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NTD70N03R-1G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 10
1 Publication Order Number:
NTD70N03R/D
NTD70N03R
Power MOSFET
72 A, 25 V, N-Channel DPAK
Features
•Planar HD3e Process for Fast Switching Performance
•Low R
DS(on)
to Minimize Conduction Loss
•Low C
ISS
to Minimize Driver Loss
•Low Gate Charge
•Pb-Free Packages are Available
MAXIMUM RATINGS (T
J
= 25°C Unless otherwise specified)
Parameter Symbol Value Unit
Drain-to-Source Voltage V
DSS
25 V
dc
Gate-to-Source Voltage - Continuous V
GS
±20 V
dc
Thermal Resistance - Junction-to-Case
Total Power Dissipation @ T
C
= 25°C
Drain Current
- Continuous @ T
C
= 25°C, Chip
- Continuous @ T
C
= 25°C, Limited by Package
- Continuous @ T
A
= 25°C, Limited by Wires
- Single Pulse (t
p
= 10 ms)
R
q
JC
P
D
I
D
I
D
I
D
I
DM
2.4
62.5
72.0
62.8
32
140
°C/W
W
A
A
A
A
Thermal Resistance - Junction-to-Ambient
(Note 1 )
Total Power Dissipation @ T
A
= 25°C
Drain Current - Continuous @ T
A
= 25°C
R
q
JA
P
D
I
D
80
1.87
12.0
°C/W
W
A
Thermal Resistance - Junction-to-Ambient
(Note 2 )
Total Power Dissipation @ T
A
= 25°C
Drain Current - Continuous @ T
A
= 25°C
R
q
JA
P
D
I
D
110
1.36
10.0
°C/W
W
A
Operating and Storage Temperature Range T
J
, T
stg
-55 to
175
°C
Single Pulse Drain-to-Source Avalanche
Energy - Starting T
J
= 25°C
(V
DD
= 30 V
dc
, V
GS
= 10 V
dc
, I
L
= 12 A
pk
,
L = 1 mH, R
G
= 25 W)
E
AS
71.7 mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 s
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq. in. pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
http://onsemi.com
D
S
G
N-Channel
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAMS
70N03 = Device Code
Y = Year
WW = Work Week
G = Pb-Free Package
YWW
T70
N03G
1
2
3
4
YWW
T70
N03G
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
STYLE 2
1
2
3
4
25 V
5.6 mW
R
DS(on)
TYP
72 A
I
D
MAXV
(BR)DSS
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
NTD70N03R
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C Unless otherwise specified)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 3)
(V
GS
= 0 V
dc
, I
D
= 250 mA
dc
)
Temperature Coefficient (Positive)
V
(br)DSS
25
-
28
20.5
-
-
V
dc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 20 V
dc
, V
GS
= 0 V
dc
)
(V
DS
= 20 V
dc
, V
GS
= 0 V
dc
, T
J
= 150°C)
I
DSS
-
-
-
-
1.5
10
mA
dc
Gate-Body Leakage Current
(V
GS
= ±20 V
dc
, V
DS
= 0 V
dc
)
I
GSS
- - ±100
nA
dc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 mA
dc
)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
-
1.5
4.0
2.0
-
V
dc
mV/°C
Static Drain-to-Source On-Resistance (Note 3)
(V
GS
= 4.5 V
dc
, I
D
= 20 A
dc
)
(V
GS
= 10 V
dc
, I
D
= 20 A
dc
)
R
DS(on)
-
-
8.1
5.6
13
8.0
mW
Forward Transconductance (Note 3)
(V
DS
= 10 V
dc
, I
D
= 15 A
dc
)
g
FS
- 27 -
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 20 V
dc
, V
GS
= 0 V,
f = 1 MHz)
C
ISS
- 1333 -
pF
Output Capacitance C
OSS
- 600 -
Transfer Capacitance C
RSS
- 218 -
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
(V
GS
= 10 V
dc
, V
DD
= 10 V
dc
,
I
D
= 36 A
dc
, R
G
= 3 W)
t
d(on)
- 6.9 -
ns
Rise Time t
r
- 1.3 -
Turn-Off Delay Time t
d(off)
- 18.4 -
Fall Time t
f
- 5.5 -
Gate Charge
(V
GS
= 5 V
dc
, I
D
= 36 A
dc
,
V
DS
= 10 V
dc
) (Note 3)
Q
T
- 13.2 -
nC
Q
GS
- 3.3 -
Q
DS
- 6.5 -
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(I
S
= 20 A
dc
, V
GS
= 0 V
dc
) (Note 3)
(I
S
= 20 A
dc
, V
GS
= 0 V
dc
, T
J
= 125°C)
V
SD
-
-
0.86
0.73
1.2
-
V
dc
Reverse Recovery Time
(I
S
= 36 A
dc
, V
GS
= 0 V
dc
,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
- 27.9 -
ns
t
a
- 14.8 -
t
b
- 13.1 -
Reverse Recovery Stored
Charge
Q
RR
- 19 - nC
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD70N03R
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
10 V
10
0.016
7050
0.012
0.004
0
30 110 150
1.6
1.2
1.4
1.0
0.8
0.6
10,000
1,000,000
010
50
42
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
2
0.04
86
0.02
0.01
0
410
Figure 3. On-Resistance versus
Gate-to-Source Voltage
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain-to-Source Leakage Current
versus Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
175
-50 50250-25 75 125100
2
01510 255
6
25
75
V
DS
≥ 10 V
T
J
= 25°C
T
J
= -55°C
T
J
= 175°C
V
GS
= 10 V
175
V
GS
= 0 V
I
D
= 36 A
V
GS
= 10 V
100
0.05
T
J
= 100°C
T
J
= 175°C
50
0
150
25
75
4
T
J
= 25°C
T
J
= -55°C
20
10
8 V
4 V
6 V
3.8 V
5 V
4.5 V
2.0
8
1000
8
125
150
3 V
0
100
125
0.03
T
J
= 175°C
90
0.008
130
I
D
= 72 A
T
J
= 25°C
1.8
150
100
100,000
6
4.2 V
3.6 V
3.4 V
3.2 V
2.8 V
2.6 V
2.4 V
T
J
= 25°C
P1-P3P4-P6P7-P7

NTD70N03R-1G

Mfr. #:
Buy NTD70N03R-1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 25V 75A N-Channel
Lifecycle:
New from this manufacturer.
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