QSZ4TR

QSZ4
Transistors
Rev.B 4/4
Tr2(NPN)
Fig.8 DC current gain
vs. collector current
10
100
1000
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
VCE=2V
Pulsed
Ta=125 C
Ta=25 C
Ta =25 C
Fig.9 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.01
0.1
1
10
0.001 0.01 0.1 1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
IC/IB=20/1
Pulsed
Ta=125 C
Ta=25 C
Ta =25 C
0.1
1
10
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
IC/IB=20/1
Pulsed
Ta=125 C
Ta=25 C
Ta =25 C
Fig.10 Base-emitter saturation voltage
vs. collector current
Fig.11 Grounded emitter propagation
characteristics
BASE TO EMITTER CURRENT : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
0.001
0.01
0.1
1
10
0 1.4
0.2
0.4
0.6 0.8
1
1.2
VCE=2V
Pulsed
Ta=125 C
Ta=25 C
Ta =25 C
Fig.12 Gain bandwidth product
vs. emitter current
10
100
1000
0.01 0.1 1 10
EMITTER CURRENT : I
E
(A)
TRANSITION FREQUENCY : fT (MHz)
Ta=25 C
VCE=2V
f= 100MHz
Fig.13 Collector output chapacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
100
1000
0.001 0.01 0.1 1 10 100
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
IC=0A
f=1MHz
Ta=25 C
Cob
Cib
Notes
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Application circuit diagrams and circuit constants contained herein are shown as examples of standard
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and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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Products listed in this document are no antiradiation design.
Appendix1-Rev2.0
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Appendix

QSZ4TR

Mfr. #:
Manufacturer:
Description:
Bipolar Transistors - BJT ISO TRANSISTORDIODE GEN PURP
Lifecycle:
New from this manufacturer.
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