IRF7807ATRPBF Datasheet IRF7807TRPBF, IRF7807ATRPBF, IRF7807APBF | P1-P3

Parameter Symbol IRF7807 IRF7807A Units

Drain-Source Voltage V

30 V

Gate-Source Voltage V

±12

Continuous Drain or Source 25°C I

8.3 8.3 A

Current (V

≥ 4.5V) 70°C 6.6 6.6

Pulsed Drain Current I

66 66

Power Dissipation 25°C P

2.5 W

70°C 1.6

Junction & Storage Temperature Range T

STG

–55 to 150 °C

Continuous Source Current (Body Diode) I

2.5 2.5 A

Pulsed source Current I

66 66

• N Channel Application Specific MOSFETs

• Ideal for Mobile DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Lead-Free

Description

These new devices employ advanced HEXFET

Power MOSFET technology to achieve an

unprecedented balance of on-resistance and gate

charge. The reduced conduction and switching losses

make them ideal for high efficiency DC-DC

Converters that power the latest generation of mobile

microprocessors.

A pair of IRF7807 devices provides the best cost/

performance solution for system voltages, such as 3.3V

and 5V.

HEXFET

Chip-Set for DC-DC Converters

Absolute Maximum Ratings

Parameter Max. Units

Maximum Junction-to-Ambient R

θJA

50 °C/W

Thermal Resistance

Top View

IRF7807PbF

IRF7807APbF

www.irf.com 1

09/22/04

SO-8

IRF7807 IRF7807A

Vds 30V 30V

Rds(on) 25mΩ 25mΩ

Qg 17nC 17nC

Qsw 5.2nC

Qoss 16.8nC 16.8nC

Device Features

PD – 95290

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IRF7807/APbF

Parameter Min Typ Max Min Typ Max Units Conditions

Diode Forward V

1.2 1.2 V I

= 7A, V

= 0V

Voltage*

Reverse Recovery Q

80 80 nC di/dt = 700A/µs

Charge V

= 16V, V

= 0V, I

= 7A

Reverse Recovery Q

rr(s)

50 50

Charge (with Parallel

Schotkky)

Parameter Min Typ Max Min Typ Max Units Conditions

Drain-to-Source V

(BR)DSS

30 – – 30 – – V V

= 0V, I

= 250µA

Breakdown Voltage*

Static Drain-Source R

(on) 17 25 17 25 mΩ V

= 4.5V, I

= 7A

on Resistance*

Gate Threshold Voltage* V

(th) 1.0 1.0 V V

= V

, I

= 250µA

Drain-Source Leakage I

DSS

30 30 µA V

= 24V, V

= 0

150 150 V

= 24V, V

= 0,

Tj = 100°C

Gate-Source Leakage I

GSS

±100 ±100 nA V

= ±12V

Current*

Total Gate Charge* Q

12 17 12 17 V

= 5V, I

= 7A

Pre-Vth Q

gs1

2.1 2.1 V

= 16V, I

= 7A

Gate-Source Charge

Post-Vth Q

gs2

0.76 0.76 nC

Gate-Source Charge

Gate to Drain Charge Q

2.9 2.9

Switch Charge* Q

3.66 5.2 3.66

gs2

+ Q

)

Output Charge* Q

oss

14 16.8 14 16.8 V

= 16V, V

= 0

Gate Resistance R

1.2 1.2 Ω

Turn-on Delay Time t

(on) 12 12 V

= 16V

Rise Time t

17 17 ns I

= 7A

Turn-off Delay Time t

(off) 25 25 R

= 2Ω

Fall Time t

66V

= 4.5V

Resistive Load

Electrical Characteristics

Source-Drain Rating & Characteristics

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Pulse width ≤ 300 µs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board, t < 10 sec.

 Typ = measured - Q

oss

* Devices are 100% tested to these parameters.

IRF7807 IRF7807A

Current*

di/dt = 700A/µs

(with 10BQ040)

= 16V, V

= 0V, I

= 7A

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IRF7807/APbF

Control FET

Special attention has been given to the power losses

in the switching elements of the circuit - Q1 and Q2.

Power losses in the high side switch Q1, also called the

Control FET, are impacted by the R

ds(on)

of the MOSFET,

but these conduction losses are only about one half of

the total losses.

Power losses in the control switch Q1 are given by;

loss

= P

conduction

+ P

switching

+ P

drive

+ P

output

This can be expanded and approximated by;

loss

= I

rms

× R

ds(on)

()

+ I ×

× V

× f

⎛

⎝

⎜

⎞

⎠

⎟

+ I ×

gs2

× V

× f

⎛

⎝

⎜

⎞

⎠

⎟

+ Q

× V

× f

()

oss

×V

× f

⎛

⎝

⎞

⎠

This simplified loss equation includes the terms Q

gs2

and Q

oss

which are new to Power MOSFET data sheets.

gs2

is a sub element of traditional gate-source charge

that is included in all MOSFET data sheets. The impor-

tance of splitting this gate-source charge into two sub

elements, Q

gs1

and Q

gs2

, can be seen from Fig 1.

gs2

indicates the charge that must be supplied by

the gate driver between the time that the threshold volt-

age has been reached (t1) and the time the drain cur-

rent rises to I

dmax

(t2) at which time the drain voltage

begins to change. Minimizing Q

gs2

is a critical factor in

reducing switching losses in Q1.

oss

is the charge that must be supplied to the output

capacitance of the MOSFET during every switching

cycle. Figure 2 shows how Q

oss

is formed by the paral-

lel combination of the voltage dependant (non-linear)

capacitance’s C

and C

when multiplied by the power

supply input buss voltage.

Figure 1: Typical MOSFET switching waveform

Synchronous FET

The power loss equation for Q2 is approximated

by;

loss

= P

conduction

+ P

drive

+ P

output

loss

= I

rms

× R

ds(on)()

+ Q

× V

× f

()

oss

×V

× f

⎛

⎝

⎜

⎞

⎠

+ Q

× V

(

)

*dissipated primarily in Q1.

Power MOSFET Selection for DC/DC

Converters

Drain Current

Gate Voltag

Drain Voltage

GTH

GS1

GS2

P1-P3 P4-P6 P7-P8

IRF7807ATRPBF

Mfr. #:

Buy IRF7807ATRPBF

Manufacturer:

Infineon / IR

Description:

MOSFET MOSFT 30V 6.6A 25mOhm 12nC

Lifecycle:

New from this manufacturer.

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IRF7807ATRPBF

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