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VS-FC420SA10

P1-P3P4-P6P7-P8
VS-FC420SA10
www.vishay.com
Vishay Semiconductors
Revision: 27-Sep-17
4
Document Number: 95793
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Drain-State Resistance vs. Gate-to-Source Voltage
Fig. 8 - Typical Body Diode Source-to-Drain Current Characteristics
Fig. 9 - Typical Zero Gate Voltage Drain Current
Fig. 10 - Typical Turn off Switching Time vs. I
d
V
DD
= 50 V, R
g
= 1.2 , V
GS
= ± 10 V, L = 500 μH
Fig. 11 - Typical Turn-on Switching Time vs. I
d
V
DD
= 50 V, R
g
= 1.2 , V
GS
= ± 10 V, L = 500 μH
Fig. 12 - Power Dissipation Curve
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
5678910
R
DS(on)
(m
Ω
)
V
GS
(V)
I
D
= 100 A
T
J
=25 °C
0
50
100
150
200
250
300
350
400
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I
S
(A)
V
SD
(V)
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
0.0001
0.001
0.01
0.1
1
10
20 40 60 80 100
I
DSS
(mA)
V
DSS
(V)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
0
20
40
60
80
100
120
140
160
180
200
020406080100120
Turn-Off Time (ns)
I
D
(A)
t
f
at 25 °C
t
d(off)
at 125 °C
t
d(off)
at 25 °C
t
f
at 125 °C
0
30
60
90
120
150
180
210
240
270
300
020406080100120
Turn-On Time (ns)
I
D
(A)
t
r
at 25 °C
t
d(on)
at 125 °C
t
d(on)
at 25 °C
t
r
at 125 °C
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
0 25 50 75 100 125 150 175 200
P
D
- Power Dissipation (W)
T
J
(°C)
VS-FC420SA10
www.vishay.com
Vishay Semiconductors
Revision: 27-Sep-17
5
Document Number: 95793
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Maximum Thermal Impedance Junction-to-Case Characteristics
Fig. 14 - Safe Operating Area
ORDERING INFORMATION TABLE
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
t
1
- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.1
1
10
100
1000
0.1 1 10 100
BV
DSS
Limited
V
DS
- Drain-Source Voltage (V)
I
DS
- Drain-Source Current (A)
T
J
= 175 °C
T
C
= 25 °C
Single Pulse
Limited by R
DS (ON
)
t
p
= 100 μs
t
p
= 1 ms
t
p
=
500 μs
1
- MOSFET module
- Vishay Semiconductors product
2
- MOSFET die generation
3
- Current rating (420 = 420 A)
4
- Circuit configuration (S = single switch)
5
- Package indicator (SOT-227 standard insulated base)
6
- Voltage rating (10 = 100 V)
7
Device code
51 32 4 6 7
VS- F C 420 AS10
Quantity per tube is 10, M4 screw and washer included
VS-FC420SA10
www.vishay.com
Vishay Semiconductors
Revision: 27-Sep-17
6
Document Number: 95793
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Single switch S
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
P1-P3P4-P6P7-P8

VS-FC420SA10

Mfr. #:
Buy VS-FC420SA10
Manufacturer:
Vishay / Siliconix
Description:
Discrete Semiconductor Modules 100V 435A Module SOT-227
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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