QSZ4TR Datasheet QSZ4TR | P1-P3

QSZ4

Transistors

Rev.B 1/4

General purpose transistor

(isolated transistor and diode)

QSZ4

A 2SB1706 and a 2SD2671 are housed independently in a TSMT5 package.

zApplications

DC / DC converter

Motor driver

zFeatures

1) Low V

CE(sat)

2) Small package

zStructure

Silicon epitaxial planar transistor

zEquivalent circuit

Tr2Tr1

(4)(5)

(2) (3)(1)

zPackaging specifications

Type QSZ4

TSMT5

Z04

TR

3000

Package

Marking

Code

Basic ordering unit(pieces)

zDimensions (Unit : mm)

ROHM : TSMT5

QSZ4

Abbreviated symbol : Z04

Each lead has same dimensions

(5) (4)

(1) (2) (3)

QSZ4

Transistors

Rev.B 2/4

zAbsolute maximum ratings (Ta=25°C)

Tr1

Parameter Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

Pc

Tj

Tstg

Limits

−30

−6

−2

500

150

−55 to +150

−4

∗2

∗3

∗1

Unit

V

A

mW/Total

1.25 W/Total

0.9 W/Element

°C

∗1 Single pulse, Pw=1ms.

∗2 Each terminal mounted on a recommended land.

∗3 Mounted on a 25×25×

t

0.8mm ceramic substrate.

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

Tr 2

Parameter Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

Pc

Tj

Tstg

Limits

30

6

2

500

150

−55 to +150

4

∗2

∗3

∗1

Unit

V

A

mW/Total

1.25 W/Total

0.9 W/Element

°C

∗1 Single pulse, Pw=1ms.

∗2 Each terminal mounted on a recommended land.

∗3 Mounted on a 25×25×

t

0.8mm ceramic substrate.

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

zElectrical characteristics (Ta=25°C)

Tr1

Parameter Symbol Min. Typ. Max. Unit Conditions

V

CB

= −10V, I

E

=0A, f=1MHz

f

T

−

280

−

MHz

V

CE

= −2V, I

E

=200mA, f=100MHz

BV

CBO

−30

−−

V

I

C

= −10µA

BV

CEO

−30

−−

V

I

C

= −1mA

BV

EBO

−6

−−

V

I

E

= −10µA

I

CBO

−−

−100

nA V

CB

= −30V

I

EBO

−−

−100

nA V

EB

= −6V

V

CE(sat)

−−180

−370 mV

I

C

= −1.5A, I

B

= −75mA

h

FE

270 − 680

− V

CE

= −2V, I

C

= −200mA

Cob − 20 −

pF

∗

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current gain

Transition frequency

Collector output capacitance

∗ Pulsed

Tr 2

Parameter Symbol Min. Typ. Max. Unit Conditions

V

CB

=10V, I

E

=0A, f=1MHz

f

T

−

280

−

MHz

V

CE

=2V, I

E

= −200mA, f=100MHz

BV

CBO

30

−−

V

I

C

=10µA

BV

CEO

30

−−

V

I

C

=1mA

BV

EBO

6

−−

V

I

E

=10µA

I

CBO

−−

100

nA V

CB

=30V

I

EBO

−−

100

nA V

EB

=6V

V

CE(sat)

− 180

370 mV

I

C

=1.5A, I

B

=75mA

h

FE

270 − 680

− V

CE

=2V, I

C

=200mA

Cob − 20 −

pF

∗

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current gain

Transition frequency

Collector output capacitance

∗ Pulsed

QSZ4

Transistors

Rev.B 3/4

zElectrical characteristic curves

Tr1(PNP)

Fig.1 DV current gain

vs. collector current

10

100

1000

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : I

C

(A)

DC CURRENT GAIN : h

FE

VCE= −2V

Pulsed

Ta=100 C

Ta =−40 C

Ta=25 C

0.01

0.1

1

10

0.001 0.01 0.1 1

10

COLLECTOR CURRENT : IC (A)

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

Fig.2 Collector-emitter saturation voltage

vs. collector current

IC/IB=20/1

Pulsed

Ta=25 C

Ta =−40 C

Ta=100 C

0.1

1

10

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A)

BASE SATURATION VOLTAGE : V

BE(sat)

(V)

Fig.3 Base-emitter saturation voltage

vs. collectir current

Ta=25 C

Pulsed

I

C

/I

B

=20/1

I

C

/I

B

=50/1

I

C

/I

B

=10/1

0.1

1

10

0.01

BASE TO EMITTER CURRENT : VBE (V)

COLLECTOR CURRENT :IC (A)

0.1 1 10

Fig.4 Grounded emitter propagation

characteristics

V

BE

=2V

Pulsed

Ta=100 C

Ta=25 C

Ta =−40 C

10

100

1000

0.01 0.1 1 10

EMITTER CURRENT : IE (A)

TRANSITION FREQUENCY : fT (MHz)

Ta=25 C

VCE= −2V

f=100MHz

Fig.5 Gain bandwidth product

vs. emitter curent

COLLECTOR CURRENT : I

C

(A)

SWITCHINGTIME : (ns)

Fig.6 Switching time

Ta=25 C

V

CE

= −12V

I

C

/I

B

=20/1

Pulsed

0.01

0.1 1

10

1

10

100

1000

10000

tstg

tdon

tf

tr

100

1000

1

10

EMITTER TO BASE VOLTAGE : V

BE

(V)

COLLECTOR TO BASE VOLTAGE : V

CB

(V)

COLLECTOR CURRENT :I

C

(A)

0.001 0.1 1000.01 1 10

Fig.7 Collector output capacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

Cib

Cob

IC=0A

f=1MHz

Ta=25 C

QSZ4TR

QSZ4TR

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