VUB135-22NO1 Datasheet VUB135-22NO1 | P4-P6

VUB135-22NO1

preliminary

Ratings

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Logo UL Part number Date Code

2D Data Matrix

Location

Package

T

VJ

°C

M

D

Nm6

mounting torque

3

T

stg

°C125

storage temperature

-40

Weight g176

Symbol Definition typ. max.min.Conditions

virtual junction temperature

Unit

V V

t = 1 second

V

t = 1 minute

isolation voltage

mm

6.0

12.0

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

200 A

per terminal

150-40

terminal to terminal

E2-Pack

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

0 25 50 75 100 125 150

10

2

10

3

10

4

10

5

R

[

]

Typ. NTC resistance vs. temperature

T

C

[°C]

50/60 Hz, RMS; I ≤ 1 mA

ISOL

VUB135-22NO1 503948Box 6VUB135-22NO1Standard

3000

3600

ISOL

threshold voltage

V0.79

mΩ

V

0 max

R

0 max

slope resistance *

3.3

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Rectifier

150 °C

* on die level

T = 25°

resistance

kΩ

5.25

K

VJ

3375

R

25

B

25/50

5

4.75

temperature coefficient

Symbol Definition typ.

max.min.Conditions Unit

Temperature Sensor NTC

IXYS reserves the right to change limits, conditions and dimensions.

20130513cData according to IEC 60747and per semiconductor unless otherwise specified

VUB135-22NO1

preliminary

Dimmensions w/o tolerances

acc. DIN ISO 2768-T1-m

NTC

19+20

1

10+11

~6+7

~4+5

~2+3

8+9 18 17 21+22

12 13

Outlines E2-Pack

IXYS reserves the right to change limits, conditions and dimensions.

20130513cData according to IEC 60747and per semiconductor unless otherwise specified

VUB135-22NO1

preliminary

0.001 0.01 0.1 1

400

500

600

700

800

900

23456789011

10

3

10

4

0 10203040506070

0

20

40

60

80

0 20406080100120140160

1 10 100 1000 10000

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0 25 50 75 100 125 150

0

20

40

60

80

100

120

140

50Hz, 80% V

RRM

0.0 0.5 1.0 1.5 2.0

0

50

100

150

200

T

VJ

=45°C

T

VJ

=150°C

T

VJ

=45°C

T

VJ

=150°C

T

VJ

=125°C

T

VJ

= 25°C

I

2

t

[A

2

s]

I

FSM

[A]

t[s]

I

F

[A]

V

F

[V] t[ms]

P

tot

[W]

I

dAVM

T]A[

amb

[°C]

I

dAV

[A]

T

C

[°C]

t[s]

Z

thJC

[K/W]

R

thA

:

0.1 K/W

0.3 K/W

0.6 K/W

1.0 K/W

1.5 K/W

2.5 K/W

DC =

1

0.5

0.4

0.33

0.17

0.08

Fig. 1 Forward current vs.

voltage drop per diode

Fig. 2 Surge overload current

vs. time per diode

Fig. 3 I

2

t vs. time per diode

Fig. 4 Power dissipation vs. forward current

and ambient temperature per diode

Fig. 5 Max. forward current vs.

case temperature per diode

Fig. 6 Transient thermal impedance junction to case vs. time per diode

DC =

1

0.5

0.4

0.33

0.17

0.08

Constants for Z

thJC

calculation:

iR

th

(K/W) t

i

(s)

1 0.040 0.004

2 0.003 0.010

3 0.140 0.030

4 0.120 0.300

5 0.197 0.080

Rectifier

IXYS reserves the right to change limits, conditions and dimensions.

20130513cData according to IEC 60747and per semiconductor unless otherwise specified

VUB135-22NO1

VUB135-22NO1

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