APTM50DHM38G
APTM50DHM38G – Rev 3 July, 2006
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6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
20 40 60 80 100 120 140
I
D
, Drain Current (A)
t
d(o n)
and t
d(off)
(ns)
V
DS
=333V
R
G
=2Ω
T
J
=125°C
L=100µH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
20 40 60 80 100 120 140
I
D
, Drain Current (A)
t
r
and t
f
(ns)
V
DS
=333V
R
G
=2Ω
T
J
=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
20 30 40 50 60 70 80
I
D
, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
V
DS
=333V
D=50%
R
G
=2Ω
T
J
=125°C
T
=75°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
E
on
E
off
0
1
2
3
4
5
20 40 60 80 100 120 140
I
D
, Drain Current (A)
Switching Energy (mJ)
V
DS
=333V
R
G
=2Ω
T
J
=125°C
L=100µH
E
on
E
off
E
off
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
V
DS
=333V
I
D
=90A
T
J
=125°C
L=100µH
M icrosemi rese rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rmatio n co nta ined here in
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