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APT75GP120J

P1-P3P4-P6
050-7422 Rev B 5-2003
APT75GP120J
T
J
= 125°C, V
GE
= 10V
or 15V
T
J
= 25°C, V
GE
= 10V
or 15V
V
CE
= 600V
R
G
= 5Ω
L = 100 µH
V
GE
=10V,T
J
=125°C
V
GE
= 15V
V
GE
= 10V
V
GE
=15V,T
J
=125°C
V
GE
=10V,T
J
=25°C
V
GE
=15V,T
J
=25°C
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A) I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS) T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
T
J
= 25 or 125°C,V
GE
= 15V
T
J
= 25 or 125°C,V
GE
= 10V
SWITCHING ENERGY LOSSES (µJ) E
ON2
, TURN ON ENERGY LOSS (µJ) t
r,
RISE TIME (ns) t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) E
OFF
, TURN OFF ENERGY LOSS (µJ) t
f,
FALL TIME (ns) t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
10 40 70 100 130 160 10 40 70 100 130 160
10 40 70 100 130 160 0 20 40 60 80 100 120 140 160
0 10 20 30 40 50 0 25 50 75 100 125
40
30
20
10
0
120
100
80
60
40
20
0
14000
12000
10000
8000
6000
4000
2000
0
20000
15000
10000
5000
350
300
250
200
150
100
50
0
160
140
120
100
80
60
40
20
0
12000
10000
8000
6000
4000
2000
0
15000
12500
10000
7500
5000
2500
0
V
CE
= 600V
T
J
= 25°C or 125°C
R
G
= 5Ω
L = 100 µH
R
G
=5Ω, L = 100µH, V
CE
= 600V
R
G
=5Ω, L = 100µH, V
CE
= 600V
T
J
=125°C, V
GE
=15V
T
J
=125°C,V
GE
=10V
T
J
= 25°C, V
GE
=10V
T
J
= 25°C, V
GE
=15V
E
off
150A
E
on2
150A
E
on2
37.5A
E
off
75A
E
on2
75A
E
off
37.5A
E
on2
37.5A
E
off
75A
E
on2
75A
E
on2
150A
E
off
150A
E
off
37.5A
V
CE
= 600V
L = 100 µH
R
G
= 5 Ω
V
CE
= 600V
V
GE
= +15V
T
J
= 125°C
V
CE
= 600V
V
GE
= +15V
R
G
= 5 Ω
T
J
= 25°C, V
GE
= 10V
or 15V
T
J
= 125°C, V
GE
= 10V
or 15V
V
CE
= 600V
L = 100 µH
R
G
= 5 Ω
050-7422 Rev B 5-2003
TYPICAL PERFORMANCE CURVES
APT75GP120J
20 35 50 65 80 95 110
50
10
1
0.25
0.20
0.15
0.10
0.05
0
Note:
Duty Factor D =
t
1
/
t
2
Peak T
J
= P
DM
x Z
θJC
+ T
C
t
1
t
2
P
DM
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
20,000
10,000
1,000
500
100
50
10
350
300
250
200
150
100
50
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
F
MAX
, OPERATING FREQUENCY (kHz)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18, Minimim Switching Safe Operating Area
0 10 20 30 40 50 0 100 200 300 400 500 600 700 800 900 1000
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
T
J
= 125°C
T
C
= 75°C
D = 50 %
V
CE
= 800V
R
G
= 5 Ω
C
ies
C
oes
max max1 max 2
max1
d(on) r d(off ) f
diss cond
max2
on2 off
JC
diss
JC
Fmin(f,f)
0.05
f
tttt
PP
f
EE
TT
P
R
θ
=
=
++ +
−
=
+
−
=
C
res
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.0221
0.0498
0.158
0.00140F
0.0416F
0.543F
Power
(watts)
Junction
temp (°C)
RC MODEL
Case temperature (°C)
050-7422 Rev B 5-2003
APT75GP120J
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter Collector
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
SOT-227 (ISOTOP
®
) Package Outline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T.
DRIVER*
V
CE
Figure 24, E
ON1
Test Circuit
I
C
A
D.U.T.
APT60DF120
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
Collector Current
0
Collector Voltage
Gate Voltage
Switching
Energy
10%
90%
t
f
T
J
= 125 C
90%
t
d(off)
P1-P3P4-P6

APT75GP120J

Mfr. #:
Buy APT75GP120J
Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules FG, IGBT, 1200V, 75A, SOT-227
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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