VUB135-22NO1 Datasheet VUB135-22NO1 | P1-P3

VUB135-22NO1

preliminary

3~ Rectifier Bridge + Brake Unit + NTC

Standard Rectifier Module

NTC

19+20

1

10+11

~6+7

~4+5

~2+3

8+9 18 17 21+22

12 13

Part number

VUB135-22NO1

Backside: isolated

Features / Advantages: Applications: Package:

● Package with DCB ceramic

● Improved temperature and power cycling

● Planar passivated chips

● Very low forward voltage drop

● Very low leakage current

● NTC

● 3~ Rectifier with brake unit

for drive inverters

E2-Pack

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Height: 17 mm

● Base plate: Copper

internally DCB isolated

● Advanced power cycling

● Isolation Voltage: V~

3600

RRM

2200

I150

FSM

1100

DAV

V

=

V

A

=

I

3~

Rectifier

CES

1700

Brake

Chopper

I113

CE(sat)

1.9

C25

V

=

V

A

V

=

V

IXYS reserves the right to change limits, conditions and dimensions.

20130513cData according to IEC 60747and per semiconductor unless otherwise specified

VUB135-22NO1

preliminary

V = V

kA²s

Symbol Definition

Ratings

typ. max.

I

R

V

I

A

V

F

1.20

R 0.5 K/W

R

min.

150

V

RSM

V

100T = 25°C

VJ

T = °C

VJ

mA2V = V

R

T = 25°C

VJ

I = A

F

V

T = °C

C

105

P

tot

250 WT = 25°C

C

R K/W0.1

50

2200

max. non-repetitive reverse blocking voltage

reverse current

forward voltage drop

total power dissipation

Conditions

Unit

1.68

T = 25°C

VJ

150

V

F0

V0.79T = °C

VJ

150

r

F

6.4

mΩ

V1.13T = °C

VJ

I = A

F

V

50

1.74

I = A

F

150

I = A

F

150

threshold voltage

slope resistance

for power loss calculation only

µA

125

V

RRM

V2200

max. repetitive reverse blocking voltage

T = 25°C

VJ

C

J

37

j

unction capacitance

V = V;400 T = 25°Cf = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine T = 45°C

VJ

max. forward surge current

T = °C

VJ

150

I²t T = 45°C

value for fusing

T = °C150

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

T = °C

VJ

150

1.10

1.19

4.37

4.25

kA

A

kA

935

1.01

6.05

5.89

2200

DAV

d =rectangular ⅓

bridge output current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Rectifier

2300

IXYS reserves the right to change limits, conditions and dimensions.

20130513cData according to IEC 60747and per semiconductor unless otherwise specified

VUB135-22NO1

preliminary

T = 125°C

V

CES

V1700

collector emitter voltage

collector emitter saturation voltage

T = 25°C

collector current

A

113

A

C

VJ

Symbol Definition

Ratings

typ. max.min.Conditions

Unit

80

V

CE(sat)

total power dissipation

445

W

collector emitter leakage current

6.4

V

turn-on delay time

220

ns

t

reverse bias safe operating area

A

V

GES

V±20

V

GEM

max. transient gate emitter voltage

T = °C

C

V

P

tot

gate emitter threshold voltage

RBSOA

150

±30

T = 125°C

VJ

V

max. DC gate voltage

I

C25

I

C

T = 25°C

VJ

I = A; V = 15 V

CGE

T = 25°C

VJ

V

GE(th)

I

CES

I = mA; V = V

CGECE

V = V ; V = 0 V

CE CES GE

I

GES

T = 25°C

VJ

gate emitter leakage current

V = ±20 V

GE

2.13

2.8

5.85.2

mA

0.6

mA

0.6

400

G(on)

total gate charge

V = V; V = 15 V; I = A

CE

Q

GE C

tbd

nC

t

E

d(on)

r

d(off)

f

on

off

100

ns

880

ns

200

ns

30

mJ

25

mJ

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V = V; I = A

V = ±15 V; R = Ω

CE

C

GE G

V = ±15 V; R = Ω

GE G

V = V

CEK

1700

short circuit safe operating area

µs

SCSOA

10T = 125°C

VJ

V = V; V = ±15 V

CE GE

short circuit duration

t

short circuit current

I

SC

R = Ω; non-repetitive

G

tbd

A

R

thJC

thermal resistance junction to case

0.10

K/W

V

RRM

V1700

max. repetitive reverse voltage

T = 25°C

VJ

T = 25°C

forward current

A

tbd

A

C

33

T = °C

C

I

F25

I

F

T = 25°C

forward voltage

V

3.05

V

VJ

3.11T = 125°C

VJ

V

F

I = A

F

T = 25°C

reverse current

mA

0.1

mA

VJ

6T = 125°C

VJ

I

R R RRM

T = 125°C

VJ

Q

I

t

rr

RM

rr

tbd

µC

40

A

tbd

ns

reverse recovery charge

max. reverse recovery current

reverse recovery time

V =

-di /dt = A/µs

I = A

F

R

thJC

thermal resistance junction to case

0.65

K/W

V = V

T = 25°C

C

T = 25°C

VJ

T = 125°C

VJ

75

3

75

60

18

900

400

900

I

CM

1.9

R

thCH

thermal resistance case to heatsink

0.28

K/W

0.25R

thCH

thermal resistance case to heatsink

K/W

Brake IGBT

Brake Diode

900 V

80

nA

IXYS reserves the right to change limits, conditions and dimensions.

20130513cData according to IEC 60747and per semiconductor unless otherwise specified

VUB135-22NO1

VUB135-22NO1

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