10
Rev. 1.6
07/16/02
IRU3018
www.irf.com
Ref Desig Description Qty Part # Manuf
Q2 MOSFET 1 IRLR024, TO-252 package IR
Q3 MOSFET 1 IRL3103S, TO-263 package IR
Q4 MOSFET with Schottky 1 IRL3103D1S, TO-263 package IR
L1 Inductor 1 L=1mH, 5052 core with 4 turns of Micro Metal
1.0mm wire
L3 Inductor 1 L=2.7mH, 5052B core with 7 turns of Micro Metal
1.2mm wire
C1,17 Capacitor, Electrolytic 2 6MV1000GX, 1000uF, 6.3V Sanyo
C2 Capacitor, Electrolytic 1 10MV470GX, 470mF, 10V Sanyo
C3 Capacitor, Electrolytic 1 10MV1200GX, 1200mF, 10V Sanyo
C8 Capacitor, Ceramic 1 1mF, 0805
C9,15,19 Capacitor, Ceramic 3 1mF, 0603
C10 Capacitor, Ceramic 1 220pF, 0603
C11,12,20 Capacitor, Ceramic 3 See Table 2, dual layout component
0603 3 3
C13 Capacitor, Ceramic 1 1000pF, 0603
C14 Capacitor, Electrolytic 2 10MV1200GX, 1200mF, 10V Sanyo
C16 Capacitor, Electrolytic 6 6MV1500GX, 1500mF, 6.3V Sanyo
C18 Capacitor, Electrolytic 1 6MV150GX, 150mF, 6.3V Sanyo
R5 Resistor 1 19.1V, 1%, 0603
R6,7,8 Resistor 3 100V, 1%, 0603
R11 Resistor 1 0V, 0603
R12 Resistor 1 3.3KV, 5%, 0603
R13,14,15 Resistor 3 4.7V, 5%, 1206
R16,17,21 Resistor 3 2.2KV, 1%, 0603
R18 Resistor 1 See Table 2, dual layout component
0603 3 1
R19 Resistor 1 220KV, 1%, 0603
R22 Resistor 1 10V, 5%, 0603
IRU3018 APPLICATION PARTS LIST
Dual Layout with HIP6018
IRU3018
11
Rev. 1.6
07/16/02
www.irf.com
APPLICATION INFORMATION
An example of how to calculate the components for the
application circuit is given below.
Assuming, two set of output conditions that this regula-
tor must meet for Vcore:
The regulator design will be done such that it meets the
worst case requirement of each condition.
Output Capacitor Selection
The first step is to select the output capacitor. This is
done primarily by selecting the maximum ESR value
that meets the transient voltage budget of the total DVo
specification. Assuming that the regulators DC initial
accuracy plus the output ripple is 2% of the output volt-
age, then the maximum ESR of the output capacitor is
calculated as:
The Sanyo MVGX series is a good choice to achieve
both the price and performance goals. The 6MV1500GX,
1500mF, 6.3V has an ESR of less than 36mV typical.
Selecting 6 of these capacitors in parallel has an ESR
of 6mV which achieves our low ESR goal.
Other type of Electrolytic capacitors from other manu-
facturers to consider are the Panasonic FA series or the
Nichicon PL series.
Reducing the Output Capacitors Using Voltage Level
Shifting Technique
The trace resistance or an external resistor from the output
of the switching regulator to the Slot 1 can be used to
the circuit advantage and possibly reduce the number of
output capacitors, by level shifting the DC regulation point
when transitioning from light load to full load and vice
versa. To accomplish this, the output of the regulator is
typically set about half the DC drop that results from
light load to full load. For example, if the total resistance
from the output capacitors to the Slot 1 and back to the
Gnd pin of the IRU3018 is 5mV and if the total DI, the
change from light load to full load is 14A, then the output
voltage measured at the top of the resistor divider which
is also connected to the output capacitors in this case,
must be set at half of the 70mV or 35mV higher than the
DAC voltage setting. This intentional voltage level shift-
ing during the load transient eases the requirement for
the output capacitor ESR at the cost of load regulation.
One can show that the new ESR requirement eases up
by half the total trace resistance. For example, if the
ESR requirement of the output capacitors without volt-
age level shifting must be 7mV then after level shifting
the new ESR will only need to be 8.5mV if the trace
resistance is 5mV (7+5/2=9.5). However, one must be
careful that the combined “voltage level shifting” and the
transient response is still within the maximum tolerance
of the Intel specification. To insure this, the maximum
trace resistance must be less than:
Where:
Rs = Total maximum trace resistance allowed
Vspec = Intel total voltage spec
Vo = Output voltage
DVo = Output ripple voltage
DI = load current step
For example, assuming:
Vspec = ±140mV = ±0.1V for 2V output
Vo = 2V
DVo = assume 10mV = 0.01V
DI = 14.2A
Then the Rs is calculated to be:
However, if a resistor of this value is used, the maximum
power dissipated in the trace (or if an external resistor is
being used) must also be considered. For example if
Rs=12.6mV, the power dissipated is:
This is a lot of power to be dissipated in a system. So, if
the Rs=5mV, then the power dissipated is about 1W
which is much more acceptable. If level shifting is not
implemented, then the maximum output capacitor ESR
was shown previously to be 7mV which translated to 6
of the 1500mF, 6MV1500GX type Sanyo capacitors. With
Rs=5mV, the maximum ESR becomes 9.5mV which is
equivalent to 4 caps. Another important consideration
is that if a trace is being used to implement the resistor,
the power dissipated by the trace increases the case
temperature of the output capacitors which could seri-
ously effect the life time of the output capacitors.
