NTD70N03R
http://onsemi.com
4
10 0 10 15 20
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
3000
1000
0
V
GS
V
DS
1500
500
55
V
GS
= 0 VV
DS
= 0 V
T
J
= 25°C
C
ISS
C
OSS
C
RSS
2000
2500
C
RSS
C
ISS
Figure 8. Gate-To-Source and Drain-To-Source
Voltage versus Total Charge
030
8
2
0
Q
G
, TOTAL GATE CHARGE (nC)
V
GS,
GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
= 36 A
T
J
= 25°C
10
4
6
Q
GD
10
V
DD
= 10 V
QT
Q
GS
20
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1 10 100
1000
1
t, TIME (ns)
100
t
r
t
d(off)
t
d(on)
t
f
10
V
DS
= 10 V
I
D
= 36 A
V
GS
= 10 V
80
0
0.4
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25°C
Figure 10. Diode Forward Voltage versus Current
0.6 0.8 1.6
10
20
30
1.0 1.2
40
60
50
70
1.4
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1
100
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
10 ms
80
0
0
Tmb (°C)
Ider (%)
Figure 12. Normalized Continuous Drain Current
as a function of Mounting Base Temperature
50 200100
40
120
150
