OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXXK200N65B4

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK200N65B4
IXXX200N65B4
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse W idth - Seconds
Z
(th)JC
- ºC / W
Fig. 11. Maximum Transient Thermal Impedance
aaaa
0.2
Fig. 7. Transconductance
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
50
100
150
200
250
300
350
400
450
100 200 300 400 500 600 700
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 1
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400 450 500 550
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 325V
I
C
= 200A
I
G
= 10mA
Fig. 9. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
ies
C
oes
C
res
© 2014 IXYS CORPORATION, All Rights Reserved
IXXK200N65B4
IXXX200N65B4
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
1
2
3
4
5
6
7
12345678910
R
G
- Ohms
E
off
- MilliJoules
1
3
5
7
9
11
13
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 50A
I
C
= 100A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
80
100
120
140
160
180
200
220
240
12345678910
R
G
- Ohms
t
f i
- Nanoseconds
100
200
300
400
500
600
700
800
900
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 100A
I
C
= 50A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.5
1.0
1.5
2.0
2.5
3.0
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
E
off
- MilliJoules
1
2
3
4
5
6
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1
Ω
,
V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1
Ω
,
V
GE
= 15V
V
CE
= 400V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
20
40
60
80
100
120
140
160
180
200
220
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
f i
- Nanoseconds
230
235
240
245
250
255
260
265
270
275
280
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
60
80
100
120
140
160
180
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanosecond
s
200
220
240
260
280
300
320
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 100A
I
C
= 50A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK200N65B4
IXXX200N65B4
IXYS REF: IXX_200N65B4(F9)3-04-14-A
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
10
20
30
40
50
60
70
80
90
100
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
r i
- Nanosecond
s
44
46
48
50
52
54
56
58
60
62
64
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC
T
J
= 150ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
10
30
50
70
90
110
130
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanosecond
s
40
45
50
55
60
65
70
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 100A
I
C
= 50A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
180
200
12345678910
R
G
- Ohms
t
r i
- Nanosecond
s
30
40
50
60
70
80
90
100
110
120
130
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 50A
I
C
= 100A
P1-P3P4-P6

IXXK200N65B4

Mfr. #:
Buy IXXK200N65B4
Manufacturer:
Littelfuse
Description:
IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet