IXFT400N075T2 Datasheet IXFH400N075T2, IXFT400N075T2 | P1-P3

DS100221(12/09)

IXFH400N075T2

IXFT400N075T2

TrenchT2

TM

HiperFET

TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 175°C75 V

V

DGR

T

J

= 25°C to 175°C, R

GS

= 1MΩ 75 V

V

GSS

Continuous ± 20 V

V

GSM

Transient ± 30 V

I

D25

T

C

= 25°C (Chip Capability) 400 A

I

LRMS

Lead Current Limit, RMS 160 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

1000 A

I

A

T

C

= 25°C 200 A

E

AS

T

C

= 25°C 1.5 J

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 175°C 15 V/ns

P

D

T

C

= 25°C 1000 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

1.6mm (0.062in.) from Case for 10s 300 °C

T

sold

Plastic Body for 10 seconds 260 °C

M

d

Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 75 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250μA 2.0 4.0 V

I

GSS

V

GS

= ± 20V, V

DS

= 0V ±200 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 25 μA

T

J

= 150°C 1.5 mA

R

DS(on)

V

GS

= 10V, I

D

= 100A, Notes 1 & 2 2.3 mΩ

V

DSS

= 75V

I

D25

= 400A

R

DS(on)

≤≤

≤

2.3m

ΩΩ

Ω

Features

z

International Standard Packages

z

175°C Operating Temperature

z

High Current Handling Capability

z

Avalanche Rated

z

Fast Intrinsic Diode

z

Low R

DS(on)

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

DC/DC Converters and Off-line UPS

z

Primary- Side Switch

z

High Current Switching Applications

Advance Technical Information

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXFH)

TO-268 (IXFT)

G

S

D (Tab)

S

G

D (Tab)

D

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFH400N075T2

IXFT400N075T2

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Includes lead resistance.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 60A, Note 1 80 130 S

C

iss

24 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 2770 pF

C

rss

455 pF

R

Gi

Gate Input Resistance 1.33 Ω

t

d(on)

35 ns

t

r

20 ns

t

d(off)

67 ns

t

f

44 ns

Q

g(on)

420 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

114 nC

Q

gd

130 nC

R

thJC

0.15 °C/W

R

thCH

TO-247 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 400 A

I

SM

Repetitive, Pulse Width Limited by T

JM

1200 A

V

SD

I

F

= 100A, V

GS

= 0V, Note 1 1.2 V

t

rr

77 ns

I

RM

5.4

A

Q

RM

210 nC

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 200A

R

G

= 1Ω (External)

I

F

= 100A, V

GS

= 0V

-di/dt = 100A/μs

V

R

= 37.5V

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

e

∅ P

TO-247 (IXFH) Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-268 (IXFT) Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

IXFH400N075T2

IXFT400N075T2

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

350

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

8V

5V

6V

7V

4V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

50

100

150

200

250

300

350

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

8V

7V

5

V

6

V

4

V

Fig. 4. R

DS(on)

Normalized to I

D

= 200A Value

vs. Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 400A

I

D

= 200A

Fig. 5. R

DS(on)

Normalized to I

D

= 200A

vs. Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0 50 100 150 200 250 300 350 400

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

20

40

60

80

100

120

140

160

180

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current limit

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

350

400

0.0 0.5 1.0 1.5 2.0 2.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

8V

4V

5V

6V

7V

IXFT400N075T2

IXFT400N075T2

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