SPD11N10

2002-01-31
Page 7
SPD11N10
SPU11N10
Preliminary data
13 Typ. avalanche energy
E
AS
= f (T
j
)
par.: I
D
= 10.5 A , V
DD
= 25 V, R
GS
= 25
25 45 65 85 105 125 145
°C
185
T
j
0
5
10
15
20
25
30
35
40
45
50
mJ
60
E
AS
14 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: I
D
= 10.5 A pulsed
0 4 8 12 16
nC
24
Q
Gate
0
2
4
6
8
10
12
V
16
SPD11N10
V
GS
0,8 V
DS max
DS max
V
0,2
15 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60 -20 20 60 100 140
°C
200
T
j
90
92
94
96
98
100
102
104
106
108
110
112
114
V
120
SPD11N10
V
(BR)DSS
2002-01-31
Page 8
SPD11N10
SPU11N10
Preliminary data
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SPD11N10

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 10.5A DPAK-2
Lifecycle:
New from this manufacturer.
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