IXXK200N65B4

© 2014 IXYS CORPORATION, All Rights Reserved

XPT

TM

650V IGBT

GenX4

TM

IXXK200N65B4

IXXX200N65B4

V

CES

= 650V

I

C110

= 200A

V

CE(sat)











1.7V

t

fi(typ)

= 80ns

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 650 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 650 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Chip Capability) 480 A

I

LRMS

Lead Current Limit 160 A

I

C110

T

C

= 110°C 200 A

I

CM

T

C

= 25°C, 1ms 1100 A

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 1 I

CM

= 400 A

(RBSOA) Clamped Inductive Load @V

CE

 V

CES

t

sc

V

GE

= 15V, V

CE

= 360V, T

J

= 150°C 10 μs

(SCSOA) R

G

= 10, Non Repetitive

P

C

T

C

= 25°C 1630 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque (TO-264) 1.13/10 Nm/lb.in

F

C

Mounting Force (PLUS247) 20..120 /4.5..27 N/lb

Weight TO-264 10 g

PLUS247 6 g

DS100518C(6/14)

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 650 V

V

GE(th)

I

C

= 4mA, V

CE

= V

GE

4.0 6.5 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 25 μA

T

J

= 150°C 2 mA

I

GES

V

CE

= 0V, V

GE

= ±20V ±200 nA

V

CE(sat)

I

C

= 160A, V

GE

= 15V, Note 1 1.4 1.7 V

T

J

= 150°C 1.6 V

G = Gate E = Emitter

C = Collector Tab = Collector

TO-264 (IXXK)

E

G

C

PLUS247 (IXXX)

G

Tab

Tab

E

C

G

Features



Optimized for 10-30kHz Switching



Square RBSOA



Short Circuit Capability



International Standard Packages



High Current Handling Capability

Advantages



High Power Density



Low Gate Drive Requirement

Applications



Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts

Extreme Light Punch Through

IGBT for 10-30kHz Switching

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXK200N65B4

IXXX200N65B4

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 54 90 S

C

ies

11.25 nF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 670 pF

C

res

390 pF

Q

g(on)

553 nC

Q

ge

I

C

= 200A, V

GE

= 15V, V

CE

= 0.5 • V

CES

110 nC

Q

gc

253 nC

t

d(on)

62 ns

t

ri

76 ns

E

on

4.40 mJ

t

d(off)

245 ns

t

fi

80 ns

E

off

2.20 3.50 mJ

t

d(on)

54 ns

t

ri

65 ns

E

on

5.55 mJ

t

d(off)

236 ns

t

fi

110 ns

E

off

2.54 mJ

R

thJC

0.092 °C/W

R

thCS

0.15 °C/W

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Inductive load, T

J

= 150°C

I

C

= 100A, V

GE

= 15V

V

CE

= 400V, R

G

= 1

Note 2

Inductive load, T

J

= 25°C

I

C

= 100A, V

GE

= 15V

V

CE

= 400V, R

G

= 1

Note 2

TO-264 Outline

Terminals: 1 = Gate

2,4 = Collector

3 = Emitter

PLUS247

TM

Outline

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Terminals: 1 - Gate

2,4 - Collector

3 - Emitter

© 2014 IXYS CORPORATION, All Rights Reserved

IXXK200N65B4

IXXX200N65B4

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

00.511.522.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

11V

8V

9V

7V

10V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

350

012345678910

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

11V

10V

8V

9V

7V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

50

100

150

200

250

300

00.511.522.53

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

11V

10V

8V

9V

7V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 200A

I

C

= 100A

I

C

= 300A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1.0

1.5

2.0

2.5

3.0

3.5

4.0

7 8 9 101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 300A

T

J

= 25ºC

200A

100A

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

180

200

5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

T

J

= 150ºC

IXXK200N65B4

Mfr. #:

Buy IXXK200N65B4

Manufacturer:

Littelfuse

Description:

IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT

Lifecycle:

New from this manufacturer.

Delivery:

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Payment:

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