© 2009 IXYS CORPORATION, All Rights Reserved
IXFH400N075T2
IXFT400N075T2
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
0
10
20
30
40
50
60
70
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 1 , V
GS
= 10V
V
DS
= 37.5V
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
100
200
300
400
500
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R
G
- Ohms
t
r
- Nanoseconds
20
40
60
80
100
120
t
d
on
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 37.5V
I
D
= 100A
I
D
= 200A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
20
25
30
35
40
45
50
55
60
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
60
65
70
75
80
85
90
95
100
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 37.5V
I
D
= 100A
I
D
= 200A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
20
25
30
35
40
45
50
55
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
50
60
70
80
90
100
110
120
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 37.5V
T
J
= 25ºC, 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
0
10
20
30
40
50
60
70
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 37.5V
I
D
= 200A
I
D
= 100A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
0
100
200
300
400
500
600
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R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
t
d
off
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 37.5V
I
D
= 200A, 100A