IXTH04N300P3HV Datasheet IXTH04N300P3HV | P1-P3

DS100638(12/14)

High Voltage

Power MOSFET

N-Channel Enhancement Mode

Features



High Blocking Voltage



High Voltage Package

Advantages



Easy to Mount



Space Savings



High Power Density

Applications



High Voltage Power Supplies



Capacitor Discharge Applications



Pulse Circuits



Laser and X-Ray Generation Systems

IXTH04N300P3HV

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25C to 150C 3000 V

V

DGR

T

J

= 25C to 150C, R

GS

= 1M 3000 V

V

GSS

Continuous 20 V

V

GSM

Transient 30 V

I

D25

T

C

= 25C 0.40 A

I

D110

T

C

= 110C 0.24 A

I

DM

T

C

= 25C, Pulse Width Limited by T

JM

0.80 A

P

D

T

C

= 25C 104 W

T

J

- 55 ... +150 C

T

JM

150 C

T

stg

- 55 ... +150 C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque 1.13/10 Nm/lb.in

Weight 6 g

V

DSS

= 3000V

I

D25

= 0.40A

R

DS(on)





190





Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250A 3000 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250A 2.0 4.0 V

I

GSS

V

GS

= 20V, V

DS

= 0V 100 nA

I

DSS

V

DS

= 0.8 • V

DSS

,

V

GS

= 0V 10 A

T

J

= 125C 250A

R

DS(on)

V

GS

= 10V, I

D

= 0.20A, Note 1 190 

G = Gate D = Drain

S = Source Tab = Drain

TO-247HV

D (Tab)

G

S

D

Advance Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH04N300P3HV

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 60V, I

D

= 0.20A, Note 1 0.17 0.28 S

C

iss

283 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 18 pF

C

rss

5 pF

t

d(on)

12 ns

t

r

20 ns

t

d(off)

35 ns

t

f

26 ns

Q

g(on)

13.0 nC

Q

gs

V

GS

= 10V, V

DS

= 1.5kV, I

D

= 0.5 • I

D25

1.0 nC

Q

gd

8.7 nC

R

thJC

1.2 C/W

R

thCS

0.21 C/W

Note: 1. Pulse test, t  300s, duty cycle, d  2%.

Resistive Switching Times

V

GS

= 10V, V

DS

= 50V, I

D

= 0.40A

R

G

= 10 (External)

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max

I

S

V

GS

= 0V, Note1 0.4 A

I

SM

Repetitive, pulse Width Limited by T

JM

1.6 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.5 V

t

rr

1.1 μs

Q

RM

6.2 C

I

RM

11.2 A

I

F

= 0.4A, -di/dt = 100A/μs

V

R

= 100V

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

TO-247HV (IXTH) Outline

E

R

A

Q

S

A3

e

D

c

b

A1

L1

D3

D1

D2

E2

E3

3X

2X

4X

3X

A2

b1

0P

E1

0P1

4

31 2

e1

L

PINS:

1 - Gate 2 - Source

3, 4 - Drain

IXTH04N300P3HV

Fig. 2. Output Characteristics @ T

J

= 125ºC

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0 40 80 120 160 200 240 280 320

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

4V

5V

6V

Fig. 3. R

DS(on)

Normalized to I

D

= 0.2A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 0.2A

I

D

= 0.4A

Fig. 4. R

DS(on)

Normalized to I

D

= 0.2A Value vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 1. Output Characteristics @ T

J

= 25ºC

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 50 100 150 200 250

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

5V

6V

7V

4V

Fig. 6. Input Admittance

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 5. Maximum Drain Current vs.

Case Temperature

0.0

0.1

0.2

0.3

0.4

0.5

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXTH04N300P3HV

IXTH04N300P3HV

Products related to this Datasheet