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SPD11N10

P1-P3P4-P6P7-P8
2002-01-31
Page 4
SPD11N10
SPU11N10
Preliminary data
1 Power dissipation
P
tot
= f (T
C
)
0 20 40 60 80 100 120 140 160
°C
190
T
C
0
5
10
15
20
25
30
35
40
45
W
55
SPD11N10
P
tot
2 Drain current
I
D
= f (T
C
)
parameter: V
GS
10 V
0 20 40 60 80 100 120 140 160
°C
190
T
C
0
1
2
3
4
5
6
7
8
9
10
A
12
SPD11N10
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
C
= 25 °C
10
0
10
1
10
2
10
3
V
V
DS
-1
10
0
10
1
10
2
10
A
SPD11N10
I
D
R
D
S
(
o
n
)
=
V
D
S
/
I
D
DC
10 ms
1 ms
100 µs
10 µs
t
p
= 4.9µs
4 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPD11N10
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2002-01-31
Page 5
SPD11N10
SPU11N10
Preliminary data
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25°C
parameter: t
p
= 80 µs
0 2 4 6 8 10
V
13
V
DS
0
5
10
15
A
25
I
D
a
b
c
d
e
f
g
h
a= 5
b= 5.5
c= 6
d= 6.5
e= 7
f= 8
g= 9
h= 10
V
GS
[V]=
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0 4 8 12 16 20
A
28
I
D
0
50
100
150
200
250
300
m
400
R
DS(on)
a b c d
e f
g
h
a= 5
b= 5.5
c= 6
d= 6.5
V
GS
[
V]=
e= 7
f= 8
g= 9
h= 10
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 80 µs
0 1 2 3 4 5
V
7
V
GS
0
2
4
6
8
A
12
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
); T
j
=25°C
parameter: g
fs
0 1 2 3 4 5 6 7 8
A
10
I
D
0
1
2
3
4
5
S
7
g
fs
2002-01-31
Page 6
SPD11N10
SPU11N10
Preliminary data
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 7.8 A, V
GS
= 10 V
-60 -20 20 60 100 140
°C
200
T
j
0
50
100
150
200
250
300
350
400
450
500
550
600
m
750
SPD11N10
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
-65 -35 -5 25 55 85 115
°C
175
T
j
1.5
2
2.5
3
V
4
V
GS(th)
I
D
=1mA
I
D
=21µA
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0V, f=1 MHz
0 5 10 15 20 25 30
V
40
V
DS
1
10
2
10
3
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
, tp = 80 µs
0 0.4 0.8 1.2 1.6 2 2.4
V
3
V
SD
-1
10
0
10
1
10
2
10
A
SPD11N10
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 175 °C typ
T
j
= 175 °C (98%)
P1-P3P4-P6P7-P8

SPD11N10

Mfr. #:
Buy SPD11N10
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 10.5A DPAK-2
Lifecycle:
New from this manufacturer.
Delivery:
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