a) Vo=2.8V, Io=14.2A, DVo=185mV, DIo=14.2A
b) Vo=2V, Io=14.2A, DVo=140mV, DIo=14.2A
ESR [ = 7mV
100
14.2
Rs [ 23(0.140 - 0.0232 - 0.01) / 14.2 = 12.6mV
Io
2
3Rs = 14.2
2
312.6 = 2.54W
Rs [ 23(Vspec - 0.023Vo - DVo) / DI
12
Rev. 1.6
07/16/02
IRU3018
www.irf.com
L = ESR3C3(VIN(MIN) - Vo(MAX)) / ( 23DI )
L = 0.006390003(4.75 - 2.8) / (2314.2) = 3.7mH
T = 1 / 200000 = 5ms
Vsw = Vsync = 14.230.019 = 0.27V
D (2.8 + 0.27) / (5 - 0.27 + 0.27) = 0.61
TON = 0.6135 = 3.1ms
TOFF
= 5 - 3.1 = 1.9ms
DIr = (2.8 + 0.27)31.9 / 3 = 1.94A
DVo = 1.9430.006 = 0.011V = 11mV
T Switching Period
D Duty Cycle
Vsw High-side MOSFET ON Voltage
RDS MOSFET On-resistance
Vsync Synchronous MOSFET ON Voltage
DIr Inductor Ripple Current
DVo Output Ripple Voltage
T = 1 / Fsw
Vsw = Vsync = Io3RDS
D (Vo + Vsync) / (VIN - Vsw + Vsync)
TON = D3T
TOFF = T - TON
DIr = (Vo + Vsync)3TOFF / L
DVo = DIr3ESR
DMIN (2 + 0.27) / (5.25 - 0.27 + 0.27) = 0.43
PDS = (1-DMIN)3Io
2
3RDS(MAX)
PDS = (1 - 0.43)314.2
2
30.029 = 3.33 W
DMAX (2.8 + 0.27) / (4.75 - 0.27 + 0.27) = 0.65
PDH = DMAX3Io
2
3RDS(MAX)
PDH = 0.65314.2
2
30.029 = 3.8W
RDS(MAX) = Maximum RDS(ON) of the MOSFET at 1258C
Ts = TJ - PD3(uJC + ucs)
Ts = 125 - 3.823(1.8 + 0.05) = 1188C
uSA = DT / PD = 83 / 3.82 = 228C/W
Output Inductor Selection
The output inductance must be selected such that un-
der low line and the maximum output voltage condition,
the inductor current slope times the output capacitor
ESR is ramping up faster than the capacitor voltage is
drooping during a load current step.
However, if the inductor is too small, the output ripple
current and ripple voltage become too large. One solu-
tion to bring the ripple current down is to increase the
switching frequency, however that will be at the cost of
reduced efficiency and higher system cost. The follow-
ing set of formulas are derived to achieve the optimum
performance without many design iterations.
The maximum output inductance is calculated using the
following equation:
Where:
VIN(MIN) = Minimum input voltage
For Vo=2.8V, DI=14.2A:
Assuming that the programmed switching frequency is
set at 200KHz, an inductor is designed using the
Micrometals’ Powder Iron core material. The summary
of the design is outlined below:
The selected core material is Powder Iron, the selected
core is T50-52D from Micro Metal wound with 8 turns of
#16 AWG wire, resulting in 3mH inductance with 3mV
of DC resistance.
Assuming L=3mH and Fsw=200KHz (switching fre-
quency), the inductor ripple current and the output ripple
voltage is calculated using the following set of equations:
In our example for Vo=2.8V and 14.2 A load, assuming
IRL3103 MOSFET for both switches with maximum on
resistance of 19mV, we have:
Power Component Selection
Assuming IRL3103 MOSFETs as power components,
we will calculate the maximum power dissipation as fol-
lows:
For high-side switch the maximum power dissipation
happens at maximum Vo and maximum duty cycle.
For synch MOSFET, maximum power dissipation hap-
pens at minimum Vo and minimum duty cycle.
Heat Sink Selection
Selection of the heat sink is based on the maximum
allowable junction temperature of the MOSFETS. Since
we previously selected the maximum RDS(ON) at 1258C,
then we must keep the junction below this temperature.
Selecting TO-220 package gives uJC=1.88C/W (from the
venders’ data sheet) and assuming that the selected
heat sink is black anodized, the heat-sink-to-case ther-
mal resistance is: ucs=0.058C/W, the maximum heat
sink temperature is then calculated as:
With the maximum heat sink temperature calculated in
the previous step, the heat-sink-to-air thermal resistance
(uSA) is calculated as follows:
Assuming TA = 358C:
DT = Ts - TA = 118 - 35 = 838C
Temperature Rise Above Ambient

IRU3018CW

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC REG CTRLR INTEL 3OUT 24SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet