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IXTH04N300P3HV

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH04N300P3HV
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 11. Maximum Transient Thermal Impedance
aaaa
3
Fig. 7. Transconductance
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
024681012
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 1500V
I
D
= 0.2A
I
G
= 1mA
Fig. 10. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
iss
Crss
C
oss
© 2014 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_04N300P3HV(M3) 11-25-14
IXTH04N300P3HV
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 75ºC
0.01
0.1
1
100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
100ms
1ms
100µs
R
DS(on)
Limi
t
10ms
DC
Fig. 12. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
0.01
0.1
1
100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100ms
1ms
100µs
R
DS(on)
Limi
t
10ms
DC
25µs
P1-P3P4-P5

IXTH04N300P3HV

Mfr. #:
Buy IXTH04N300P3HV
Manufacturer:
Littelfuse
Description:
MOSFET DISC MOSFET N-CH STD-POLAR3
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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