Fig. 6 - Typical Gate Threshold Voltage Characteristics
0
20
40
60
80
100
120
140
160
180
0 50 100150200250300350400450500
Allowable Case Temperature (°C)
I
D
- Continuous Drain Current (A)
DC
0
50
100
150
200
250
300
350
400
012345
I
D
(A)
V
DS
(V)
V
GS
= 10 V thru 7 V
V
GS
= 5 V
0
50
100
150
200
250
300
350
400
0 0.10.20.30.40.50.60.70.80.9 1
I
D
(A)
V
DS
(V)
V
GS
= 10 V
V
GS
= 9 V
V
GS
= 8 V
V
GS
= 7 V
V
GS
= 6 V
V
GS
= 5 V
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
20 40 60 80 100 120 140 160 180
R
DS(on)
- Drain-to-Source
On-Resistance (mΩ)
T
J
(°C)
I
D
= 100 A
V
GS
= 10V
0
50
100
150
200
250
300
350
400
1234567
I
D
(A)
V
GS
(V)
T
J
= 25 °C
T
J
= 175 °C
V
DS
= 20 V
T
J
= 125 °C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.20.40.60.81.01.21.41.61.82.0
V
GSth
(V)
I
D
(mA)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
P1-P3P4-P6P7-P8

VS-FC420SA10

Mfr. #:
Buy VS-FC420SA10
Manufacturer:
Vishay / Siliconix
Description:
Discrete Semiconductor Modules 100V 435A Module SOT-227
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet