APTM50DHM38G Datasheet APTM50DHM38G | P1-P3

APTM50DHM38G

APTM50DHM38G – Rev 3 July, 2006

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G1

S1

S4

G4

CR3

VBUS

OUT2

0/VBUS

Q4

OUT1

CR2

Q1

S4

G4

VBUS 0/VBUS

S1

G1

OUT1

OUT2

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

S

ymbol Parameter Max ratings Unit

V

DSS

Drain - Source Breakdown Voltage 500 V

T

c

= 25°C 90

I

D

Continuous Drain Current

T

c

= 80°C 67

I

DM

Pulsed Drain current 360

A

V

GS

Gate - Source Voltage ±30 V

R

DSon

Drain - Source ON Resistance 45

mΩ

P

D

Maximum Power Dissipation T

c

= 25°C 694 W

I

AR

Avalanche current (repetitive and non repetitive) 46 A

E

AR

Repetitive Avalanche Energy 50

E

AS

Single Pulse Avalanche Energy 2500

mJ

V

DSS

= 500V

R

DSon

= 38mΩ typ @ Tj = 25°C

I

D

= 90A @ Tc = 25°C

Applicatio

n

• Welding converters

• Switched Mode Power Supplies

• Switched Reluctance Motor Drives

Features

• Power MOS 7

®

MOSFETs

- Low R

DSon

- Low input and Miller capacitance

- Low gate c harge

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symmetrical design

- M5 power connectors

• High level of integration

Benefits

• Outsta ndi ng perfor mance at high freq ue nc y operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Low profile

• RoHS Compliant

Asymmetrical - bridge

MOSFET Power Module

APTM50DHM38G

APTM50DHM38G – Rev 3 July, 2006

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All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

GS

= 0V,V

DS

= 500V T

j

= 25°C 200

I

DSS

Zero Gate Voltage Drain Current

V

GS

= 0V,V

DS

= 400V T

j

= 125°C 1000

µA

R

DS(on)

Drain – Source on Resistance V

GS

= 10V, I

D

= 45A

38 45

mΩ

V

GS(th)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 5mA 3 5 V

I

GS S

Gate – Source Leakage Current V

GS

= ±30 V, V

DS

= 0V ±150 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

is s

Input Capacitance 11.2

C

oss

Output Capacitance 2.4

C

rss

Reverse Transfer Capacitance

V

GS

= 0V

V

DS

= 25V

f = 1MHz

0.18

nF

Q

g

Total gate Charge 246

Q

gs

Gate – Source Charge 66

Q

gd

Gate – Drain Charge

V

GS

= 10V

V

Bus

= 250V

I

D

= 90A

130

nC

T

d(on)

Tur n-o n Delay Ti me 18

T

r

Rise Time 35

T

d(off)

Turn-off Delay Time 87

T

f

Fall Time

Inductive switching @ 125°C

V

GS

= 15V

V

Bus

= 333V

I

D

= 90A

R

G

= 2Ω

77

ns

E

on

Turn-on Switching Energy 1510

E

off

Turn-off Switching Energy

Inductive switching @ 25°C

V

GS

= 15V, V

Bus

= 333V

I

D

= 90A,

R

G

= 2Ω 1452

µJ

E

on

Turn-on Switching Energy 2482

E

off

Turn-off Switching Energy

Inductive switching @ 125°C

V

GS

= 15V, V

Bus

= 333V

I

D

= 90A,

R

G

= 2Ω

1692

µJ

Diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage 600 V

T

j

= 25°C 250

I

RM

Maximum Reverse Leakage Current V

R

=600V

T

j

= 125°C 500

µA

I

F

DC Forward Current T

c

= 80°C 100 A

I

F

= 100A 1.6 1.8

I

F

= 200A 1.9 V

F

Diode Forward Voltage

I

F

= 100A T

j

= 125°C

1.4

V

T

j

= 25°C 180

t

rr

Reverse Recovery Time

T

j

= 125°C 220

ns

T

j

= 25°C 390

Q

rr

Reverse Recovery Charge

I

F

= 100A

V

R

= 400V

di/dt = 200A/µs

T

j

= 125°C 1450

nC

APTM50DHM38G

APTM50DHM38G – Rev 3 July, 2006

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Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

Transistor 0.18

R

thJC

Junction to Case Thermal Resistance

Diode 0.6

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V

T

J

Operating junction temperature range

-40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

To heatsink M6 3 5

Torque Mounting torque

For terminals M5 2 3.5

N.m

Wt Package Weight 280 g

SP6 Package outline (dimensions in mm)

See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com

APTM50DHM38G

APTM50DHM38G

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