APT75GP120J Datasheet APT75GP120J | P1-P3

050-7422 Rev B 5-2003

APT75GP120J

1200V

The POWER MOS 7

®

IGBT is a new generation of high voltage power IGBTs.

Using Punch Through Technology this IGBT is ideal for many high frequency,

high voltage switching applications and has been optimized for high frequency

switchmode power supplies.

• Low Conduction Loss • 50 kHz operation @ 800V, 20A

• Low Gate Charge • 20 kHz operation @ 800V, 44A

• Ultrafast Tail Current shutoff • RBSOA rated

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise specified.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

STATIC ELECTRICAL CHARACTERISTICS

MIN TYP MAX

1200

3 4.5 6

3.3 3.9

3.0

1000

5000

±100

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

GE

= 0V, I

C

= 1000µA)

Gate Threshold Voltage (V

CE

= V

GE

, I

C

= 2.5mA, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 75A, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 75A, T

j

= 125°C)

Collector Cut-off Current (V

CE

= 1200V, V

GE

= 0V, T

j

= 25°C)

2

Collector Cut-off Current (V

CE

= 1200V, V

GE

= 0V, T

j

= 125°C)

2

Gate-Emitter Leakage Current (V

GE

= ±20V)

Symbol

BV

CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

UNIT

Volts

µA

nA

Symbol

V

CES

V

GE

V

GEM

I

C1

I

C2

I

CM

RBSOA

P

D

T

J

,T

STG

T

L

APT75GP120J

1200

±20

±30

128

57

300

300A @ 960V

543

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Gate-Emitter Voltage Transient

Continuous Collector Current @ T

C

= 25°C

Continuous Collector Current @ T

C

= 110°C

Pulsed Collector Current

1

@ T

C

= 25°C

Reverse Bias Safe Operating Area @ T

J

= 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

POWER MOS 7

®

IGBT

G

C

E

SOT-227

G

E

C

ISOTOP

®

"UL Recognized"

050-7422 Rev B 5-2003

APT75GP120J

DYNAMIC CHARACTERISTICS

Symbol

C

ies

C

oes

C

res

V

GEP

Q

g

Q

ge

Q

gc

RBSOA

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

Test Conditions

Capacitance

V

GE

= 0V, V

CE

= 25V

f = 1 MHz

Gate Charge

V

GE

= 15V

V

CE

= 600V

I

C

= 75A

T

J

= 150°C, R

G

= 5Ω, V

GE

=

15V, L = 100µH,V

CE

= 960V

Inductive Switching (25°C)

V

CC

= 600V

V

GE

= 15V

I

C

= 75A

R

G

= 5Ω

T

J

= +25°C

Inductive Switching (125°C)

V

CC

= 600V

V

GE

= 15V

I

C

= 75A

R

G

= 5Ω

T

J

= +125°C

MIN TYP MAX

7035

460

80

7.5

320

50

140

300

20

40

163

56

1620

4100

2500

20

40

244

115

1620

5850

4820

UNIT

pF

V

nC

A

ns

µJ

ns

µJ

UNIT

°C/W

gm

MIN TYP MAX

.23

N/A

29.2

Characteristic

Junction to Case (IGBT)

Junction to Case (DIODE)

Package Weight

Symbol

R

ΘJC

R

ΘJC

W

T

THERMAL AND MECHANICAL CHARACTERISTICS

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, I

ces

includes both IGBT and FRED leakages

3 See MIL-STD-750 Method 3471.

4E

on1

is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current

adding to the IGBT turn-on loss. (See Figure 24.)

5E

on2

is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. A Combi device is used for the clamping diode as shown in the E

on2

test circuit. (See Figures 21, 22.)

6E

off

is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Total Gate Charge

3

Gate-Emitter Charge

Gate-Collector ("Miller") Charge

Reverse Bias Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy

4

Turn-on Switching Energy (Diode)

5

Turn-off Switching Energy

6

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy

4

Turn-on Switching Energy (Diode)

5

Turn-off Switching Energy

6

050-7422 Rev B 5-2003

TYPICAL PERFORMANCE CURVES

APT75GP120J

V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V) V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(V

GE

= 15V) FIGURE 2, Output Characteristics (V

GE

= 10V)

V

GE

, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)

FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge

V

GE

, GATE-TO-EMITTER VOLTAGE (V) T

J

, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature

BV

CES

, COLLECTOR-TO-EMITTER BREAKDOWN V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V) I

C

, COLLECTOR CURRENT (A) I

C

, COLLECTOR CURRENT (A)

VOLTAGE (NORMALIZED)

I

C,

DC COLLECTOR CURRENT(A) V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V) V

GE

, GATE-TO-EMITTER VOLTAGE (V) I

C

, COLLECTOR CURRENT (A)

012345 012345

0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350

6 8 10 12 14 16 0 25 50 75 100 125

-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150

T

J

= 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

T

C

=125°C

T

C

=25°C

V

GE

= 10V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

V

GE

= 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

V

GE

= 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

I

C

= 75A

T

J

= 25°C

T

J

= 25°C

T

J

= -55°C

T

J

= 125°C

T

C

=25°C

T

C

=125°C

250µs PULSE TEST

<0.5 % DUTY CYCLE

I

C

= 37.5A

I

C

= 75A

I

C

= 150A

I

C

= 150A

I

C

= 37.5A

160

140

120

100

80

60

40

20

0

250

200

150

100

50

0

5

4

3

2

1

0

1.2

1.15

1.10

1.05

1.0

0.95

0.9

0.85

0.8

160

140

120

100

80

60

40

20

0

16

14

12

10

8

6

4

2

0

5

4

3

2.0

1.0

0

180

160

140

120

100

80

60

40

20

0

I

C

= 75A

V

CE

=960V

V

CE

=600V

V

CE

=240V

APT75GP120J

APT75GP120J

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